SI2305

VDS=-20VRDS(ON),Vgs@-4.5V,Ids@-2.8AΩFeaturesAdvancedtrenchprocesstechnologyHighDensityCellDesignForUltraLowOn-ResistancePackageDimensionsMaximumRatingsandThermalCharacteristics(TA=25oCunlessotherwisenoted)130mΩ190mParameterSymbolLimitUnitDrain-SourceVoltageVDS-20Gate-SourceVoltageVGS±8VContinuousDrainCurrentID-2.2PulsedDrainCurrent1)IDM-8ATA=25oMaximumPowerDissipationTA=75oCPD0.8WOperatingJunctionandStorageTemperatureRangeTJ,Tstg-55to150oCJunction-to-AmbientThermalResistance(PCBmounted)3)166oC/W1.252)Junction-to-AmbientThermalResistance(PCBmounted)2)100RRthJANotesPulsewidthlimitedbymaximumjunctiontemperature.SurfaceMountedonFR4Board,t5sec.SurfaceMountedonFR4Board.1)3)2)RDS(ON),Vgs@-2.5V,Ids@-2.0A-20VP-ChannelEnhancementModeMOSFETSI23051-2012-7-8-50300080MillimeterMillimeterREF.Min.Max.REF.Min.Max.A2.3.GB2.2.H0.901.1C1.201.40K0.100.20D0.300.50J0.35E00.10L0.92F0.450.55M0°10°DGSSOT-231.802.000.700.98ELECTRICALCHARACTERISTICSParameterTestConditionStaticDrain-SourceBreakdownVoltageBVDSSVGS=0V,ID=-250uA-20VDrain-SourceOn-StateResistanceRDS(on)VGS=-4.5V,ID=-2.8A105130VGS=-2.5V,ID=-2.0A145190mΩGateThresholdVoltageVGS(th)VDS=VGS,ID=-250uA-0.45VZeroGateVoltageDrainCurrent0VDS=-20V,VGS=0V-1GateBodyLeakageIGSSVGS=±8V,VDS=0V±100nAForwardTransconductancegfsVDS=-5V,ID=-2.8A6.5SDynamicTotalGateChargeQg5.810Gate-SourceChargeQgs0.85Gate-DrainChargeQgdVDS=-6V,ID-2.8AVGS=-4.5V1.7nCTurn-OnDelayTimetd(on)1325Turn-OnRiseTimetr3660Turn-OffDelayTimetd(off)4270Turn-OffFallTimetfVDD=-6V,RL=6ΩID-1.A,VGEN=-4.5VRG=63460nsInputCapacitanceCiss415OutputCapacitanceCoss223ReverseTransferCapacitanceCrssVDS=-6V,VGS=0Vf=1.0MHz87pFSource-DrainDiodeMax.DiodeForwardCurrentISDiodeForwardVoltageVSDIS=-1.6A,VGS=0V-1.2VPulsetest:pulsewidth=300us,dutycycle=2%IDSSDS=-20V,VGS=0VTJ=55oCV-10uAΩ-0.81)1)1)SymbolMin.Max.Typ.Unit-1.6ASI23052-2012-7-8-
On-Resistancevs.DrainCurrentOutputCharacteristicsTransferCharacteristicsVDS-Drain-to-SourceVoltage(V)-DrainCurrent(A)IDVGS-Gate-to-SourceVoltage(V)-DrainCurrent(A)ID024681001234502468100.00.51.01.52.02.53.0TC=-55
C125
C0,0.5,1V2.5VVGS=5,4.5,4,3.5,3V1.5V2V020040060080010000369120.60.81.01.21.41.61.8-50050100150012345024680.00.10.20.30.40.50.60246810GateCharge-Gate-to-SourceVoltage(V)Qg-TotalGateCharge(nC)VDS-Drain-to-SourceVoltage(V)C-Capacitance(pF)VGSCrssCossCissVDS=6VID=2.8A-On-Resistance(rDS(on)
)ID-DrainCurrent(A)CapacitanceOn-Resistancevs.JunctionTemperatureVGS=4.5VID=2.8ATJ-JunctionTemperature(
C)(Normalized)-On-Resistance(rDS(on)
)VGS=2.5VVGS=4.5V25
CSI23053-2012-7-8-0.010.101.0010.000.20.40.60.81.01.21.41.6Power(W)-0.2-0.10.00.10.20.30.4-500501001500.00.10.20.30.40.50.602468Source-DrainDiodeForwardVoltageOn-Resistancevs.Gate-to-SourceVoltageThresholdVoltageSinglePulsePowerNormalizedThermalTransientImpedance,Junction-to-AmbientSquareWavePulseDuration(sec)210.10.0110-410-310-210-11NormalizedEffectiveTransientThermalImpedance30-On-Resistance(rDS(on)
)VSD-Source-to-DrainVoltage(V)VGS-Gate-to-SourceVoltage(V)-SourceCurrent(A)ISTJ-Temperature(
C)Time(sec)Variance(V)VGS(th)0.20.10.050.02SinglePulseDutyCycle=0.5ID=2.8AID=250A10110TC=25
CSinglePulse1412840TJ=25
CTJ=150
C2610SI23054-2012-7-8-