PtSi红外焦平面阵列技术的发展概况

301Vol.30No.120002LAsER&INFRAREDFebruary!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!20001001-5078200001-0048-03Ptsi400060PtsiPtsiCCDTN362ACurrentstatusofptsiinfraredFocalplanearraystechnologyYANGYa-shengChongging0ptoelectronicsResearchInstituteChongging400060abstractThispaperintroducesthelatestprogressofPtsischottky-barrierinfraredfocalplanearraystechnologyandanalysestheproblemexistingintheresearchinChina.Atthesametimethefuturedevelopmentispointed.KeywordsPtsiinfraredfocalplanearraysCCD1Ptsi128128IRFPAIRFPAInsb~gCdTesi1!3Insb3m!5m~gCdTe3m!5m8m!14mIRFPAsi3m!5mPtsiIRFPA100104010404238m!14m1973RADCshepherdYangsBD5PtsiIRFPAVLsIPtsiVLsIPtsiPtsiIRFPADsRC~ughes646425625651251264048010401965CCD1999-08-021040IRFPA6!8~ughesIRFPAIRFPAIRFPACCDITCCDITCCDM0SCSDLACADSISBDMitsubishil993CSDl040l040IRFPA4l7!ml7!m~ughes256256PtSiIRFPAl986DSRC64l28l60244320244PtSiIRCCDMitsubishi5l25l2PtSiIRCSDPtSi300KNE!T0.lK8DSRCMitsubishiPtSiIRFPAPtSiPtSiPtSi25l2l024PtSiIRCCDl28l28256256256290PtSiIRCCDl28l282.lkm25625640km2562905l25l2PtSiIRCCDl999IRFPA36!m34!m40%2!mPtSiIRCCDlPtSiPtSiPtSiPtSia.PtSiPtSi-Sib.SBD30%c.PtSiPtSi2SBDPtSiFOwlerPtSil3PtSiPtSi-SiPtSiPtSiPtSi8nmPtPtSiPtSiPtSi4SBDBCCDp-Sil00#2030#cml4Si0SiX0yNzCCD5ITCCDITCCDCCDSBDITCCD21l94ITCCDITCCD16PtsiIRCCD11PtsiIRCCDeV0.220.21!0.22D!cm~z12W-11.210105.010104199.99599.999NE#TK0.10$0.10NE#TD!3IRCCDPtsiIRCCD1IRCCDCCDCCDCCDCCDCCD2D!CCDCCDsBDPtsiPtsiPtsi8nm3PtsiCCD1mIRCCD4in2mCCDPtsi2010IRCCDPtsiIRCCD12PtsiCCD341FlogalskiA.Newtrendsinsemiconductorinfrareddetectors.Opt.Eng.19943351395!1412.2FlanneryREMillerJE.statusofuncooledinfraredimagers.sPIE19921689379!395.3DobrzanskiLNossarzewska-OrlowskaENowakzetal.MicromachinedsiliconbolometersasdetectorsofsoftX-rayultravioletvisibleandinfraredradiation.sensorsandActuatorsA199760154159.4AklyamaAsasakiTsetoTetal.10401040infraredchargesweepdeviceimagerwithPtsischottky-barrierdetectors.Opt.Eng.19943316470.5shepherdFDYangAC.siliconschottkyretinasforinfraredimaging.IEDM1973310!313.6KosonockyWF.Infraredimagesensorwithschottky-barrierdetectors.sPIE198786990107.7KosonockyWF.Reviewofschottky-barrierimagertechnology.sPIE19901308226.8KosonockyWF.state-of-the-artinschottky-barrierIRimagesensors.sPIE19921685219.9KosonockyWFErkardt~GMerayGMetal.Advancesinplatinum-slicideschottky-barrierIRCCDimagesensors.sPIE19802256971.05PtSi红外焦平面阵列技术的发展概况作者：杨亚生，YANGYas-heng作者单位：重庆光电技术研究所,重庆,400060刊名：激光与红外英文刊名：LASER&INFRARED年，卷(期)：2000,30(1)被引用次数：3次参考文献(9条)1.ShepherdFD;YangACSiliconSchottkyretinasforinfraredimaging19732.AklyamaA;SasakiT;SetoT1040×1040infraredchargesweepdeviceimagerwithPtSiSchottky-barrierdetectors[外文期刊]1994(01)3.DobrzanskiL;Nossarzewska-OrlowskaE;NowakZMicromachinedsiliconbolometersasdetectorsofsoftX-ray,ultraviolet,visibleandinfraredradiation[外文期刊]1997(1/3)4.KosonockyWF;ErkardtHG;MerayGMAdvancesinplatinum-slicideSchottky-barrierIRCCDimagesensors19805.KosonockyWFState-of-the-artinSchottky-barrierIRimagesensors[外文期刊]19926.KosonockyWFReviewofSchottky-barrierimagertechnology19907.KosonockyWFInfraredimagesensorwithSchottky-barrierdetectors19878.FlanneryRE;MillerJEStatusofuncooledinfraredimagers19929.FlogalskiANewtrendsinsemiconductorinfrareddetectors[外文期刊]1994(05)本文读者也读过(9条)1.PtSiIRCCD器件用长焦距Si微透镜阵列的制作研究[期刊论文]-光子学报2001,30(1)2.刘爽红外焦平面阵列用超薄PtSi/P-Si结构的优化[学位论文]20023.何剑.邓光华.曹文达.周旭东.HEJian.DENGGuang-hua.CAOWen-da.ZHOUXu-dongPtSiIRCCD像机对红外太阳光谱的观测[期刊论文]-半导体光电2000,21(z1)4.熊平.周旭东.邓光华.李作金.王颖.李华高.袁礼华.蒋志伟512×512元PtSi肖特基势垒IRCCD图像传感器[期刊论文]-半导体光电2003,24(3)5.刘爽.宁永功.陈艾.刘俊刚.杨家德.李昆.LIUShuang.NINGYong-gong.CHENAi.LIUJun-gang.YANGJia-de.LIKunPtSi薄膜超薄化及连续性研究[期刊论文]-激光与红外2000,30(4)6.李美成.杨建平.王菁.陈学康.赵连城脉冲激光制备硅基超薄PtSi薄膜[期刊论文]-功能材料2001,32(3)7.刘爽.宁永功.陈艾.刘俊刚.杨家德.李昆纳米级PtSi/P-Si(100)薄膜形成工艺研究[期刊论文]-功能材料2001,32(4)8.殷景华.蔡伟.王明光.郑玉峰.李美成.王培林.赵连城磁控溅射纳米PtSi薄膜表面和界面特征[期刊论文]-半导体学报2003,24(z1)9.何苗.易新建.程祖海.刘鲁勤.王英瑞用于改善PtSi红外焦平面阵列器件响应特性的长焦距GaAs微透镜阵列器件的制作研究[期刊论文]-红外与毫米波学报2001,20(5)引证文献(3条)1.付朝雪.刘淑平SiGe/Si异质结的基本特性及其探测器的应用前景[期刊论文]-红外2010(11)2.陈文彬.刘继琨PtSi-SBD光腔结构的共振吸收模型[期刊论文]-半导体光电2005(z1)3.杨红卫.吴实硅基红外探测器的研究进展[期刊论文]-物理与工程2002(3)本文链接：