(书)开关电源设计(好书)

1,220V,50Hz25.1.112I(max)54.9V28A11058.8-52.55-45.787Imax61.2V52.75V45.9V1.1220V20%45-65Hz,220V,8A264V,18A501002.10.90,50,0.95IEC555-23176V,,10mS1.2,10.2(1),,.100,176V264V200mV.,10100,10,2mS.1V.,5mA.0.015.30,0.1,2mV.1.313A.1.1,,..1.11.,60,.(),(32A/55V),.1.4..()...10100,5..1.5,.0.5,100,250mV.1.61001.L()N()6kV.2.L,N2.5kV..3.100V(1112)(14,1516)-,(3,4,56)14.-25A,1,0.1.1.7.2,.,,.,.3055.50mm.40+85580,.-60m2000m;-60m10000m.4MTBF100000.EMC1.160Hz50Hz50Hz47Hz60Hz63Hz50Hz60Hz220V380V110V120V208V480V277V120V230V240V30%10%198V242V30%2,6000V1.222VkHzNiH200nH6V1H200kHz1I(A)2.000.00-2.0010.011.012.013.014.0(V)1.112VV-I31.33.3V30A/µs7A1µs20kHz1/20kHz50µs(7A/2)50µs=175µC3.3V66mV175µC/66mV=3mF3300µFESRESR66mV/7A9mESR100m11300µF(slewrate)2MHz100kHz1.3.2FETESRLC1.2LC410µ1.2LCµµ220V/380V300V/500V51mAmA1.230mAS1.350V,220V380VPFCDC/DC1.2DC(mA)AC(mA)50Hz10kHz5.23.5110.6128624196553774501610.575509060231594631.365V25V25V(IEC)55V24V24V50V(IEC)45V()1250V30V1:162.114()PWMgoodidea110/2.12.2BuckBoostBuck24V15VBuck24V8V80V(MILSTD704ABuckBuck8V15VBoost100101102103V2.1400V48VBuck2.32.3.1720%30%30%40%20%30%BfNAU∆=UNABfBUβαηmTBfP=(1)fBmBmu,iUcIcttnitrvtdvtdiT2.2Buck)](2)(2[1dvdiccrvriccsttIUttIUTP+++=)(2drccttfIU+=rvrirttt+=dvdidttt+=sccsftIUP=sccsftIUP5.0=80.5PWMIC0.850.05MOSFET250kHz4µs0.1MOSFET0.4µsMOSFET0.1µs0.1µsIC0.10.80.50.4510:1,1:102.41BuckBuck5V5V3.3VIC2.5EMI500VBuck,Boost2.6EMIEMIEMIEMIBuckBoostBoost2.7BJTMOSFETIGBT?BJTMOSFETIGBT1.5kV1kVmAAMOSFET1kV500V,AAIGBT500VkVAkA90%MOSFETMOSFETMOSFET380V1500VMOSFET1000VBJTIGBTIGBTMOSFET500VMOSFETkHzIGBT500VA30kHz20kHz100V9ab2.3.aIGBTMOSFETbBJTMOSFETIGBTBJTMOSFETBJTIGBT2.3(b)U(BR)CBO/70ABJT50V/60AMOSFET380V510V3kWMOSFETBJTMOSFETBJTBJTMOSFETBJTMOSFETm50kHzMOSFETIGBTMOSFETMOSFETIGBTPWMMOSFETIGBTIGBTIGBTIGBTMOSFETMOSFETMOSFETIGBTIGBTIGBT50kHz3kW2.8()ILminLDTUIoL2)1(min−≥TDTon/TTon2.9MOSFETICMOSFET+UU(a)(b)2.4(a)(b)MOSFETMOSFETMOSFET2.4b10MOSFET2.102.111.BuckBuck/Boost.2.53.1,4.5.EMIBuck6.BJT500VIGBTMOSFET7.88.9.2.12Buck2.5,Uin=15V44220F2.5Bucka.BuckBuck1.Buck2.Buck3.Buck5V3.3V4.BuckEMI11BuckNMOSFET5V,10V1V5VPMOSFETPMOSFETRDSN20VPMOSFETNMOSFETBuckNMOSFETUoUin2.6Buck15V2.7Buck2.612V6V90%MOSFET2.7ICMOSFET55550%4N48HCPL2601dV/dtb.2.82.9Ui+UiUoU02.8(Boost)2.9·BoostBuck/BoostBoost12Buck/Boost2.10,5V10A0.550W0.5014)20(212==rmsIA50W500W50W50W,3~4c.2.102.11Buck-BoostBuck2.52.10Buck/BoostUiUo2.11Buck/Boost13BuckBuckBoostBuck–BoostBuckBoostBuckBoostMOSFETPWMICICBuck-Boostd.(2.12)MppUUo2.12LmI2/2RC500WMOSFETMOSFETMOSFETe.2.132.1414IC2.1318050%2.14T1T2·2UiT1D1D2UiUi120V170V2170V340V500VRDson200V2.14D1T1UoUiT2D22.13T1UoUiT22.14Buck/Boostf.90PWMPWM15EMIEMI100W/in3,EMIUUo2.152.15MOSFETMOSFETLCMOSFET100F,50V500kHzmW632/500)50(1002=××=kHzVpFPPWMICICg.PFCC/DCBuck160V1.16Buck50V5V5VBuck()2.131/1020dBDBuck300V10:15V50%2.16Buck-PWM1611170.7W1W1W1W0.5W0.7W3.13.1.1PTCNTC3.13.1RT0.1~3W122M±253501350ppm/°CRJ0.1~3W15.1M±0.5525100ppm/°CRY0.25~10W0.1~150k±15100~300ppm/°CRX0.5~10W0.01~10k±11025~100ppm/°C060308051206110M±15100~200ppm/°CRX2~40W0.01~150k±11020~300ppm/°CRX10~1000W0.5~150k±11020~400ppm/°C0.25/4,14102.2M±15100~250ppm/°C0.125~0.250±156,8,101001M±20200ppm/°C1W1kW3.23.2PCB3.1.215.78k87.45101k10k103.351.11.21.31.41.51.6(1.7)1.82.22.42.73.33.63.94.34.75.15.66.26.8(7.5)8.29.15%3.31.21.21212011813.110k110M100M110M100M1M1M1M103.112309451012345100010.1,0.010.001.3.1.3100V500V3.1.41/4W1/2W1/4W70%1W0.5WRN55RN60501/2W1/4W1/4W1/4W0.25W270WW100mW100mW100ms100ms10P=(40V)2/10=160W200WDal3.4E=Pt=160W0.1s16J,E/R=16J/10=1.6J/2.46J/.1010.113.1.51kW300W150W3.1.6193.1.7100A100mV100mV50mV,75mV100mV/100A=1m2.5cm20nHf=1m/220nH8kHzPCBPCBPCBPCB0.4/35m)(5.0Ω=mdlRldPCB70m0.50.253.23.53.5ESRdV/dt3.2.1,(CD)(CA)mFV,100VµF(CC)pF1µFMLCESRµF20CL(CB)(CF)dv/dt(CZ)3.2.21.01.21.5.82.22.73.34.76.85.68.2122pF3.2.410%4080%3.53.7FGCDJKMZ±1±2±0.25pF±0.5pF±5±10±20+80–203.2.5ESR(ESR),120HztanCRESR100kHzESRESR25253ESR1ESR100kHz1A50mV1A(1/100kHz)=10CESRC=Q/U=10C/50mV=200F100F100FESR100m50mVESR50mV/1A50m100FESRESR3100F25ESR300m6650mV17mVUpp=[(502+172)]1/2=53mVESRESRESR(ESR)I2ESRC=50~85106(s)65106(s)ESR3.2.68521MTBFMeanTimebetweenFailures1000200050001101855mm,18353mm6162mmESRESRI2R,3.23.2.73.253.33.3.1Q3/41103.3.212V16A10AMOSFET3.3.3IFtrr=ta+tb(3.3)22trr3.3ta(3.4)tb50V50VMOSFETMOSFET1sMOSFETMOSFETIFtrrtIRtatb3.35~10s3.4GTR)+U-U-U+U3.4GTR(BJTMOSFETIGBT1.2~1.53.4.1BJTICMPCMIs/bU(BR)CEOSOABJTICMPCMU(BR)CEOBJT2BJT()BJT510101BEBEBE5~6V3.5Uce=UDb+UbeUDcUDbUbeUDc0.7VUce=0.7V,Db,1.4VDcIDb3.5U(BR)CEO=450V,50A50kHz233.4.2MOSFETMOS(MetalOxideSemiconductor)MOSFETMOSFETPNPNNNMOSFETNMOSFETMOSFETRon15VP=RonI2T2525007.1)(−×=TRTRMOSFETUgQgP=QgVf0.5MOSFETP=IpkUpktsfs/2UpkMOSFETIpktsfsMOSFETdUg/dtEMIMOSFETMOSFETMOSFETMOSFETMOSFETUT3.6Ugt3.6MOSFETMOSFETMOSFET100MHzEMI20V40V20VMOSFET10ns24MOSFET1MHzkHzMOSFETBJTMOSFETBJT3.63.6UMOSFETBJTTBJTPWMMOSFET(Tr1)MOSFETBJTURBJTBJTBJTTIcD1BJT1/n1/,n=1:10,BJT15BJTBJTMOSFETBJTBEBJTBJTTIcD2RD1UTr2MOSFETTr13.6MOSFETBJTMOSFETBJTU(BR)CER550V,23A60A/50VMOSFET70A/700V(U(BR)CER)BJT50kHzMOSFETIGBTBJTMOSFETMOSFETBJTIGBTMOSFETIGBTBJTIGBTBJTMOSFETBJTIGBT3