Lab-reliability-可靠性测试

1ReliabilityTest(可靠性測試)2KindsofReliabilityTest(可靠性測試的種類)1.PreconTest(PreconditioningTest)预处理测试2.ReliabilityTest可靠性测试1)T/CTest(TemperatureCyclingTest)温度周期测试2)T/STest(ThermalShockTest)热冲击测试(迅速冷热交替)3)HTST(HighTemperatureStorageTest)高温仓测试（可以置于空气或者氮气柜中）4)T&HTest(Temperature&HumidityTest)温度及湿度测试（水环境,腐蚀，电解质置换Au.A.基板铜层可能short,padAl腐蚀；b.第一bond点断开）5)PCT(PressureCookerTest)高压锅测试（饱和蒸汽，100%RH,主要用于QFP产品）6)HAST(HighlyAcceleratedStressTest)高加速应力测试（不饱和蒸汽，80%RH,主要用于BGA产品）Psi磅/平方英寸英制压力1Psi=6.89x10^3pa1Pa=10^5bar=145x10^6psi3I.PreconditioningTest(預處理測試)ToknowtheworkabilityofSemiconductordevicesaftersoldering.知道焊接后半导体元件的可使用性ItsimulatesdeliveryfromassemblyhousetocustomersplantandsolderingonPCB.模拟从封装厂到客户处的运输及在线路板上的焊接PurposeofPreconTest(預處理測試的目的)4ProcedureofPreconTest预处理的程序EXT.VisualINSP&O/STestSAMInspectionTEMPCycleTest(-65’C/150’C,5X)DryBake(125’C,24HRS)Temp&HumidityTest(Level1,2,3,4,5,6)VPSorIRReflow(260deg.C,3X)SimulateTempChangesduringTransportationtocustomer模拟在运输到客户处过程中的温度变化SimulateDryingProcessofsilicagelbydrypack模拟干燥剂烘干硅胶的过程SimulateMoistureAbsorptioninProductionline模拟在生产线的受潮情况SimulateSolderingProcess模拟焊接过程ElectricalTest电测试Non-DestructiveTestusingSAM使用SAM无损测试Decision决定EXT.VisualINSP&O/STestSAMInspectionElectricalTest电测试NDTusingSAMSAM无损探伤5MoistureSensitivityLevels水分灵敏度Level程度T&HCond.温/湿度情况(C/%RH)FloorLifeTimeafterUnpack开包后的滞留时间12345685/85,168HRS85/60,168HRS30/60,192HRS30/60,96HRS30/60,72HRS30/60,6HRSUnlimited无限1Year1年168HRS(1Week)1星期72HRS(3Days)3天48HRS(2Days)2天6HRS6小时J-STD-0207,MSLLevel可以自己做，比如MSLlevel3pass,Level2fail,那么此产品就做MSLLevel3合适.6DefectsafterPreconTest预处理后的故障1.PackageCrack封装面的开裂2.Delamination分层3.ElectricalOpen/Short开路/短路DELAMINATIONPKGCRACKPKGCRACKCHIPCRACK7DefectsafterPreconTest预处理后的失效DieTopDelamination芯片顶部的分层DieCrack芯片裂缝PackageCrack封装面裂缝8II.ReliabilityTest可靠性测试ToknowtheworkabilityofSemiconductordevicesafterBoardMountinginRealSituationswhichcanbeinducedbyactualusers知道在半导体元件固定到板后的可使用性及客户可能引起的真实情况PurposeofRel.Test可靠性测试的目的PreconTestRel.TestFlipChipPCB9ProcedureofReliabilityTest可靠性测试的程序T&H45eaHTS45eaT/C45eaT/S45ea(option)PCT45eaPRECONTEST预处理测试HAST45ea101.TemperatureCyclingtest温度周期测试PurposeofT/C温度周期变化测试的目的ToknowthedurabilityofSemiconductorpackageresistingexpansionandshrinkagebyhighandlowtemperature.知道半导体器件承受高/低温冲击下的膨胀和收缩能力11TemperatureCycleTest温度周期测试TestConditions测试条件1)Temp:+150/-65deg.C温度：+150/-65摄氏度2)Time:15min/zone时间:15分/区间3)Read-outPoint:1000cycle读取点：1000次循环Measurement测量Open/ShortTest开短路测试-65CAir150CAirT/CChamber温度周期变化测试箱12EffectsofT/CTest影响温度周期的因素EMCCuL/FCuL/FSILICONCHIPWIREEMCCuL/FCuL/FSILICONCHIPWIREExpansionShrinkage-65CAir150CAirT/CChamber13FailuresafterT/CTest温度周期测试后的失效1)OpenduetoBondLiftorBallNeckBrokenbythechipsurfaceDelamination芯片表面分层造成的结合翘起或瓶颈而导致的开路2)ShortduetoCrackedDie芯片裂缝造成的短路DELAMINATIONCHIPCRACK14OpenFailureafterT/CTest温度周期测试后的断路DieTopDelamination&BallNeckBroken芯片顶部的分层及焊球瓶颈处破裂DelaminationDelaminationBrokenNeck152.ThermalShockTest热冲击测试150CLiquid-65CLiquidTestConditions测试条件1)Temp:+150/-65deg.C温度：+150/-65摄氏度2)Time:5min/zone时间:15分/区间???3)Read-outPoint:1000cycle读取点：1000次循环Measurement测量Open/ShortTest开短路测试?163.HighTempStorageTest高温仓测试PurposeofHTST高温仓测试的目的ToknowthedurabilityofSemiconductorpackagewhenexposedunderthehightemperatureforlongtime.知道半导体器件长期暴露在高温下的能力17HighTemperatureStorageTest高温仓测试150CN2gasTestConditions测试条件1)Temp:150deg.C温度：150摄氏度2)Read-outPoint:1000HRS读取点：1000小时Measurement测量Open/ShortTest开短路测试18EffectofHTST影响高温仓测试的因素1)ThistestacceleratesadiffusionamongSemiconductormaterialsbyheatthenmakesOpenfailure.测试加速了半导体材料的温度导致的开路2)Crackcanbeoccurredbyheat.温度产生的裂缝19OpenFailureafterHTST高温仓测试后的开路KirkendallvoidEMCSidieAuAlAl向Au扩散的速度比Au向Al扩散的速度开，形成EMCVoid204.Temperature&Humidity(T&H)Test温度及湿度测试PurposeofT&HTest温度及湿度测试的目的ToknowthedurabilityofSemiconductorPKGunderthehightempandhumiditycondition知道半导体器件高温高湿下的能力21Temperature&HumidityTest温度及湿度测试TestConditions测试条件1)Temp:85deg.C温度：85摄氏度2)Humidity:85RH%湿度：85％3)Read-outPoint:1000HRS读取点：1000小时Measurement测量Open/ShortTest开短路测试T&HChamber温度湿度测试炉22EffectofT&HTest影响温度及湿度测试的因素1)AlbondingpadcorrosioncanbeoccurbythemoisturewhichwasabsorbedthroughEMCthanmakesOpenfailure由通过EMC吸收的水汽造成AL结合片腐蚀比开路造成的来的多1)ShortorLeakagecanbeoccurbyionwhichmovesthroughmoistureinsidepackage水离子在器件内部造成短路或者渗漏Moisture23FailureafterT&HTest温度及湿度测试后的失效LeakagebytheDendrite结晶造成的渗漏L/FL/FL/FL/FL/FEMCEMCEMCEMCL/FTape245.PressureCookerTest(PCT)高压锅测试PurposeofPCT高压锅测试的目的ToknowtheexistenceofgapbetweenEMC&L/F知道目前EMC和L/F之间的差别25PressureCookerTest高压锅测试PCTCHAMBER高压锅TestConditions测试条件1)Temp:121deg.C温度：121摄氏度2)Humidity:100RH%湿度：100％3)Pressure:2ATM压力：2ATM4)Read-outPoint:168HRS读取点：168小时Measurement测量Open/ShortTest开短路测试26AluminumbondingpadcorrosionfailurecanbeoccurbythemoisturewhichwaspenetratedthroughagapbetweenEMCandLeadFrame.穿过EMC和leadframe缝隙的水分可以造成铝的bondingpad腐蚀Thiscorrosioncanmakesopenfailure.腐蚀可能引起开路EffectofPressureCookerTest影响高压锅测试的因素MoistureDieAuWireEMCLeadFrame2ATM27PadCorrosionbyPCT高压锅测试造成的Pad腐蚀NOCORROSION无腐蚀CORROSION腐蚀286.HighlyAcceleratedStressTest(HAST)高压锅测试PurposeofHAST高压锅测试的目的ToknowtheexistenceofgapbetweenEMC&Substrate知道目前