90nmCMOSSRAM位单元工艺、版图设计及低功耗实现

90nmCMOSSRAM位单元工艺、版图设计及低功耗实现的研究作者：张颖学位授予单位：复旦大学参考文献(18条)1.KAUSHIKROY.SAIBALMUKHOPADHYAY.HAMIDMAHMOODI-MEIMANDLeakageCurrentMechanismsandLeakageReductionTechniquesinDeep-SubmicrometerCMOSCircuits2003(02)2.ChrisHyung-i1KimAforwardbody-biasedlow-leakagesramcachedevicecircuitandarchitectureconsiderations2005(03)3.BentoHCalhoun.AnanthaChadrakasanAnalyzingStaticNoiseMarginforSub-thresholdSRAMin65nmCMOS20054.KanakAgarwal.SaniNassifStatisticalanalysiSofsramcellstability5.RWMANNUltralow-powerSRAMtechnology2003(5-6)6.Static-NoiseMarginAnalysiSofMOSSRAMCellS1987(05)7.甘学温数字CMOSVLSl分析与设计基础8.集成电路器件电子学9.刘恩科半导体器件物理10.BTavell.MBidaudl.NEmonetD.Bargel,N.Planes,H.Brut,D.RoyThinoxynitridesolutionfordigitalandmixed-signal65nmCMOSplatform11.ShekharBorkarCircuitResearch12.SMSZEPhysicsofSemiconductorPhysics198313.AfshinAbdollahiLeakagecurrentreductioninCMOSVLSIcircuitsbyinputvectorcontrol2004(02)14.JHChenAnanalyticthree-three-terminalband-to-bandtunnelingmodelonGIDLinMOSFET200115.AfshinAbdollahiLeakagecurrentreductioninCMOSVLSIcircuitsbyinputvectorcontrol2004(02)16.BehnamAmelifard.FarzanFallah.MassoudPedramReducingthesub-thresholdandgate-tunnelingleakageofSRAMcellsusingdual-Vthanddual-ToxAssignment17.RXGu.MIElmasryPowerdissipationanalysisandoptimizationofdeepsub-micronCMOSdigitalcircuits1996(05)18.JamesKKaoSubthresholdleakagecontroltechniquesforlowpowerdigitalcircuits2001本文链接：授权使用：上海海事大学(wflshyxy)，授权号：256c5e62-615c-4ea3-bf88-9deb00b9e0e4下载时间：2010年9月8日