超深亚微米工艺下模拟IC仿真的MOSFET模型

!#$%&’&%()(*+$%&*,(*-&%)%./0!#$%&’’(200641,,,。。IC。,,,;,,:2005-10-12:863(2002AA141041)!#$%&’(,(,,100049):MOSFET、MOSFET,(BSIME./),,。,E./。:I0;MOSFET;BSIM;E./;;;:TN402:A:1671-4776(2006)04-0203-06MO#$%&M’()*+,-.’/0,1*’-23#+45*16+’,5,()/7*6/189)):#5;4+/’,&)=,’*’-+)DUANCheng-hua,LIUMei-lian(!#$%&,’()*+),-!./00102,/-$/34-5-6.)*-7802!.3-4.-5,,/-45,3,+,-02#1-.,(043.502’()*+),-!./00102,/-$/34-5-6.)*-7802!.3-4.-5,9-3:34;100049,$/34))0;6/16:AfterreviewingthecharacteristicsofMOSFET,themethodsanddevelopmentsofmo-deling,twopopularMOSFETmodels(BSIM3andEKV)inlow-poweranalogICdesignwereanalyzed.Comparisonsweremadebetweenthem,theiradvantagesanddisadvantagewereanalyzed.Thefinalresultsshowthatitisdifficultforobtainingamodelthataccuratelypredictstheoperationofhigh-performanceanalogsystemsandEKVmodelhastheadvantagesforanalogintegratedcircuitdesign.?)@A’/(:analogIC;MOSFETmodeling;BSIM3models;EKVmodels;inversioncoefficient;shortchanneleffects;moderateinversionregion!#$%&’%()!!)*&+$),)-.!!’$%/*0$’*.%-123+(,)-.20320064!#$%&’&%()(*+$%&*,(*-&%)%./0!#$%&’’(,。UDSM,、、、。0.1µm,。MOSFET、,MOSFETcompact。BSIM3EKV,。,EKV。2MOSFET、2.1!1NMOS1。MOSFET。:Qi(x)=-Cox[V=SV(x)-VT]。v?,,。µ?,I@AxBµ?CoxW[V=SV(x)-VT]AV(1),Cox;W;VT。NMOSI@Bk?CWL(V=S-VT)V@SV2@S2[]Bk?(V=S-VT)V@SV2@S2[](2),k?C,k?C=µ?Cox=µ?oxtox;k?,k?BWLk?C。2.2’()*!2MOS(U@SM),,、。MOSFDT,U@SM,@IBE()、SFBD()、G@()HM()。(1)@IBE:,I(),VDS。。,。,。,,。(2)SFBD:,J。IKLM。,。(3)G@:,,,?m,。,,,。(N)HM:MOSFET?m,,SiO21O2?m;,,P0QOP0RVIcm。,,、,,PNMOS!#$%&’%()!!)*&+$),)-.!!’$%/*0$’*.%-123+(,)-.204!#$%&’&%()(*+$%&*,(*-&%)%./0!#$%&’’(20064。2.3CMC()。UCBerkeleyBSIMBSIM3v3CMC。SPICE,D.PedersonR.Rohrer。MOSFETBSIM3,PhilipsMM11,SP2001EKV。2MOSFET[3],,。3,,。,()。compact:、。3.1Meyer[4],Meyer,,,Meyer。,SPICE2D.E.WardWard[5]。(Qinv)ID=WQinv(y)v(y)。WMOSFET,v(y)。,MOSFET;,;(,3);,,,;。,,BSIM3/4MM9。3.2,、,。BrewsN。,。,。,,。,2MOSFET3!#$%&’%()!!)*&+$),)-.!!’$%/*0$’*.%-123+(,)-.20520064!#$%&’&%()(*+$%&*,(*-&%)%./0!#$%&’’([3]。。,。,。MM11SP2001,UDSM。3.3EKV。。,BSIM。,。,。EKV。gm/IDgmID=1nV2304256I7!604#5(3),n;V23;I7,。,。8BSIM3EKV4.1BSIM3BSIM(9:;:=:?@A;BCD@EFF:=IGHE2mAI:=)U7B:;:=:BSIM,BSIM37M7。1JKLBSIM1,。BSIM1MMSHE2。1JJ0BSIM2BSIM1,(120)。1JJ5BSIM3。,BSIM3,。,BSIM3BSIM3N3。,。,。[O]V23=V2306K1!?6VSB!P2!?!$6K2·VSB6K116NQRL:SS!P%$1!?!PV23(8),V23,DIBQ、。IDS=IDS016RDSIDS0VDS:SS16VDSPVDS:SSVT$·16VDSPVDS:SSVTS7BE$(5),VTVDS=VD?EB:E;=,VTS7BE:E;=。4.2EKVEKVMMS。,,。EKVMMS,,。,。,。,。1JJLEKV2UO,2000,EKV3U0。。ID,IHIV。IS(VPPVS)(VPPVD)。,。,。,IHIVVPPVSVPPVDID=IHPIV(O)IS=2n#:SSVB2,(WI)(SI),!#$%&’%()!!)*&+$),)-.!!’$%/*0$’*.%-123+(,)-.206!#$%&’&%()(*+$%&*,(*-&%)%./0!#$%&’’(20064I!I[#$%&]。4.3,’([%%]。)*+,-./’0’(,1。.2345-./’060*+,789’(,。,-./’0,,,1(2)。,*+,,,’:.,1(3)。)’((*+,-./’0)1’([%7]。。。I(&:I(&;I![7nµC=(W/L)U?7],,I!;n;µ;WL;U?;C=。,I(&;I@[I:(W/L)]。,I(&;%。’:.7&,I(&;&8%I(&;%&。,%&,&8%,9。[%0]:*+,。-./’I(&&8&%,%,&8&%$%,)&A。,。*+,、-./’060(%)。(2)-./’0(3)*+,9!#$%&’%()!!)*&+$),)-.!!’$%/*0$’*.%-123+(,)-.20720064!#$%&’&%()(*+$%&*,(*-&%)%./0!#$%&’’(BSIM3v385EKV2.6271BSIM3+3,-.2/6,EKV,,BSIM3v3,;0.13µm,EKV,BSIM3v3[13];,BSIM3v3,,,BSIM3v3,EKV;EKVBSIM3v3。5MOSFETIC。,,。。IC。EKV、[4,14]。EKV,[5,15]。:[1]YEOKS,ROFAILSS,GOHWL.CMOS/BiCMOSULSI:LowVoltageLowPower[M].:,2003.101-125.[2]MULLERRS,KAMINSTI,CHANM.DeviceElectronicsforIntegratedCircuits,ThirdEdition[M].:,2004.100-200.[3]ANGELOVG,TAKOVT,RISTICS.MOSFETmodelsattheedgeof100nmsizes[A].2004.24thInternationalConferenceonMicroelectronics[C].SerbiaandMontenegro,2004.295-298.[4]BUCHERM,LALLEMENTC,KRUMMENACHERF,etal.AMOSTransistorModelforMixedAnalogDigitalICDesign[A].DesignofSystemonaChip.Devices&Components[M].KluwerAcademicPublishers,2004.47.[5]SALAZARFA,PIMENTELJCG,PACHECOMA,etal.MicropowerCMOSanalogcells[J].IntegratedCircuitDesign,1998,3(3):187-190.[6]LIUW,JINX,CHENJ,etal.BSIM3v3.2.2MOSFETModelUserosManual[M].UniversityofCalifornia,Berpeley,1999.2-11.[7]BUCHERM,KAZAZISD,KRUMMENACHERF,etal.AnalysisoftransconductancesatalllevelsofinversionindeepsubmicronCMOS[A].Proc9thIEEEConfonElectronics,CircuitsandSystems(ICECS2002)[C].Dubrovnip,Croatia,2002.1183-1186.[8]ENZCC,VITTOZEA.CMOSlowpoweranalogcircuitdesign[J].DesigningLowPowerDigitalSystems,EmergingTechnologies,1996,1(1):79-133.[9]ENZC,KRUMMENACHERF,VITTOZE.AnanalyticalMOStransistormodelvalidinallregionsofOperationanddedicatedtolowvoltageandlowcurrentapplications[J].JournalonAnalogIntegratedCircuitsandSignalProcessing,1995,8(1):83-114.[10]MACHADOqAS,ENZC,BUCHERM.EstimatingpeyparametersintheEKVMOSTmodelforanaloguedesignandsimulation[A].IEEESymposiumonCircuitsandSystemsIEEE[C].NewYorp,NY,USA,1995.1588-1591.[11]VIDALE,MARTrNEZH,PORTAS,etal.EKVbasednonlinearanalyticalmodelfortheMRCcircuit[J].AnalogIntegratedCircuitsandSignalProcessing,2002,31(1):69-72.[12]TERRYSC,ROCHELLEJM,BINKLEYDM,etal.ComparisonofaBSIM3v3andEKVMOSTmodelfora0.5µmCMOSprocessandimplicationsforanalogcircuitdesign[J].IEEE:NuclearScienceSymposiumConferenceRecord,2002,1(10):317-321.[13]BENDIXP.DetailedComparisonoftheSP2001,EKV,andBSIM3Models[A].TechnicalProceedingsofthe2002InternationalConferenceonModelingandSimulationofMicrosystems:Chapter13:CompactModeling[C].USA