TempressHDPOCl3设备资料

TempressHDPOCl3furnaceforthePVindustryIntroductionProductiondataBenchmarkingLPcomparisonUniformityConclusionsContentsTempressDiffusionKingstoneIonSolarTempressSPECTREPECVDSiNx,SiO2LPCVDPolyMultiCrystallineMonoCrystallinePOCl3HDPOCL3BBr3AnnealingOxidationR&Dsystemp-type/n-typeIBCTempresssolarproductrangep-type/n-typeTempressHD-POCl31000wfr/load,3200wfr/hrReliableatmosphericprocessLowmaintenancecostSpecialchemistryoptimizedhardwareStablehighOhmicprocessingupto140Ω/sqIntegratedfullautomation5-stacksystemplatformPlugandplaysolutionAtmosphericHighThroughputDiffusionPOCl3introductionPOCl3isasimpleandwellknownprocesswithexcellenttrackrecordinprocessperformance.ThePOCl3processisaveryimportantstepintheproductionprocessofthesolarcell;itcontrolstheformationoftheemitteranddefinestheinterfacewiththecontacts.Whilepushingtheboundariesincellefficiencies,increasinglymorestrictrequirementsaresetforthePOCl3process(notablyhigherRs,lowersurfaceconcentrations,betteruniformities).Ontheotherhand,theCpWisonatightcontrol,continuousimprovementsincostsreductionareneeded.Howcanwe,equipmentproviders,servebothrequirements?Howcanwe,equipmentproviders,servebothrequirements?POCl3introductionIncreasingthebatchloadofaPOCl3processtoreduceCpWseemsinevitable.However,howcanweincreasethebatchsizewhilemaintainingexcellentprocessresultsANDpreservingthesimpleessenceofthePOCl3process?OverthelastyearsTempresshasgainedenormousinsightinhowtosimultaneouslycontroldopantlevelanduniformityoftheemitterinourPOCl3process.Canwemakeituniformenoughtoallowthewaferstobepositionedathalfpitch?TempressLPPOCl3resultsTempresshasqualifiedandtestedLPPOCl3initsdemofacilitiesBenchmarkwithotherLPPOCl3equipmentthroughcustomerdemosrevealequivalentresultsVeryuniformemitterscanbeproduced,butattheexpenseofhighsurfaceconcentrationsBestcellsareproducedwithslightlymorerelaxeduniformityspecsWiWuniformity(1s):0,9/sqSimilarrelationbetweenuniformityandcellefficienciesareobservedinothersystems(literature)..LP-POCL3Centrotherm60Ohm/sqsheetresistanceGooduniformity(2%)ECVprofileflatfor50nm:indicationoflotsofinactivePMuelbaueretal,EUPVSEC2011DOI10.4229/26thEUPVSEC2011-2CV.2.17LP-POCL3Crampetteetal,EUPVSEC2013DOI10.4229/28thEUPVSEC2013-2DV.3.28SEMCO110Ohm/sqsheetresistanceGooduniformity(3,5%)Surfaceconcentrationabove1021InallcasesgooduniformityisachievedattheexpenseofemitterqualityTempressfindingsonLPPOCl3processTempressdevelopedanalternativeATMprocesscalledHighDensityPOCl3HD-POCL3benefitsfromthethroughputadvantageofhalfpitchBtB,butwithoutthedrawbacksofanLPsystemVerygooduniformitiesareachievableaftersignificanttuning,atatrade-offoncellefficiency.IntegrationofLPPOCl3processinthecelllineisnotstraightforward.ThinnerPSGbearsmoreriskonemitterdamageduringPSGremoval/single-side-etchCombinationofcorrosivegasses(POCl3)andthesealingrequiredforLPprocessinginhibitsprocessfluctuationsthatmaycauseyieldlossHardwareoftheLPPOCl3processismorecomplexandexpensiveLPprocessisaninherentlymoredangerousprocess,quartzerosionorquartzcracksmayleadtoimplosionofprocesstube.MorestrictpreventivemaintenanceismandatoryHDPOCl3TempresshasdevelopedHD-POCl3processforhigherthroughput,betteruniformityandhighersheetresistivityHDPOCl3leadstobetteruniformityandconsequentlypitchcanbereducedRshuniformityforLPprocesscomesattheexpenseoflowerefficiency,becauseofanoversaturatedemitterLowersurfaceconcentrationspossiblewithHDprocessFurthertheHDsystemislesscomplex,lowermaintenance,morestable,lessexpensivecomparedtoanLPsystemLPPOCl3HDPOCl31.PSGdeposition2.Phosphordrive-in3.PSGremovalGooduniformityHigh[P]surfaceconcentrationLowefficiency4.PSGdepositionusingHDspecialchemistry5.Phosphordrive-in6.HDeffect7.PSGremovalGooduniformityLow[P]surfaceconcentrationhighefficiencyLP-POCl3vs.HDPOCl3principleComparisonwithindustrialATMPOCl3processRsuniformityATMindustrialPOCl3(std)4.76mmpitchBtBATMHDprocess2.38mmpitchBtBATMindustrialPOCl32.38mmpitchBtBScalex2ExtendabilitytowardshighRsvaluesRsuniformityExcellentuniformityresultsobtainedat2.38mmpitch(halfpitchback-to-back)usingourATMHDprocess,evenatextremelyhighRsvaluesATMHDprocess@2.38mmpitchBtBPilotlineresultsPilotlineresultsachievedon1000waferquartzlongboatusingmanualloadingIn5processrunsweachievedsimilarefficiencyascustomerbaselineUocIscFFNHD-POCL0,61998,67678,6317,38Baseline0,61958,67478,7617,39Electricalresultsrun#5:-0.1-0.08-0.06-0.04-0.0200.020.040123456Efficiencydifferenceversusbaseline[%]Runnumber[#]HDPOCl3Productiondata5000waferspilotrunofindustrialHD-POCl3processat1000wafersperboatNoefficiencylossisobserveddespitethedoublewaferloadusingHD-POCl3Inmassproductionfor3monthsEfficiency-VocHD-POCl318.1%17.9%17.7%17.5%17.3%17.1%16.9%16.7%16.5%0.6050.6100.6150.6200.6250.6300.635CellefficiencyVocTempressisproudtobetheTUNE-IN@CUSTOMEROFHDPOCl3vsBKMATMPOCl3HDPOCl3processresultsSamecellefficienciesobtainedathalfpitchasstandardBKMprocess,onlyafter5tune-inrunsIttookQcells2yearstofindtherightbalancebetweenuniformityandefficiencyonLPPOCl3HDPOCl3benchmarkwi