高K栅介质材料的研究现状与前景

高K栅介质材料的研究现状与前景作者：余涛，吴雪梅，诸葛兰剑，葛水兵，YUTao，WUXuemei，ZHUGELanjian，GEShuibing作者单位：余涛,葛水兵,YUTao,GEShuibing(苏州大学物理系,苏州,215006;苏州大学江苏省薄膜材料重点实验室,苏州,215006)，吴雪梅,WUXuemei(苏州大学物理系,苏州,215006;苏州大学江苏省薄膜材料重点实验室,苏州,215006;中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海,200050)，诸葛兰剑,ZHUGELanjian(苏州大学分析测试中心,苏州,215006;苏州大学江苏省薄膜材料重点实验室,苏州,215006)刊名：材料导报英文刊名：MATERIALSREVIEW年，卷(期)：2010,24(21)参考文献(32条)1.施敏半导体器件物理与工艺20022.NeilH;WesteE;DavidHarrisCMOSVLSIdesign:Acir-cuitsandsystemsperspective20063.MartinMFrank;SangBumKimScalingtheMOSFETgatedielectric:Fromhigh-Ktohigher-K[外文期刊]20094.YoshinoriTsuchiya;MasahikoYoshikiInfluenceofNisilicidephasesoneffectiveworkfunctionmodulationwithAl-pileupintheNifullysilicidedgate/HfSiONsystem20095.LuXubing;KenjiMaruyamaCharacterizationofHf-TaOfilmsforgateoxideandmetal-ferroelectrie-insulator-silicondeviceapplications[外文期刊]20086.LeeJae-Woong;HamMoon-Ho;MyoungJae-MinGate-con-trolledtransportinGaNnanowiredeviceswithhigh-KSi3N4gatedielectrics20087.ByoungjunPark;KyoungahCho;SangsigKimElectricalch-aracteristicsofpolycrystallineSilayersembeddedintohigh-kAl2O3gatelayers[外文期刊]2008(23)8.GreenML;SchenckPKHigher-Kdielectricsforadvancedsiliconmicroelectroniedevices:Acombinatorialresearchstudy[外文期刊]20099.AtanassovaE;SpassovDInfluenceofthemetalelectrodeonthecharacteristicsofthermalTa2O5capacitors[外文期刊]2006(10)10.ZhuWJ;TamagaWaTEffectofAlinclusioninHfO2onthephysicalandelectricalpropertiesofthedielec-trics[外文期刊]200211.GoutamKumarDalapati;YiTong;Wei-YipLohE-lectricalandinterfacialcharacterizationofatomiclayerde-positedhigh-KgatedielectricsonGaAsforadvancedCMOSdevices200712.HiroakiArimura;NaomuKitanoExcellentelectricalpropertiesofTiO2/HfSiO/SiO2layeredhigher-Kgatedie-lectricswithsub-lnmequivalentoxidethickness[外文期刊]200813.FengLiping;LiuZhengtang;ShenYarningCompositional,structuralandelectroniccharacteristicsofHfO2andHfSiOdielectricspreparedbyradiofrequencymagnetronsputtering[外文期刊]2009(5)14.ZhaoC;WittersTPropertiesofALDHfTaxOyhigh-klayersdepositedonchemicalsiliconoxide[外文期刊]2007(1)15.YuXiongfei;ZhuChunxiangElectricalcharacteristicsandsuppressedboronpenetrationbehaviorofthermallysta-bleHfTaOgatedielectricswithpolycrystalline-silicongate200416.ZhangMH;RheeSJImprovedelectricalandmaterialcharacteristicsofHfTaOgatedielectricswithhighcrystalli-zationtemperature200517.YuXiongfei;ZhuChunxiangImprovementsonsurfacecarriermobilityandelectricalstabilityofMOSFETsusingHfTaOgatedielectric[外文期刊]2004(12)18.YuXiongfei;ZhuChunxiangMobilityenhancementinTaNmetal-gateMOSFETsusingtantalumincorporatedHfO2gatedielectric200419.ChoMH;ChungKBChangeinphaseseparationandelectronicstructureofnitridedHf-silicatefilmsasafunctionofcompositionandpost-nitridationanneal[外文期刊]200620.UedonoA;IkeuchiKImpactofnitridationonopenvolumesinHfSiOxstudiedusingmonoenergeticpositronbeams200621.XuGaobo;XuQiuxiaThermalstabilityofHfON,HfSiONandHITaONgatedielectrics200822.VellianitisG;RittersmaZMChargetrappinginnitri-dedHfSiOgatedielectriclayers[外文期刊]2006(9)23.KamadaH;TanirnuraTControlofoxidationandre-ductionreactionsatHfSiO/SiinterfacesthroughNexposureorincorporation[外文期刊]200824.SatoshiToyoda;JunOkabayashiNitrogendopingandthermalstabilityinHfSiOxNystudiedbyphotoemissionandX-rayabsorptionspectroscopy200525.UedonoA;IkeuchiKCharacterizationofHfSiONgatedielectricsusingmonoenergeticpositronbeams[外文期刊]200626.PiyasSamanta;ChengChin-LungElectricalstress-in-ducedchargecarriergeneration/trappingrelateddegradationofHfAIO/SiO2andHfO2/SiO2gatedielectricstacks[外文期刊]200927.HanZhao;DavoodShahrjerdiInversion-typeindiumphosphidemetal-oxide-semiconductorfield-effecttransistorswithequivalentoxidethicknessof12AusingstackedHf-AlOx/HfO2gatedielectric[外文期刊]200828.LiCX;ZhangXFEnhancedperformanceofSiMOScapacitorswithHfTaOxNygatedielectricbyusingAlOxNyorTaOxNyinterlayer200829.ZhangXF;XuJPImprovedelectricalpropertiesofGemetal-oxide-semiconductorcapacitorwithHfTa-basedgatedielectricbyusingTaOxNyinterlayer200830.FischettiMVLong-rangecoulombinteractionsinsmallSidevices.PartⅡEffectiveelectronmobilityinthin-oxidestructures[外文期刊]2001(2)31.HyvertG;NguyenTAstudyonmobilitydegradationinnMOSFETswithHfO2basedgateoxide200932.DimitrovaT;AtanassovaEElectricalandtransportproper-tiesofRFsputteredTa2O5onSisolid-stateelectronics[外文期刊]1998(3)本文读者也读过(6条)1.冯丽萍.刘正堂.田浩.FengLiping.LiuZhengtang.TianHao新型高k栅介质HfSiON薄膜的制备及性能研究[期刊论文]-稀有金属材料与工程2008,37(11)2.张雪锋.季红兵.邱云贞.王志亮.黄静.张振娟.徐静平.ZHANGXuefeng.JIHongbing.QIUYunzhen.WANGZhiliang.HUANGJing.ZHANGZhenjuan.XUJingping超薄HfN界面层对HfO2栅介质GepMOSFET电性能的改进[期刊论文]-固体电子学研究与进展2010,30(4)3.谭婷婷.刘正堂.刘文婷.TanTingting.LiuZhengtang.LiuWenting快速退火对HfO2高k薄膜结构和电学性能的影响[期刊论文]-西北工业大学学报2010,28(4)4.章宁琳.宋志棠.万青.林成鲁新型高k栅介质材料研究进展[期刊论文]-功能材料2002,33(4)5.陈伟.方泽波.马锡英.谌家军.宋经纬.ChenWei.FangZeho.MaXiying.ChenJiajun.SongJingweiLa基高k栅介质的研究进展[期刊论文]-微纳电子技术2010,47(5)6.陈勇.赵建明.韩德栋.康晋锋.韩汝琦.ChenYong.ZhaoJianming.HanDedong.KangJinfeng.HanRuqiHfO2高k栅介质等效氧化层厚度的提取[期刊论文]-半导体学报2006,27(5)本文链接：