IRFS4620TRLPBF;IRFSL4620PBF;IRFS4620PBF;中文规格书-Data

12/18/08

PowerMOSFETBenefits
ImprovedGate,AvalancheandDynamicdV/dtRuggedness
FullyCharacterizedCapacitanceandAvalancheSOA
EnhancedbodydiodedV/dtanddI/dtCapability
Lead-FreeApplications
HighEfficiencySynchronousRectificationinSMPS
UninterruptiblePowerSupply
HighSpeedPowerSwitching
HardSwitchedandHighFrequencyCircuitsSDGIRFS4620PbFIRFSL4620PbFGDSGateDrainSource
96203SDGDDSGD2PakIRFS4620PbFTO-262IRFSL4620PbFVDSS200VRDS(on)typ.63.7mmax.77.5mID24AAbsoluteMaximumRatingsSymbolParameterUnitsID@TC=25°CContinuousDrainCurrent,VGS@10VID@TC=100°CContinuousDrainCurrent,VGS@10VIDMPulsedDrainCurrentPD@TC=25°CMaximumPowerDissipationWLinearDeratingFactorW/°CVGSGate-to-SourceVoltageVdv/dtPeakDiodeRecoveryV/nsTJOperatingJunctionandTSTGStorageTemperatureRangeSolderingTemperature,for10seconds(1.6mmfromcase)AvalancheCharacteristicsEAS(Thermallylimited)SinglePulseAvalancheEnergymJIARAvalancheCurrentAEARRepetitiveAvalancheEnergymJThermalResistanceSymbolParameterTyp.Max.UnitsRθJCJunction-to-Case–––1.045RθJAJunction-to-Ambient(PCBMount)–––40A°C°C/W300113SeeFig.14,15,22a,22b,14454Max.2417100-55to+175±200.96
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Repetitiverating;pulsewidthlimitedbymax.junctiontemperature.LimitedbyTJmax,startingTJ=25°C,L=1.0mHRG=25Ω,IAS=15A,VGS=10V.Partnotrecommendedforuseabovethisvalue.ISD≤15A,di/dt≤634A/µs,VDD≤V(BR)DSS,TJ≤175°C.Pulsewidth≤400µs;dutycycle≤2%.SDGCosseff.(TR)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to80%VDSS.Cosseff.(ER)isafixedcapacitancethatgivesthesameenergyasCosswhileVDSisrisingfrom0to80%VDSS.Whenmountedon1squarePCB(FR-4orG-10Material).Forrecommendedfootprintandsolderingtechniquesrefertoapplicationnote#AN-994.
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Static@TJ=25°C(unlessotherwisespecified)SymbolParameterMin.Typ.Max.UnitsV(BR)DSSDrain-to-SourceBreakdownVoltage200––––––V∆V(BR)DSS/∆TJBreakdownVoltageTemp.Coefficient–––0.23–––V/°CRDS(on)StaticDrain-to-SourceOn-Resistance–––63.777.5mΩVGS(th)GateThresholdVoltage3.0–––5.0VIDSSDrain-to-SourceLeakageCurrent––––––20––––––250IGSSGate-to-SourceForwardLeakage––––––100Gate-to-SourceReverseLeakage––––––-100RG(int)InternalGateResistance–––2.6–––ΩDynamic@TJ=25°C(unlessotherwisespecified)SymbolParameterMin.Typ.Max.UnitsgfsForwardTransconductance37––––––SQgTotalGateCharge–––2538QgsGate-to-SourceCharge–––8.2–––QgdGate-to-Drain(Miller)Charge–––7.9–––QsyncTotalGateChargeSync.(Qg-Qgd)–––17–––td(on)Turn-OnDelayTime–––13.4–––trRiseTime–––22.4–––td(off)Turn-OffDelayTime–––25.4–––tfFallTime–––14.8–––CissInputCapacitance–––1710–––CossOutputCapacitance–––125–––CrssReverseTransferCapacitance–––30–––Cosseff.(ER)EffectiveOutputCapacitance(EnergyRelated)–––113–––Cosseff.(TR)EffectiveOutputCapacitance(TimeRelated)–––317–––DiodeCharacteristicsSymbolParameterMin.Typ.Max.UnitsISContinuousSourceCurrent(BodyDiode)ISMPulsedSourceCurrent(BodyDiode)VSDDiodeForwardVoltage––––––1.3VtrrReverseRecoveryTime–––78–––TJ=25°CVR=100V,–––99–––TJ=125°CIF=15AQrrReverseRecoveryCharge–––294–––TJ=25°Cdi/dt=100A/µs–––432–––TJ=125°CIRRMReverseRecoveryCurrent–––7.6–––ATJ=25°CtonForwardTurn-OnTimeIntrinsicturn-ontimeisnegligible(turn-onisdominatedbyLS+LD)ConditionsVDS=50V,ID=15AID=15AVGS=20VVGS=-20VMOSFETsymbolshowingtheVDS=100VConditionsVGS=10VVGS=0VVDS=50Vƒ=1.0MHz(SeeFig.5)VGS=0V,VDS=0Vto160V(SeeFig.11)VGS=0V,VDS=0Vto160VTJ=25°C,IS=15A,VGS=0Vintegralreversep-njunctiondiode.ConditionsVGS=0V,ID=250µAReferenceto25°C,ID=5mAVGS=10V,ID=15AVDS=VGS,ID=100µAVDS=200V,VGS=0VVDS=200V,VGS=0V,TJ=125°CID=15ARG=7.3ΩVGS=10VVDD=130VID=15A,VDS=0V,VGS=10VpFA––––––––––––µAnAnCnsnsnC24100
 (V)0.010.11101001000ID,Drain-to-SourceCurrent(A)VGSTOP15V12V10V8.0V7.0V6.0V5.5VBOTTOM5.0V≤60µsPULSEWIDTHTj=25°C5.0V0.1110100VDS,Drain-to-SourceVoltage(V)0.11101001000ID,Drain-to-SourceCurrent(A)VGSTOP15V12V10V8.0V7.0V6.0V5.5VBOTTOM5.0V≤60µsPULSEWIDTHTj=175°C5.0V246810121416VGS,Gate-to-SourceVoltage(V)0.11101001000ID,Drain-to-SourceCurrent(A)TJ=25°CTJ=175°CVDS=50V≤60µsPULSEWIDTH-60-40-20020406080100120140160180TJ,JunctionTemperature(°C)0.51.01.52.02.53.03.5RDS(on),Drain-to-SourceOnResistance(Normalized)ID=15AVGS=10V1101001000VDS,Drain-to-SourceVoltage(V)10100100010000100000C,Capacitance(pF)VGS=0V,f=1MHZCiss=Cgs+Cgd,CdsSHORTEDCrss=CgdCoss=Cds+CgdCossCrssCiss05101520253035QG,TotalGateCharge(nC)0.02.04.06.08.010.012.014.0VGS,Gate-to-SourceVoltage(V)VDS=160VVDS=100VVDS=40VID=15A
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