MOS电路版图设计规则解析解读

设计规则解析以TSMC0.25m硅栅N阱CMOS工艺的部分设计规则为例哈工大微电子中心来逢昌一、几点说明1.MASKNAMES(Layer)PW---DefinitionofP-Well.NW---DefinitionofN-Well.OD---Definitionofthinoxidefordevice,andinterconnection.PO---DefinitionofPoly-Si.PP---DefinitionofP+implantation.NP---DefinitionofN+implantation.CO---DefinitionofcontactwindowfromM1toODorPO.M1---Definitionof1stmetalforinterconnection.VIA1--Definitionofvia1holebetweenM2andM1.M2---Definitionof2ndmetalforinterconnection.CB---Definitionofbondingpad.2.TerminologyDefinitionsforRegionN+OD:ODcoveredwithNP.P+OD:ODcoveredwithPP.ColdN-Well:N-Wellconnectedtothemostpositivevoltage(Vdd).HotN-Well:N-WellnotconnectedtothemostpositivevoltageHotN+diffusion:allN+diffusionregionsoutsidetheN-Wellwhichhaveapotentialnotequaltothesubstratevoltage.HotP+diffusion:allP+diffusionregionsinsidetheN-WellwhichhaveapotentialnotequaltotheN-Wellpotential.Colddiffusions:OutsideN-Well:adiffusionwhichhasthepotentialthesameasthesubstrate.InsideN-Well:adiffusionwhichhasthepotentialthesameastheN-Well.3.TerminologyDefinitionsforRuleWIDTHSPACE:CLEARANCE:EXTENSION:OVERLAP:哈工大微电子中心来逢昌二、N-WellRuleNW.W.1MinimumdimensionofaNWregionA1.2mNW.S.1MinimumspacebetweentowNWregionsB2.0mwithdifferentpotential(includeNWresistor)NW.W.2MinimumdimensionofahotNWregionA13.0m(NWresistance)NW.S.2MinimumspacebetweentowNWregionsC0.6mwiththesamepotentialMergeifspaceislessthan0.6mNWNWPWAAA1BC哈工大微电子中心来逢昌三、ThinOxideRule(activearea)OD.W.1MinimumwidthofanODregiontodefineA0.3mthewidthofNMOS/PMOSOD.W.2MinimumwidthofanODregionforB0.3minterconnect(N+/orP+)OD.S.1MinimumspacebetweentwoODregionsC0.4m(bothregionsareeitherinsideoroutsideaN-well)whichcanbeeitherN+toN+,P+toP+orN+toP+OD.C.1MinimumclearancefromNWedgetoaD0.15mN+ODregionwhichisinsidetheNWOD.C.2MinimumclearancefromNWedgetoaN+E0.6mODregionwhichisoutsidetheNW(coldorhot)OD.C.3MinimumclearancefromNWedgetoaP+F0.6mODregionwhichisinsideaNWOD.C.4MinimumclearancefromNWedgetoaP+G0.15mODregion(forPWpickup)whichisoutsideaNWOD.C.5MinimumclearancefrompolyedgetotheH0.32medgeofbutteddiffusionODregionOD.S.2MinimumspaceofN+ODtoP+ODforI0mbutteddiffusionP+N+N+N+P+N+P+POPOCBBN-WellP-WellP+P+(OD)FEACDGN+JIIJHButteddiffusionregionJOD.W.3AtleastonesegmentJoftheconsecutiveJ0.5mN+/P+buttededgesofbutteddiffusionODis0.5um哈工大微电子中心来逢昌四、PolyRulePO.W.1MinimumwidthofaPOregionforA,B,C0.24mthechannellengthandinterconnect(includepmosandnmos)PO.S.1MinimumspacebetweentwoPOregionsD,D10.4monODarea(polygate)PO.S.2MinimumspacebetweentwoPOregionsD20.36monfieldoxideareaPO.C.1MinimumclearancefromanODregionE0.14mtoaPOonfieldoxidePO.C.2MinimumclearancefromaPOgatetoF0.4marelatedODedgePO.O.1MinimumoverlapofaPOregionextendedG0.3mintofieldoxide(endcap)PO.R.1Bentgateat90degreeangleisnotallowed*0.4mPO.R.2MaximumlengthofPOonfieldoxideH50mbetweentwocontactsorbetweenonecontactandPOlineendwhenPOwidth0.35um.PO.L.1MaximumPOlengthwhichspaceis0.4umI1.0mandwithacontactinbetweenpolylinesPO.L.2MaximumPOlengthwhichis45degreebentI11.0mA/BD1N+/P+POGFPON+/P+ED2CDIPOPOPOPOPOODODODODHD2M1PO.R.3Minimumpolydensitymustbegreaterthanorequalto14%whichisderivedfromtotalpolyarea/chiparea哈工大微电子中心来逢昌五、P+S/DRule(Pplus)PP.W.1MinimumwidthofanPPregionA0.44mPP.S.1MinimumspacebetweentwoPPregionsB0.44mMergeifthespaceislessthan0.44umPP.C.1MinimumclearancefromanPPregionC0.26mtoanN+activeODregionPP.C.2MinimumclearancefromanPPregionC10.14mtoanonbuttededgeofN-wellpick-upN+ODregionPP.C.3MinimumclearancefromanPPedgeD*,E0.32mtoaP-ChannelPOgatePP.O.1MinimumoverlapfromanPPedgeF0.32mtoanODregionPP.E.1MinimumextensionofanPPregionG0.26mbeyondaP+activeregionPP.E.2MinimumextensionofanPPregionH0.04mbeyondaPwellpick-upP+ODregionPP.C.5ClearancefromaPPregiontothebutted*0.0medgeofabutteddiffusionN+OD(insideN-well)NPN+ODPPN-WellP-WellAANPPPNPNPHP+ODP+ODP+ODN+ODN+ODCBFEDGC1PP0.3m哈工大微电子中心来逢昌六、N+S/DRule(Nplus)NP.W.1MinimumwidthofanNPregionA0.44mNP.S.1MinimumspacebetweentwoNPregionsB0.44mMergeifthespaceislessthan0.44umNP.C.1MinimumclearancefromanNPregionC0.26mtoanP+activeODregionNP.C.2MinimumclearancefromanNPregionC10.14mtoanonbuttededgeofP-wellpick-upP+ODregionNP.C.3MinimumclearancefromanNPedgeD*,E0.32mtoaN-ChannelPOgateNP.O.1MinimumoverlapfromanNPedgeF0.32mtoanODregionNP.E.1MinimumextensionofanNPregionG0.26mbeyondaN+activeregionNP.E.2MinimumextensionofanNPregionH0.04mbeyondaNwellpick-upN+ODregionNP.C.5ClearancefromaNPregiontothebutted*0.0medgeofabutteddiffusionP+OD(insideP-well)PPP+ODNPP-WellN-WellAAPPNPPPPPHN+ODN+ODN+ODP+ODP+ODCBFEDGC1NP0.3m哈工大微电子中心来逢昌七、ContactRuleCO.W.1MinimumandmaximumwidthofaCOA0.3mregionCO.S.1MinimumspacebetweentwoCOregionsB0.3mCO.C.1MinimumclearancefromaCOonODC0.22mregiontoaPOgateCO.C.2MinimumclearancefromaCOonPOD0.28mregiontoanODregionCO.E.1MinimumextensionofanODregionE0.14mbeyondaODCOregionCO.E.2MinimumextensionofaPOregionbeyondF0.14maPolyCOregionCO.E.3MinimumextensionofaPPregionbeyondG0.18maODCOregionCO.E.4MinimumextensionofaNPregionbeyondH0.18maODCOregionCO.R.1COonactivepolygateregionisforbiddenCO.R.2Non-square(butted)contactisnotallowedF