大功率-SiC-MOSFET-驱动电路设计

DesignofhighpowerSiCMOSFETdrivercircuitSchoolofElectricalandElectronicEngineeringNorthChinaElectricPowerUniversityBaoding071003HebeiChinaAbstractKeywordsU5211Vol52No112015610ElectricalMeasurementInstrumentationJun102015CCCCCCCCttUUittiUtiUtttUUQUttUtIut5211Vol52No112015610ElectricalMeasurementInstrumentationJun1020155211Vol52No112015610ElectricalMeasurementInstrumentationJun102015RRVIVtLRRRVLMMÜVRRRit5211Vol52No112015610ElectricalMeasurementInstrumentationJun102015RRX5211Vol52No112015610ElectricalMeasurementInstrumentationJun102015大功率SiCMOSFET驱动电路设计作者：彭咏龙，李荣荣，李亚斌，PengYonglong，LiRongrong，LiYabin作者单位：华北电力大学电气与电子工程学院,河北保定,071003刊名：电测与仪表英文刊名：ElectricalMeasurement&Instrumentation年，卷(期)：2015(11)引用本文格式：彭咏龙.李荣荣.李亚斌.PengYonglong.LiRongrong.LiYabin大功率SiCMOSFET驱动电路设计[期刊论文]-电测与仪表2015(11)