BSS138-MOS管

BSS138N-Channel50-V(D-S)MOSFETFEATUREzHighdensitycelldesignforextremelylowRDS(on)zRuggedandRelaibleMARKING:SSMaximumratings(Ta=25℃unlessotherwisenoted)ParameterSymbolValueUnitDrain-SourceVoltageVDS50ContinuousGate-SourceVoltageVGSS±20VContinuousDrainCurrentID0.22APowerDissipationPD0.35WThermalResistancefromJunctiontoAmbientRθJA357℃/WOperatingTemperatureTj150StorageTemperatureTstg-55~+150℃SOT-231.GATE2.SOURCE3.DRAINElectricalcharacteristics(Ta=25℃unlessotherwisenoted)ParameterSymbolTestConditionMinTypMaxUnitsOffcharacteristicsDrain-sourcebreakdownvoltageV(BR)DSSVGS=0V,ID=250µA50VGate-bodyleakageIGSSVDS=0V,VGS=±20V±100nAVDS=50V,VGS=0V0.5µAZerogatevoltagedraincurrentIDSSVDS=30V,VGS=0V100nAOncharacteristicsGate-thresholdvoltage(note1)VGS(th)VDS=VGS,ID=1mA0.801.50VVGS=10V,ID=0.22A3.50Staticdrain-sourceon-resistance(note1)RDS(on)VGS=4.5V,ID=0.22A6ΩForwardtransconductance(note1)gFSVDS=10V,ID=0.22A0.12SDynamiccharacteristics(note2)InputcapacitanceCiss27OutputcapacitanceCoss13ReversetransfercapacitanceCrssVDS=25V,VGS=0V,f=1MHz6pFSwitchingcharacteristicsTurn-ondelaytime(note1,2)td(on)5Risetime(note1,2)tr18Turn-offdelaytime(note1,2)td(off)36Falltime(note1,2)tfVDD=30V,VDS=10V,ID=0.29A,RGEN=6Ω14nsDrain-sourcebodydiodecharacteristicsBodydiodeforwardvoltage(note1)VSDIS=0.44A,VGS=0V1.4VNotes:1.PulseTest;PulseWidth≤300µs,DutyCycle≤2%.2.Theseparametershavenowaytoverify.012340.00.10.20.30.40.50.60.20.40.60.81.01.21.41E-30.010.110123450.00.51.01.52.00.20.40.60.81.00.00.51.01.52.02.53.002468100123456Ta=25℃PulsedTransferCharacteristicsDRAINCURRENTID(A)GATETOSOURCEVOLTAGEVGS(V)3E-30.03Ta=25℃Pulsed0.3VSDIS——SOURCECURRENTIS(A)SOURCETODRAINVOLTAGEVSD(V)Ta=25℃Pulsed5V4V3VVGS=10V2VOutputCharacteristicsDRAINCURRENTID(A)DRAINTOSOURCEVOLTAGEVDS(V)0.1BSS138TypicalCharacteristicsTa=25℃PulsedVGS=4.5VVGS=6VVGS=10VON-RESISTANCERDS(ON)(Ω)DRAINCURRENTID(A)Ta=25℃PulsedID=500mAIDRDS(ON)——VGSRDS(ON)——ON-RESISTANCERDS(ON)(Ω)GATETOSOURCEVOLTAGEVGS(V)