第1-2讲MOS管特性和CMOS版图基础

EE141©DigitalIntegratedCircuits2ndManufacturing1第一、二讲MOS管特性与CMOS版图一、CMOS工艺简介；二、MOS管特性；三、Layout设计；四、估算寄生参数；五、SPICE中MOS器件参数设置参考书：[1]JanM.RabaeyAnanthaChandrakasanBorivojeNikolic，DigitalIntegratedCircuits–ADesignPerspective[2]中译本：数字集成电路：电路、系统与设计（第二版）周润德译，电子工业出版社出版EE141©DigitalIntegratedCircuits2ndManufacturing2一、CMOSManufacturingProcessTechnology(Process)三类工艺：双极型bipolar(三极管，二极管，电阻)NMOSCMOS（NMOS，PMOS）：目前主流工艺EE141©DigitalIntegratedCircuits2ndManufacturing3EE14129©DigitalIntegratedCircuits2ndIntroductionDieCostDieCostSingledieWaferFrom”(30cm)EE141©DigitalIntegratedCircuits2ndManufacturing41、Fabricationservices芯片制造代工厂（Foundry）1）TSMC台积电（台湾）可获工艺：0.5um,0.35um,0.25um,0.18um,0.13um,0.09um0.065um,0.045um2）CSM或称Chartered新加坡特许（新加坡）可获工艺：0.35um,0.25um,0.18um,0.13um,0.09um,0.065um,0.045um3）SMIC中芯国际（上海）可获工艺：0.35um,0.25um,0.18um,0.13um,0.09um4）HJTC或称HJ和舰科技(苏州)可获工艺：0.35um,0.25um,0.18um5）CSMC华润上华（无锡）可获工艺：3.0至0.5微米6）GSMC宏力(上海)可获工艺：0.25um,0.18um,0.15um7）HHNEC华虹(上海)可获工艺：0.35um,0.25um,0.18um8）SinoMOS中纬(宁波)可获工艺：0.8um/1umEE141©DigitalIntegratedCircuits2ndManufacturing5多项目晶圆服务多项目晶圆（多目标芯片）MultiProjectWafer---MPW多个使用相同工艺的设计，放在同一晶圆片上流片。每个设计可以得到数十片芯片样品。制造费用按照芯片面积分摊，成本仅为单独进行制造的5%-10%。EE141©DigitalIntegratedCircuits2ndManufacturing6Educationalservices（MPW服务机构）美国：MOSIS(MOSImplementationSupportProject)台湾：CIC(ChipImplementationCenter)欧盟：Europractice上海集成电路设计研究中心中国科学院EDA中心©DigitalIntegratedCircuits2ndManufacturing72、OverviewMOS管结构图:3DPerspectiveDSGGDSDSGEE141©DigitalIntegratedCircuits2ndManufacturing8substraten+n+p+substratemetal1polySiO2metal2metal3transistorviametal1insulator.多晶硅（衬底）CrosssectionEE141©DigitalIntegratedCircuits2ndManufacturing9CMOS有三类工艺：P-WellCMOSProcess(也基本不用)N-WellCMOSProcessDual-WellCMOSProcessWell---阱EE141©DigitalIntegratedCircuits2ndManufacturing10N-WellCMOSProcessEE141©DigitalIntegratedCircuits2ndManufacturing11p-welln-wellp+p-epiSiO2AlCupolyn+SiO2p+gate-oxideTungstenTiSi2Dual-WellCMOSProcessEE141©DigitalIntegratedCircuits2ndManufacturing12VDDVDDVinVoutM1M2M3M4Vout2EE141©DigitalIntegratedCircuits2ndManufacturing133、几种工艺方法1）oxidation（氧化）Si-substrateorP-typeorN-typeSi-substrateorP-typeorN-typeSiO2氧气SiO2是绝缘体。它的作用是什么？EE141©DigitalIntegratedCircuits2ndManufacturing14SiO2是绝缘体。它的作用是什么？EE141©DigitalIntegratedCircuits2ndManufacturing152）Cut（光刻）(a)Photoresis(光刻胶)PhotoresistSiO2Si-substrate(d)Finalresultafterremovalofresist去胶Si-substrate(b)Exposure曝光UV-light紫外光mask版图PhotoresistSiO2(c)Etch蚀刻chemicaletchPhotoresistSiO2EE141©DigitalIntegratedCircuits2ndManufacturing163）doping（掺杂）五阶元素SIO2起到掩蔽作用N-type扩散diffusion离子注入ionize（现在工艺）EE141©DigitalIntegratedCircuits2ndManufacturing174）连线连线：多晶硅金属EE141©DigitalIntegratedCircuits2ndManufacturing184、Processsteps(for双阱工艺）Firstplacetubstoprovideproperly-dopedsubstrateforn-type,p-typetransistors:p-tubn-tubsubstrateP-well（P阱）Processsteps1:衬底上做阱EE141©DigitalIntegratedCircuits2ndManufacturing19Processsteps2:做polyPatternpolysiliconbeforediffusionregions:p-tubn-tubpolypolygateoxideEE141©DigitalIntegratedCircuits2ndManufacturing20Processsteps3：扩散有源区Adddiffusions,performingself-masking:p-tubn-tubpolypolyn+n+p+p+EE141©DigitalIntegratedCircuits2ndManufacturing21Processsteps4：金属化与通孔Startaddingmetallayers:p-tubn-tubpolypolyn+n+p+p+metal1metal1viasEE141©DigitalIntegratedCircuits2ndManufacturing22二、MOS管特性阈值电压（thresholdvoltage:Vt）VgsVt:产生反型层VgsVt:没有反型层EE141©DigitalIntegratedCircuits2ndManufacturing23idid正比于W/LEE141©DigitalIntegratedCircuits2ndManufacturing24Draincurrentcharacteristics电流特性Cut-off(截止区)idGSD可变电阻区（线性区）饱和区（放大区）EE141©DigitalIntegratedCircuits2ndManufacturing25(1)Linearregion线性区(VGSVTN，VDSVGS-VTN)MOS管方程（NMOS为例）GSDCut-off(截止区)(2)Saturationregion饱和区（放大区）(VGSVTN，VDSVGS–VTN))1())((22DSnTNGSnnOXndVVVLWCI]2))[((]2)[(22DSDSTNGSnnoxnDSDSTNGSndVVVVLWCVVVVkIIDoxoxnOXnntCk'processtransconductance工艺跨导)(nnOXnnLWCkdevicetransconductance器件跨导nnChannel-lengthmodulation沟道长度调制系数carriermobility电子迁移率COX---gatecapacitanceperunitareaEE141©DigitalIntegratedCircuits2ndManufacturing26SDGSDGVtn=0.6VVtp=-0.6V)1())((22DSnTNGSnnOXndVVVLWCI)1())((22SDnTPSGppOXpdVVVLWCIIDIDThresholdvoltage（以饱和区方程为例）：NMOSPMOS)22(0FSBFnTNTNVVVThresholdvoltageforVSB=0)22(0FBSFpTPTPVVV0TNVnFBody-effectcoefficientFermipotential(typical为-0.3V)费米电势Bulk调制效应，总是使有效阈值电压的绝对值增大一个例子:NMOS管的VTN0=0.68V,当VSB=-5V时，Vt=0.16V.有效阈值电压Vt=Vt0+Vt=0.84VEE141©DigitalIntegratedCircuits2ndManufacturing27线性区两端均开启截止区两端均不开启饱和区一端开启；另一端不开启（S端开启；D端不开启）gatedrainsourcecurrentIdgatedrainsourceIdMOS的工作区域（如何知道线性区、饱和区，截止区）：SDG源端开启VgsVtn漏端开启VgdVtnNMOS源端开启Vgs-Vtp漏端开启Vgd-VtpPMOSSDGVtn=0.6VVtp=-0.6VEE141©DigitalIntegratedCircuits2ndManufacturing28三、LayoutDesignRulesPolysiliconAluminum1、Layout基本概念EE141©DigitalIntegratedCircuits2ndManufacturing29Masksaretoolingformanufacturing版图用于做IC.Manufacturingprocesseshaveinherentlimitationsinaccuracy制造工艺有精度限制.Designrule