氮化铝粉末的生产工艺

1文献检索的作业实习：专利文献检索实习目的：了解专利文献检索的方法实习要求：能用多种途径进行专利文献检索实习设备：计算机实习内容：1、氮化铝粉末的生产工艺（国外专题数据库）（1）、Rareearth-activatedaluminumnitridepowdersandmethodofmakingInventorsBINGHANUSApplicantsOSRAMSYLVANIAINCUSPriorityUS763689P31-Jan-2006ClassificationsInternational(2006.01):C04B35/00European:C04B35/581;C01B21/072;C09K11/08J;AbstractRareearth-activatedaluminumnitridepowdersaremadeusingasolution-basedapproachtoformamixedhydroxideofaluminumandarareearthmetal,themixedhydroxideisthenconvertedintoanammoniummetalfluoride,preferablyarareearth-substitutedammoniumaluminumhexafluoride((NH4)3Al1-xRExF6),andfinallytherareearth-activatedaluminumnitrideisformedbyammonolysisoftheammoniummetalfluorideatahightemperature.Theuseofafluorideprecursorinthisprocessavoidssourcesofoxygenduringthefinalammonolysisstepwhichisamajorsourceofdefectsinthepowdersynthesisofnitrides.Also,becausethealuminumnitrideisformedfromamixedhydroxideco-precipitate,thedistributionofthedopantsinthepowderissubstantiallyhomogeneousineachparticle.（2）、ALUMINUMNITRIDESINTEREDBODYANDMETHODOFPRODUCINGTHESAME2公开号US5482905申请号US/08/178642申请人SUMITOMOELECTRICINDUSTRESLTDSUMITOMOELECTRICINDUSTRIESLTD发明人NAKAAHATASEIJIAMATSUURATAKAHIROSOGABEKOUICHIYAMAKAWAAKIRAHATASEIJIMATSUURATAKAHIROSOGABEKOUICHIYAMAKAWAAKIRA申请日期1994-01-05授权日期1996-01-09国际分类C04B35/58C04B35/58美国专利分类501/98.4501/98.4代理人Bierman;JordanB.BiermanandMuserlianman;JordanB.BiermanandMuserlian摘要AnaluminumnitridesinteredbodycomprisingaluminumnitridecrystalsbelongingtoaWurtzitehexagonalcrystalsystemwhereinthe3axesa,bandcoftheunitlatticeofthecrystalaredefinedsuchthattheratiob/aofthelengthsoftheaxesbandais1.000nearthecenterofthecrystalgrainandlieswithintherange0.997-1.003inthevicinityofthegrainboundaryphase.Aluminumnitridesinteredbodyisproducedbysinteringamoldedbodyofarawmaterialpowderhavingaluminumandnitrogenasitsprincipalcomponentsatatemperatureof1700.degree.-1900.degree.C.inanon-oxidizingatmospherehavingapartialpressureofcarbonmonoxideorcarbonofnotmorethan200ppmandthencoolingthesinteredbodyto1500.degree.C.oralowertemperatureatarateof5.degree.C./minorless.Thealuminumnitridesinteredbodyhasagreatlyimprovedthermalconductivityand,therefore,issuitableforheatslingers,substratesorthelikeforsemiconductordevices.权利要求1.AnaluminumnitridesinteredbodycomprisingaluminumnitridecrystalsbelongingtoaWurtzitehexagonalcrystalsystemwhereinthreeaxesa,b,andcofaunitlatticeofthecrystalaredefinedwherebyaratiob/aofthelengthsofaxesbandais1.000nearacenterofthecrystalgrain,andlieswithinarangeof0.997to1.003inavicinityofagrainboundaryphase,saidsinteredbodycontainingatleastonecompoundselectedfromthegroupconsistingofTi,V,andCo.32.Analuminumnitridesinteredbodyasdefinedinclaim1whereinthesinteredbodyhasathermalconductivityof150W/m.Korhigher.3.Analuminumnitridesinteredbodyasdefinedinclaim1whereinthesinteredbodyhasa3-pointflexuralstrengthof35kg/mm.sup.2orhigher.4.Amethodofmanufacturinganaluminumnitridesinteredbodycomprisingadding,toarawmaterialpowdercomprisingaluminumandnitrogenasitsprincipalcomponents,0.13to0.5%byweightofatleastonecompoundselectedfromthegroupconsistingofTi,V,andCo,moldingtherawmaterialpowdertoformamoldedbody,sinteringsaidmoldedbodyatatemperatureof1700.degree.to1900.degree.C.inanon-oxidizingatmospherehavingapartialpressureofcarbonmonoxideorcarbonofnotmorethan200ppmtoformasinteredbody,andcoolingsaidsinteredbodyto1500.degree.C.orless,atarateof5.degree.C.perminute,orless.描述BACKGROUNDOFTHEINVENTION1.FieldoftheInventionThisinventionrelatestoanaluminumnitride(AlN)sinteredbodyhavinganexcellentthermalconductivity,andamethodofmanufacturingsuchabody.2.DescriptionofthePriorArtAluminumnitridehasverygoodelectricalinsulationpropertiesandaveryhighthermalconductivity.Forthisreason,aluminumnitridesinteredbodiesareusedasareplacementforberyllia(BeO)inpowertransistorheatslingersorthelike,asareplacementforalumina(Al.sub.2O.sub.3)insubstratesorpackagingmaterialsforsemiconductordevices,andinlasertubes,etc.Althoughthethermalconductivityofaluminumnitridesinteredbodiesisfarhigherthanthatofotherceramicmaterials,thethermalconductivityofactualaluminumnitridesinteredbodiesindustriallyproduceddoesnotexceedabouthalfthetheoreticalvalueof320W/mK.Itisknownthatthethermalconductivityofaluminumnitridesinteredbodieslargelyreducewhenitcontainsimpurities,suchassiliconoroxygen,insolidsolution.Recently,duetohigherpurityofthe4rawmaterialpowderandimprovedsinteringtechniques,ithasbecomepossibletoobtainsinteredbodieshavingathermalconductivityofatmostapproximately180W/mK.However,evensuchconventionalaluminumnitridesinteredbodiesarestillunsatisfactoryintheirthermalconductivityand,withrecenthigherlevelsofintegrationofICandLSI,aneedhasemergedforheatslingers,substrates,packagingmaterialsorthelikewithenhancedheatreleasingpropertiesfortheuseinsemiconductordevices.………………………….2、合成氨原料气得净化方法（中国专利）（1）、一种合成氨原料气的净化方法一种用深度变换配甲烷化代替铜洗工艺，用以净化合成氨原料气的方法。该工艺通过两次低温变换反应，使原料气ＣＯ降至＜０．３％，此二次低变反应均采用低温，高活性耐毒性能力极强的钴钼系变换催化剂。再经氧化铁和氧化锌两级脱硫至总含硫量痕量，最后通过甲烷化反应将原料气净化至ＣＯ＋ＣＯ－［２］≤１０ＰＰＭ。本方法工艺稳定，气体净化度高，延长了合成催化剂的寿命。简化了流程，管理方便，运行费用低，节能效果好，特别适用