CMP-Process-Introduction

CMPProcessIntroduction2OutlineCMPOverviewAMATTool,Mirra-MesaCMPConsumableSlurryPolishPadDiamondDiskCMPProcessSTI,ILDandIMDCMPPolyCMPTungstenCMPCopperCMPCMPOverview4WhatisCMPChemicalMechanicalPolishingGlobalplanarizationtechniqueMajorApplicationDielectricPlanarizationPolyPlanarizationMetalPolishingWPlugAlFilmCuDamascene5BPSGPre-MetalDielectricReflowAsdepositedAfterreflow6PlanarizationEfficiency0.11.010100100010000CMPResistEtchBackBPSGReflowSpinonGlass(SOG)CVD,Dep/Etch(HDP)HDP,ECR(Gapfill)(Local)(Global)PlanarizationDistance(mm)7ManufacturingComplexitieswithUnplanarizedLogicStructuresSource:Semicon/West1994Metal3Metal2Metal1MetalStringersLithographDepthofFocusLowPerformance-longmeanfreepathlengthMetalEtchDepthVariance8AdvantagesOfCMPLargeDepth-of-FocusReq’dLargeThicknessEtchReq’dPoorStepCoverageUniformandPlanarSurfaceHigherPerformanceImprovedDieYieldsandDeviceReliabilitySimplifiedLithography0.8mm0.5mm0.35mm2-3MetalLevels3MetalLevelsWithoutCMPWithCMPCMPisEnablingTechnologyforAdvancedSemiconductorDevicesLithographyDepth-of-FocusMetalStringersMetal3Metal2Metal1Note:S.Nagetal.,TexasInstruments,VMICProceedings1995,p.24-30(semonright)9TheEvolutionofOxidePlanarization19920.50mmP5Logic0.50µm(16Mb)19950.35mmP6Logic0.35µm(64Mb)19980.25mmP7Logic0.25µm(256Mb)1999-20000.18mmP8Logic0.18µm(1Gb)19890.80mmP4Logic0.8µm(4Mb)ProductionStartDesignRuleDeviceResistEBCMPSOGReflowDep/EtchLowkCMP10TheEvolutionofMetalPolishing19920.50mmP5Logic0.50µm(16Mb)19950.35mmP6Logic0.35µm(64Mb)19980.25mmP7Logic0.25µm(256Mb)1999-20000.18mmP8Logic0.18µm(1Gb)19890.80mmP4Logic0.8µm(4Mb)ProductionStartDesignRuleDeviceCVDW/EBAlReflowWPlugCMPCuDamascene11CMPMarketSizebyApplication$0$500$1,000$1,500$2,000$2,500$3,00019961997199819992000E2001F2002F2003F2004F2005FCalendarYearSystemsRevenue,$MCuAlWPolySTIPMDILDCoppergrowstonearly30%Sources:AppliedCMPDataquest,VLSIResearch,BusinessWire,MorganStanleyDW,SalomonSmithBarney,KlineAssociates12Sources:AppliedCMPDataquestVLSIResearchMSDWBusinessWire*CMPonly(w/oStandalonePostCMPClean)Includes300mmdelayedrevenuerecognition$0$500$1,000$1,500$2,000$2,500$3,000$3,50019961997199819992000E2001F2002F2003F2004F2005FCalendarYearSystemRevenues,$MCMPRevenuesIntegratedStandalone$316$627$1,087$1,458$1,139$1,491$2,847$523$2,1712xgrowthforCMPtoCY2005$2,061CMPMarketOpportunity*CMPOverviewTools14CMPisChemicalMechanicalmaterialremovalforwaferPlanarizationWhatisCMP?MacroViewplatenrotationMicroViewCarrierFilmpolishingpadHardPadSoftPadWaferCarrierPolishingPlaten(table)Slurry15WhatisCMP?SchematicdiagramofthedielectricplanarizationprocessUrethanePolishingPadChemistryandabrasionisusedtoplanarizethewafersurfaceTravelDownforceWaferSlurryParticlesAMATCMPToolMirra-Mesa17MechanicalParametersthatAffecttheCMPProcessPlatenRotationNote:SweeppositionsarereferencedfromcenterofplatentocenterofheadSlurryDeliveryRate(ml/min)PolishingHeadSweepPressureRotationPlatenPadPadConditionerSweepDownForceRotation18ISRMHardwareImplementationTopViewSideViewNote:nottoscalePlatenWafer•Laserinterferometerembeddedinplaten•DatacollectedonceperplatenrevolutionbyPCcontroller•DatacollectionfrequencyisindependentofplatenrotationspeedPlatenlaserPolishingPadWaferDETECTOR19AMATCMPFamily200mmMirraMirraTrackMirraDNSMirraMesaObsidian300mmReflection20MirraPolisher•PadConditioner(In-situ,Ex-situ)•Load/unloadstation•4cassetteinput/output•InterplatenCleaning•MultipleSlurrydeliveryOxide/Metalpolishcompatible•4PolishingHeads(IndependentlyControlled)•3PolishingPlatens(IndependentlyControlled)21ProcessFlexibilityThreeIndependentPolishingStationsMulti-StepPolishCapability3-Step(Polishonallplatens)2-step(Polish/barrierremovalwithbuff)Inline(SequentialPolish)ModeSequentialPolishforHighestthroughputmodeBatchModeforprocessdevelopmentOxideOxideOxideOxideOxideBuffWBuffTiN/TiWTiN/TiBuffOxideNitrideBuffSTIOxideMetalW22MirraMesa200mmCMPMesa™CleanerwithSingleWaferMegasonicsLowestDefectsTitanProfiler™PolishingHeadProduction-ProvenEdgeExclusionforIncreasedDieYieldFullscan™EndpointSystemReducedNeedforOverpolishiScan™ThicknessMonitorforCuMaximumThroughputIn-lineMetrologywithWTWClosedLoopControlMaximizesProductivityandControlProduction-ProvenSolutionforAllApplicationsOver1,000MirraSystemsShippedMulti-Step,Multi-PlatenProcessSolutionHighestProductivity23Footprint76ft2(79Wx138Dx91H)2ndrobot&rinsepadsaddedtoEPO-22XseriestoboostthroughputSTRENGTHS:RelativelylowpriceReputationforreliabilityWEAKNESSES:Maxthroughput40wph(2minpolishw/rinse)Throughputw/serialbuff20wphProcessperformanceandflexibility,includingcleaningTitan-likeheadtechnologyindevelopment,notproduction-provenEbaraEPO222H/F*REX200NewarchitectureSources:AppliedCMP,AMJCMPBusinessWire,MSDW(Japan)138794cassettesDry-returnrobotTransferbufferPencilscrubber&SRDwithmegWetrobotsScrubberwithmegWaferflipperTransferstationsBuffplatensPlatensMembraneheadsPadconditionersComplexnewdesign24Footprint:72ft272Wx144Dx80Hinches2polishingbelts,1auxiliarybuff,4wafercarriers,4headmotors1withunder-beltm