a-Si厚度对TFT开关特性的影响

Jul.2011126AdvancedDisplaya-SiTFT，，，，，，（，230012）：，a-SiTFT。a-Si，。，，a-Si33～61%TFT，a-Si33%，TFT，，，。：TFT；a-Si；；；；：TN141.9：BEffectofa-SiliconThicknessonTFTCharacteristicYANFang-liang,SHENShi-fei,HOUZhi,LIUZu-hong,ZHENGZai-run,LIUFeng,LIDou-xi(HefeiBOEOptoelectronicsTechnologyCo.,Ltd.,HefeiAnhui230012,China)Abstract:TheElectricalCharacteristicsofTFTwithdifferenta-SiremainedthicknesswasstudiedbytheonlineElectricaltestequipment.Inthisexperiment,a-Siremainedthicknesswasmodifiedbydifferentetchtime.ThestableareaandpoorpointoftheTFTelectricalpropertieswerefoundinthisexperiment.Resultsshowthat,whileotherconditionsinvariable,betterelectricalpropertieswereobtainedwhena-Siremainedthicknessisintherangeof33~61%.Whenlowerthan33%,theTFT'selectricalcharacteristicsbecomepoor,thatis,operatingcurrentandmobilitybecomesmall,thresholdvoltagebecomelarge.Keywords:TFT;a-Sithickness;electricalcharacteristic;Ion;Vth;Mob：2011-05-26：a-SiTFTLCDFPD、CRTa-SiliconTFTLCD、a-SiliconTFTLCD。a-SiTFT、TFTa-SiTFTChannel23Jul.2011126AdvancedDisplaya-SiliconTFTLCD[1]。a-SiTFTVth、Ion、Ioff、a-SiTFT。1TFTTFTa-Si[2]a-SiTFT2～3TFT。TFT1。。TFT-LCDTFTON/OFFONOFF。TFTIonTFTVg=15VTFT、、。IoffVg=-8VTFT。VthVgVth。MobTFT。2EPMelectronicparametermeasurementEPM、、、TFTTFT。KMACa-Si。Sinwave。a-Si。a-Sia-SiEPMTFTVth、Ion、Ioff、μI/Va-SiTFT。3TELECCPProcesschamber30mtorrSource/BiaspowerHe/SF6/Cl2a-Sia-Si。1,500×1,850mm18.5inch4MaskIDTest115sa-SiEtchRateTest25sTest310sTest415s1a-SiTFT：a-SiTFT24Jul.2011126AdvancedDisplay2a-Si2I-VTest520sTest625sTest730sTest835sTest940sTest1045s。Test1～10a-SiPECVDa-Si。4Test1a-SidepositionTHKa-SiRemainTHKEtchrate=Dep.THKa-silicon&N+a-Silicon-KMacDateRemainEtchTime1EtchrateTest1glassa-Si1。1PECVDa-Sia-SiEPMTFT。TFT。Test1a-Sitest2～10EPMTest2～10TFTI/V。Test2～10a-Si。2TFTIdsVgVds=15VVg=-20～+20Vg0.2VI/V。Vg+15VVg-8VTFT5Test2Vg-20V20VIds。a-SiIds。TFT、Ids-VsIds-Vg2。115sμΑΑ：a-SiTFT。25Jul.2011126AdvancedDisplaya-Si:L、a-Si:Hn+n+a-SiTFTN+、50nm。n+/。n+a-Sin+TFTn+a-Sin+Cell。Test2、3n+a-Sin+a-SiμΑTFT。TFTn+a-SiChannel。2a-Si、、、4。TFTONOFF“ON”TFTIonIon≥6CpixelVonNrow/Tframe2IonTFTCpixelVonNrowTframe6。TFTIoff4TFT：a-SiTFT26Jul.2011126AdvancedDisplayIoff≤CpixelVon/(TframeNgrayM)3NgrayMIon/Ioff≥6MNrowNgray4TFT、、TFTVD≥VG-VTIds=WCiμ2LVG-VT25“Ioff”Ids[3]Ids=WLqkr姨T3/2e-Eopt/(2kT(μe+μp)VDd6WLμCiVTVGVD、da-SiEoptT。IonIoffIon/Ioff105～10674a-Si、a-Si、。6IoffdIoff4。。[4]/a-Sia-SiNx/a-Si。a-Sia-SiTFTa-Si。a-Si。20～35sTFT35sTFT。a-Si33～61%TFT33%TFT。TFT。51TFT233～61%TFTTFTTFT、TFT、。333%TFT。[1].a-SiliconTFT[J].20088。[2].TFT[M].2007.[3].640×480TFT-AMLCD[C].Vol.20No.Mar.1999.[4].[C].Vol.25No.2.Feb.1997.：[e-mail]。[e-mail]。1980-：a-SiTFT27Jul.2011126AdvancedDisplay201162411。、LED。。LEDLED。LED、、。。50,046m293,000m21、4、2、2、、。、、、。31、2、1、152,000m2。2、1、141,000m2。LED、LEDLED3、8316.3。LED、。[e-mail]。[e-mail]。[e-mail]。[e-mail]。：a-SiTFT28