ITO薄膜的磁控溅射工艺优化研究

ITO132(11510640;21200127)GrowthofIndiumTinOxidesFilmsbyMagnetronSputteringChangTianhai13,SunKai2(11CollegeofElectronic&Commun.Eng.,SouthChinaUniv.ofTechnol.,Guangzhou510640,China;21ShanghaiShu2GuangMachineryWorks&Corp,Shanghai200127,China)AbstractTheinfluenceofgrowthconditions,includingthesubstratetemperature,sputteringvoltage,andoxygenpartialpressure,onthemicrostructuresandphysicalpropertiesoftheindium2tin2oxides(ITO)filmsdepositedbymag2netronsputteringofaceramictargetwasstudied.Thefilms,grownunderdifferentgrowthconditions,werecharacterizedwith,andX2rayphotoelectronspectroscopy(XPS).TheresultsshowthatthefilmgrowthconditionssignificantlyaffectthepropertiesoftheITOfilms.Undertheoptimizedconditions,thatis,atasubstratetemperatureof295,asputteringvolt2ageof250V,andanoxygenpartialpressureof8%ofthebasepressure,thesheetresistanceoftheITOfilmsis18,andthevisiblelighttransmittanceis80%.KeywordsITO,Opticalandelectricalperformance,Magnetronsputtering,Optimizingtechnics,XPSITO,:295250V8%,5mm,1880%ITOXPS:ITOSnSnO2,InIn2O3,518%85%ITOXPS:TB43:Adoi:10.3969/j.issn.1672-7126.2009.03.21(IndiumTinOxide,ITO),,(OrganicLight2EmittingDiode,OLED),ITOIn2O3SnO2,[123]ITO,,ITOInSnIn2O32SnO2ITO,,,(),ITO,,,,,,,,ITO,ITO:20082092023:Tel:[phone];E2mail:[e-mail]423CHINESEJOURNALOFVACUUMSCIENCEANDTECHNOLOGY29320085616700mm800mm2060mm,K600,Leybold,ITO1000mm500mm5mm11112,(400nm750nm)(10m)1RFig11Thedependenceofsheetresistance,R,onsubstratetemperature2TRFig12ThedependenceofvisibletransmissivityTandinfraredreflectance,R,onsubstratetemperature:,,,295,,,,Sn4+,,InO,,,,,SiO2,,ITO,,11234,,,,,,250V3RFig13ThedependenceofsheetresistanceRonsputteringvoltage4TRFig14ThedependenceofvisibletransmissivityTandinfraredreflectanceRonsputteringvoltageattheshortwavelength,-400V-500V()400eV500eV,ITO[4]In2O3InO+OInO,ITO,,,InO,5233:ITODrude[5],:=C(m/Ne2)1/2C,e,m,N,N,,,InO,Brustein2Moss[5],11356(400nm750nm)(10m)5,RFig15Thedependenceofsheetresistance,R,onoxygencontent6,TRFig16ThedependenceofvisibletransmissivityTandinfraredreflectance,R,onoxygencontent:(710)%,,ITOn,In2O3,In3+,,,,,,[6],,8515,114ITO,ITO,:250V,295,8%1000mm500mm5mm,ITO,7,80%,463175nm87194%,187ITOFig17TransmissivityoftheITOthinfilm2ITOXPSEscaLab2202IXLX(XPS)ITO,XPSXAlK(148616eV),X300W,Ar+,1A,100A/cm2,3cm3cm211ITO6,8ITO8ITOXPSFig18XPSdepthprofilesfortheITOfilm62329,ITO,OInSn,[7],InSnOxIn2O3SnO2,85%518%,C,,4413%,5%212ITO,480eV498eV440eV458eV,910,,X9ITOSnO2XPSFig19XPSspectrumoftheSnO2inITOfilm10ITOIn2O3XPSFig110XPSspectrumoftheIn2O3inITOfilm9:Sn3d5/248614eV,SnO2X,,InSnOxSnSnO210:In3d5/244511eV,In2O3X,,InSnOxInIn2O3,3ITO,:,,300;,,,(710)%;,,,250V,1000mm500mm5mm,ITO,80%,463175nm87194%,18,,ITO,[1]KloeppelA,KriegseisW,MeyerBK,etal.DependenceoftheelectricalandopticalbehaviourofITO2silver2ITOmultilayersonthesilverproperties[J].ThinSolidFilms,2000,365(1):139-146[2]OmataT,FujiwaraH,Otsuka2Yao2MatsuoS,etal.ElectrontrappingcenterandSnO22dopingmechanismofindiumtinox2ide[J].AppliedPhysicsA:MaterialsScienceandProcessing,2000,71(6):609-614[3],,,.ITO[J].,2007,27(3):195-199[4],,,.[J].,2008,28(5):83-87[5]AvendanoE,BerggrenL,NiklassonGA,etal.Electrochromicmaterialsanddevices:Briefsurveyandnewdataonopticalab2sorptionintungstenoxideandnickeloxidefilms.ThinSolidFilms,2006,496:30-3[6],,,.ITO[J].,1995,15(2):135-139[7]Choi,H2W,Farson,D,Kim,K2R.,Hong,S2K,(2005)DirectwritepatterningofITOfilmbyfemtosecondlaserablation,inProceedingoftheLaserMicrofabricationConference,ICALEO2005,Miami:20-277233:ITO