TFT-LCD ARRAY制程介绍

200405311學習目標Š暸解TFT的結構Š暸解TFT-LCDArray之製造流程Š簡易Array相關缺陷介紹200405312TFT產業結構液晶監視器液晶電視TFT面板控制ICPCB彩色濾光片偏光片背光模組驅動ICTFT基板訊號傳輸ICTFT基板玻璃光阻劑CCFLCCFFL導光板200405313TFTLCD之製造流程ArrayFabricationArrayPatternInspectionArrayRepairArrayTestCellAssemblyArrayRepairCellInspectionCellRepairModuleAssemblyModuleInspectionModuleRepair200405314TFTLCD之結構200405315OperationPrinciplesofTNLCD•Alignmentofliquidcrystalmolecules•OperationprinciplesofNWmodeTNLCDNW:NormallyWhite,TN:TwistedNematic200405316T-VCurveofTFTLCD•OperationprinciplesofNWmodeTFTLCD•TypicalT-VcurveofNWmodeTFTLCD200405317G1G2G3GmGm-2Gm-1S1S2S3Sn-2Sn-1SnArray面板示意圖200405318GDSDSG1.TFT為一三端子元件。2.在LCD的應用上可將其視為一開關。3.為何要採InvertedStaggered之結構？DSG認識TFT1(ThinFilmTransistor)200405319TFT-LCD關於Array之重要參數1.臨界電壓：Vth2.電子遷移率(Mobility)：unVp=unΕ3.Ion/Ioff4.開口率(ApertureRatio)(1)TFT；(2)Gate&Source線；(3)Cst；(4)上下基板對位誤差；(5)DisclinationofLC5.因Cgs產生之DCVoltageOffset6.訊號傳輸時的時間延遲(TimeDelay)及失真(Distortion)2004053110TFT之製造流程DepositionCleaningPhotolithographyEtchStripGateMetalC1GateMask(#1)GateMetalS1SiNxia-Sin+a-SiActiveMask(#2)ia-Sin+a-SiS2C2DataMetalDataMask(#3)DataMetalS3C3n+a-Si(Channelarea)SiNx(Passivation)ViaHoleMask(#4)ContactHoleS4C4ITOPixelMask(#5)ITOS5C52004053111PhotoResistThinFilmGlassExposureLightPhotoMaskStripThinFilmGlassPRcoatingPhotoResistDevelopEtch基本之曝光/顯影/蝕刻概念2004053112TFTArray組成材料MASK1-GEGate電極MetalIMASK5-PE畫素電極ITOMASK3-SDSource/Drain電極MetalIIMASK2-SE通道與電極之接觸介面(n+)a-Si：HMASK2-SEChannel(通道)(i)a-Si：HMASK2-SEGI層(Gate絕緣層)SiNxMASK4-CHContactholeSiNx2004053113Mask1：GE(Gate電極形成)AA’1.洗淨2.濺鍍MetalI3.光阻塗佈/曝光/顯影4.顯影檢查/光阻寸檢5.MetalI蝕刻(WET)6.光阻去除7.製程完成檢查AA’2004053114Mask2：SE(島狀半導體形成)AA’1.成膜前洗淨2.成膜SiNx3.成膜前洗淨4.成膜SiNx/a-Si/n+Si5.光阻塗佈/曝光/顯影6.顯影檢查/光阻寸檢7.蝕刻(DRY)8.光阻去除9.製程完成檢查AA’2004053115Mask3：SD(Source及Drain電極形成)AA’1.成膜前洗淨2.成膜MetalII3.光阻塗佈/曝光/顯影4.顯影檢查/光阻寸檢5.硬烤6.蝕刻MetalII(WET)7.蝕刻n+Si(BCE)(DRY)8.光阻去除9.製程完成檢查AA’2004053116Mask4：CH(ContactHole形成)1.成膜前洗2.成膜SiNx3.光阻塗佈/曝光/顯影4.顯影檢查/光阻寸檢5.蝕刻(DRY)6.光阻去除7.製程完成檢查A’AAAA’2004053117Mask5：PE(畫素電極形成)1.成膜前洗淨2.成膜ITO3.光阻塗佈/曝光/顯影4.顯影檢查/光阻寸檢5.蝕刻(WET)6.光阻去除7.製程完成檢查8.退火A’AAAA’2004053118GlassGlassGateMetalDepositionGatePatterningSiNxDepositionia-SiDepositionn+a-SiDepositionActivePatterningDataMetalDepositionDataMetalPatterningn+a-SiEtchSiNxDepositionViaHolePatterningITODepositionPixelPatterningPixelDataPassivationSiNxn+a-Siia-SiGateinsulatorSiNxGateViahole5MBCE製程2004053119Array各製程之重點監控項目9999999ESD9999蝕刻速率均一性9999999mura99999CDETCH9DRYETCH9WETCLEAN9Coater99CVD9WETETCH9StepperPHOTO99PVDThinFilm膜厚均一性Particle製程別部門2004053120缺陷判斷之技巧與工具點線不良判定TFT電性缺陷形狀/大小/位置/斷面元素比對缺陷形狀/大小/(斷面)顏色/透光顏色/斑點/mura/條紋/明暗技巧缺陷全檢再以OMReview顯示特性檢查缺陷正確位置確認Taper量測缺陷成分比對3um以下之缺陷解析3um以上之缺陷檢查快速/明顯之缺陷檢查適用範圍點不良檢查機TEGFIB斷面分析EDS成分分析SEMOM顯微鏡斜光目視工具方法2004053121例1：斜光檢查(CVD定點膜厚不均)2004053122例2：OM檢查(PVD極小異物)2004053123例3：SEM解析1(PVD極小異物)2004053124例3：SEM解析2(ContactHole)2004053125Theelementofthesilicon,aluminum,oxygenwasdetected.Auasspatteringmetal.Theaccelerationvoltage(KeＶ）例4：EDS解析2004053126例5：FIB解析2004053127ITOSELF_LEAK(S_ITO)CS_LEAKEXTRA_CHARGEOTHER_LEAKIOFF_LKLOW_VGGT_LEAKSSR_OSSR_SGSR_OGSR_SSOGOGCGSSS其他：GG、SC、CSO、POOR-OPEN其他：OTHERS、個數、連續、距離Array檢出之主要缺陷2004053128GE工程欠陷¾缺角欠損¾Al殘¾GOCO¾GC2004053129缺角欠損-PVDPVDGE_DGE_R2004053130缺角欠損-PHOGE_DPVD膜完整無欠損2004053131Al殘-PHO樹枝狀異物GE_DGE_RGE_DGE_RGE_DGE_DTELPHOIonizer噴嘴髒2004053132Al殘-PVDGE_DGE_R2004053133GOCO-PVD膜浮型GOCO膜浮型GOCOBellows漏氣造成油氣污染導致膜浮起,或膜搭不上去光阻pattern完好膜面受損2004053134GOCO-PHOGE_DGE_EGE_R2004053135GCPVDPHOGE_DGE_R