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全球半导体晶体生长模拟著名商业软件FEMAG--CUSP磁场对8英寸半导体级硅晶体生长的影响ReportBrukerASCFeb,9,2012FEMAGSoft©2012FEMAGSoft©2012OBJECTIVEPROCESSCONDITIONCZfurnace-8inchdiametercrystal,24inchdiametercrucibleTopredicttheimpactofaCUSPmagneticfieldoperatingat140Awiththeneutral-axislocatedonthemeltfreesurface.SIMULATIONPROCESSThegrowthprocessismodeledasTimedependentsimulationtakingintoaccountthetransienteffectstakingplaceduringthegrowthofthecrystalPARAMETERSOBSERVEDTheconcentrationoftheOxygeninthemeltandcrystal.TheconcentrationofthePhosphorousinthemeltandcrystalTheconcentrationoftheCarboninthemeltandcrystalFEMAGSoft©2012CRYSTALRADIALOXYGENMEASUREMENTPOSITIONSFEMAGSoft©2011PREDICTIONOFRADIALOXYGENCONCENTRATION00,020,040,060,080,10,12012345678RadialOxygenConcentrationH=90mmCUSPNoCUSPRadius(m)Oxygenppma00,020,040,060,080,10,120123456789RadialOxygenConcentrationH=250mmCUSPNoCUSPRadius(m)Oxygenppma00,020,040,060,080,10,120123456789RadialOxygenConcentrationH=430mmCUSPNoCUSPRadius(m)Oxygenppma00,020,040,060,080,10,120123456789RadialOxygenConcentrationH=640mmCUSPNoCUSPRadius(m)OxygenppmaFEMAGSoft©2012PREDICTIONOFRADIALOXYGENCONCENTRATION00,020,040,060,080,10,12012345678RadialOxygenConcentratioH=840mmCUSPNoCUSPRadius(m)Oxygenppma00,020,040,060,080,10,12012345678RadialOxygenConcentrationH=1070CUSPNoCUSPRadius(m)Oxygenppma00,020,040,060,080,10,12012345678RadialOxygenConcentrationH=1290mmCUSPNoCUSPRadius(m)Oxygenppma00,020,040,060,080,10,12012345678RadialOxygenConcentrationH=1550mmCUSPNoCUSPRadius(m)OxygenppmaFEMAGSoft©2012PREDICTIONOFOXYGENCONCENTRATIONALONGTHEHEIGHTOFTHECRYSTAL0,20,40,60,811,21,41,60123456789OxygenConcentrationvariationinaVerticalDirectionCUSPNoCUSPHeight(m)OxygenppmaFEMAGSoft©2012PREDICTIONOFCARBONCONCENTRATIONALONGTHEHEIGHTOFTHECRYSTALFEMAGSoft©2012PREDICTIONOFPHOSPHOROUSCONCENTRATIONALONGTHEHEIGHTOFTHECRYSTALFEMAGSoft©2012CUSPvsNOCUSP-OXYGENCONCENTRATION-CRYSTALFEMAGSoft©2012CUSPvsNOCUSP-CARBONCONCENTRATION-CRYSTALFEMAGSoft©2012CUSPvsNOCUSP-PHOSPHOROUSCONCENTRATION-CRYSTALFEMAGSoft©2011CUSPvsNOCUSP-PHOSPHORUSRESISTIVITY-CRYSTALFEMAGSoft©2011PREDICTIONOFRADIALPHOSPHORUSRESISTIVITYFEMAGSoft©2012NOCUSPVSCUSPTEMPERATUREINTHEMELTAnimation–Temperature-melt.aviFEMAGSoft©2012NOCUSPvsCUSP–MELTTURBULENTVISCOSITYAnimation–Turbulentviscosity-melt.aviFEMAGSoft©2012NOCUSPvsCUSP-VELOCITY&STREAMFUNCTIONAnimation-psi-melt.aviFEMAGSoft©2012NOCUSPvsCUSP-OXYGENINTHEMELTAnimation-Oxygen-melt.aviFEMAGSoft©2012NOCUSPvsCUSP-PHOSPHOROUSINTHEMELT-1Animation-Phosphorous-melt.aviFEMAGSoft©2012NOCUSPvsCUSP-PHOSPHOROUSINTHEMELT-2Animation-Phosphorous-melt2.aviFEMAGSoft©2012NOCUSPvsCUSP-CARBONINTHEMELT-1Animation-Carbon-melt.aviFEMAGSoft©2012NOCUSPvsCUSP-CARBONINTHEMELT-2Animation-Carbon-melt2.aviFEMAGSoft©2012NOCUSPvsCUSP-OXYGENINTHECRYSTALAnimation-Oxygen-ppm.aviFEMAGSoft©2012NOCUSPvsCUSP-PHOSPHOROUSINTHECRYSTALAnimation-Phosphorous-cry.aviFEMAGSoft©2012CUSPvsNOCUSP-PHOSPHOROUSRESISTIVITY-CRYSTALAnimation–Phos-resistivity.aviFEMAGSoft©2012NOCUSPvsCUSP-CARBONINTHECRYSTALAnimation-Carbon-ppm.aviFEMAGSoft©2012EFFECTOFACUSPMAGNETICFIELDONOXYGENCONCENTRATIONThefollowingobservationscanbedrawn:Withacuspmagneticfield,theoveralloxygenconcentrationinthecrystaldecreasesstronglyThisiseffectismoreimportantinthelowerpartofthecrystal,whereoxygenconcentrationdecreasesfromabout7ppmadownto3ppmaThisloweroxygenconcentrationistheresultof:-astrongerturbulenteffect(seetheturbulentviscosity)belowthesolid/liquidinterfacewhennocuspfieldisapplied,therebyfacilitatingthetransferofoxygenfromthebottomofthemelttowardsthesolid-liquidinterface;-alowertemperaturealongthebottomofthecruciblewhenacuspfieldisapplied,leadingtoaloweroxygendissolutioninthisregion;thislowertemperatureappearsasanadditionalconsequenceofthelowermeltflowturbulence,theassociatedheattransferreduction,andtheresultingcoolingdownofthebottomofthemeltFEMAGSoft©2012EFFECTOFACUSPMAGNETICFIELDONOXYGENCONCENTRATION(continued)Thisloweroxygenconcentrationistheresultof:-adifferentflowconfiguration:withacuspfield,themainflowcell(alsocalledaProudmancell)extendsfartherfromtheaxisandclosertothemelt/gasinterface,therebyfacilitatingoxygenevaporation,whilewithoutcuspfieldthemainflowcellremainslocatedunderthesolid/liquidinterfaceTheradialsegregationisnotverydifferentwithorwithoutcuspfield,showingastrongradialsegregationclosetothecrystalwallinbothcases,asaconsequenceofthestrongoxygenevaporationprevailingnearthetri-junctionFEMAGSoft©2012EFFECTOFACUSPMAGNETICFIELDONCARBONCONCENTRATIONThefollowingobservationscanbedrawn:ThereisverylittledifferenceincarbonconcentrationwithorwithoutamagneticfieldThecarbonconcentrationisalmostuniforminthemelt,whetherornotacuspfieldisapplied.ThisconcentrationincreasessteadilyasaconsequenceofthesegregationeffecttakingplacealongthesolidificationinterfaceFEMAGSoft©2012EFFECTOFACUSPMAGNETICFIELDONPHOSPHORUSCONCENTRATIONThefollowingobservationscanbedrawn:ThereisverylittledifferenceinphosphorusconcentrationwithorwithoutamagneticfieldOurmodelconsidersphosphorusevaporationatthemelt/gasinterface.However,thiseffec
本文标题:CUSP磁场对8英寸半导体级硅晶体生长的影响(全球半导体晶体生长模拟著名商业软件FEMAG)
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