PLASMA原理

PLASMACLEANING原理简介PresentedbyChaoFang目录Agenda•等离子技术在高级封装工业的应用ApplicationofPlasmaTechnologyinAdvancedPackagingIndustries.•等离子技术简介IntroductiontoPlasmaTechnology综述Overview:•微电子工业MicroelectronicIndustry–Flash,EEPROM–DRAM,SRAM–Analog/Linear–Microcontrollers,Microprocessors,Microperipherals–ASIC•光电子工业OptoelectronicIndustry–LaserDiodes–FiberAssembly–HermeticPackaging–MEMS•印刷电路工业PrintedCircuitIndustry–PrintedCircuitBoard集成电路封装面临的挑战ICAssemblyandPackaging:SpecificChallenges•不良的芯片粘结PoorDieAttach–InsufficientHeatDissipationDuetoPoorDieAttach•不良的导线连接强度PoorWireBondStrength–ContaminationonBondPad•覆晶填料FlipChipUnderfill–FilletHeightofUnderfill–VoidinFlipChipUnderfill•剥离Delamination–LaminateMaterialsReleasingMoisture–MetalLeadframeOxidation•印刷电路板孔中的残余物SmearinginPrintedCircuitBoards•打印记号Marking等离子体应用PlasmaApplications•表面污染物去除ContaminationRemoval–WireBonding–Encapsulation–BallAttach(ContaminationSources:Fluorine,NickelHydroxide,Photoresist,EpoxyPaste,OrganicSolventResidue,smearinPCB,andscum)•表面活化SurfaceActivation–DieAttach–Encapsulation–FlipChipUnderfill–Marking•表面改性和刻蚀SurfaceModificationandEtch–FluxlessSoldering–Claddinglayerremovalonfiber機台型別:站別:2700(PLASMA)機台廠牌:ASE機台型別:JASON701WhatisPlasma一.何谓“电浆”?物质形态：固体、液体、气体、电浆所谓电浆，即是包含离子电子与中性粒子或部分游离的气体。(PartiallyIonizedGas)。里面的组成由各种带电荷的电子，离子(Ion)及不带电的激发态分子和原子团(Radicals)、自由基、紫外线等。NebulaLightningVolcanoMagneticFusingReactorFluorescentLampNeonlight电浆的形式有自然电浆（如北极光，星云，太阳核，闪电）及人造（如电虹灯，火焰喷射器，日光灯，半导体制程的溅渡，半导体制程的干蚀刻，半导体封装制程的电浆清洗。自然的电浆(RForACplasma)射頻或交流电浆(RForACplasma)cathodecathodeanodeanodeAC+_VACUUMPUMPGAS:Are-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-+++++++++++++++++++(RForACplasma)射頻或交流电浆(RForACplasma)cathodecathodeanodeanodeAC+_VACUUMPUMPGAS:Are-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-++++++++++++++++++++++++++++++++++++++++++++++++++++++++微波電漿(MWplasma)微波电浆(MWplasma)MWVACUUMPUMPGAS:Ar,O2e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-+++++++++++++++++++微波電漿(MWplasma)微波电浆(MWplasma)MWVACUUMPUMPGAS:Ar,O2e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-e-++++++++++++++++++++++++++++++++++++++++++++++++++++++++电浆的产生是利用直流，交流，射射频或微波能源的方式，在适当的低压状态（约100mTorr至1Torr(1atm=760Torr)及密闭空间通以电源（12ev)，将通入密闭空间之气体离子化，产生气态之粒子；利用离子化之粒子及借由极板所提供之电场，加速粒子间之撞击作用。而经由撞击产生之二次电子与通入密闭空间之气态粒子，尤其是不带电荷的气体分子及原子团再次发生撞击。在撞击之间便产生了电浆及火光。而经由撞击之电子与粒子相结合而变成原子团。人工的电浆等离子体的组成ComponentsofaPlasma•电子Electrons•离子Ions–Positive•Ar+e-Ar++2e-–Negative•Cl2+2e-2Cl-•自由基FreeRadicals:–CH4+e-.CH3+.H+e-•光子Photons–Ar+e-Ar*+e-Ar+e-+hn•中性粒子NeutralsPLASMA作用原理說明PlasmawithRF产生方式如图将电极板施以13.56MHZ之交流电源，电子在两极板间加速而获得能量，此高能量之电子撞击反应气体分子（如Ar,H2）而产生离子，原子，自由基，电子等。在电浆对有机污染物之清除方法有二：化学反应：利用氧原子或氢原子与污染物相结合方式，来达成电浆处理物理反应：利用正离子撞击方式如氩气，使含C-H键之污染物脱离而达成清除之目的。电浆处理过程中，影响最大因素为反应温度。是由电力，密度，压力及处理时间所决定。气体的流量影响蚀刻速率及反应时间，可用以下公式来计算：R=(P*V)/rP:压力（Torr）R:停滞时间，单位为秒V:反应室之体积（liter)。r:填充气体之流速（每秒通过的Torr-liter)。当一种气体渗入一种或多种额外气体时，这些元素的混合气体组合，能产生所希望的蚀刻与清洗效果。常用的气体则有氧气，氢气，四氟化碳，氩气及氦气。PlasmaProperties特性GasandConcentration借电浆中的离子或高活性原子，将表面污染物撞离或形成挥发性气体，再经由真空系统带走，达到表面清洁的目的。物理性電漿清洗(PPC)離子轟擊GAS:Ar揮發性、飄浮性之小型汙染物GASES:Ar,O2CO2&H2OORGANICTHINFILM被清潔物表層化學性電漿清洗(PCC)高活性原子反應ORGANICTHINFILM被清潔物表層CmHn&H2O化學性電漿清洗(PCC)高活性原子反應ORGANICTHINFILM被清潔物表層GASES:Ar,H2氩离子溅射(ARGONSPUTTERING)一以氩离子利用电浆与基板问的电位差，高速撞击基板。一以撞击动力溅射掉污染物，或将碳氢污染物化学键裂解，形成气体挥发。一可溅射清除金属氧化膜。Ar―(Ar+)离子撞击氢气电浆气体还原(HYDROGENREDUCTION)一以激发态自由基氢气裂解碳气污染物及还原金属氧化膜。H2―CxHy+H2–→CxH(y+2)―2P+3H2–→2PH3―Oxide+H2–→H2O氧离子烧除(OXYGENASHING)一利用高能量的氧离子在低温下烧除碳氢污染物。一烧除效率高但无法去除金属氧化膜反而会产生金属氧化膜。O2―C+O2–→CO2―CxHy+O2–→CO2+H2O―Oxide+O2–→noreaction反应机构物理化学化学ArgonPlasmaPhysicalProcessSputteringAr++ArO..OCOOOxygenPlasmaChemicalProcessOrganicRemovalHydrogenPlasmaChemicalProcessOxideRemovalH.H.HHOOOHH.H.H..Ar+ArgonPlasmaPhysicalProcessSputteringAr++ArO..OCOOOxygenPlasmaChemicalProcessOrganicRemovalHydrogenPlasmaChemicalProcessOxideRemovalH.H.HHOOOHH.H.H..Ar+ArgonPlasmaPhysicalProcessSputteringAr++ArO..OCOOOxygenPlasmaChemicalProcessOrganicRemovalHydrogenPlasmaChemicalProcessOxideRemovalH.H.HHOOOHH.H.H..Ar+PLASMA作用原理說明PlasmawithRFclean原理Plasmaclean一般常用之气体为O2及Ar，其反應式如下：A:H*+有机物CxH(y+2)B:Ar*+有机物小且轻的有机物对Wirebondingstrength而言，如铝垫在制程、运送或处理过程中受到污染。此污染物为有机物，则可以以A式之化学反应或B式之物理反应將污染物清除。若污染物為非有机物，可由B式之物理反应將污染物清除。DIwateruntreatedpolymer,highcontactangleplasmatreatedpolymer,lowcontactangle检验被清洁物表面之清洁度(DI水为易取得、低污染及极性(POLAR)极佳之液体，被清洁物清洗前后以水滴检验，角度变化最明显，最易判别)ASESHSPEC:10~40水滴角检验020406080beforeplasmaafterplasmaWaterAngle水滴角度S.F.E.(表面自由能)PolarDisperse水滴角检验使用仪器电浆清洗流程示意图1.TYPICALPROCESS(BGA)D/AEPOXYCURIPLASMAW/BMOLDIPLASMAMARCHPX-1000E&RPlasmax-800Panasonic32/30TEPLA4002.TYPICALPROCESS(LEADFRAM)D/AEPOXYCURIPLASMAW/BMOLDITEPLA400JASON0701Panasonic30Thankyou!!!