AO4410中文资料

SymbolVDSVGSIDMTJ,TSTGSymbolTypMax31405975RθJL1624WJunctionandStorageTemperatureRangeAPD°C32.1-55to150TA=70°CIDContinuousDrainCurrentAMaximumUnitsParameterTA=25°CTA=70°C30MaximumJunction-to-AmbientASteady-State181580°C/WAbsoluteMaximumRatingsTA=25°CunlessotherwisenotedVV±12PulsedDrainCurrentBPowerDissipationTA=25°CGate-SourceVoltageDrain-SourceVoltageMaximumJunction-to-LeadCSteady-State°C/WThermalCharacteristicsParameterUnitsMaximumJunction-to-AmbientAt≤10sRθJA°C/WAO4410N-ChannelEnhancementModeFieldEffectTransistorFeaturesVDS(V)=30VID=18A(VGS=10V)RDS(ON)5.5mΩ(VGS=10V)RDS(ON)6.2mΩ(VGS=4.5V)GeneralDescriptionTheAO4410usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),shoot-throughimmunity,bodydiodecharacteristicsandultra-lowgateresistance.ThisdeviceisideallysuitedforuseasalowsideswitchinNotebookCPUcorepowerconversion.StandardproductAO4410isPb-free(meetsROHS&Sony259specifications).AO4410LisaGreenProductorderingoption.AO4410andAO4410Lareelectricallyidentical.SOIC-8GSSSDDDDGDSAlpha&OmegaSemiconductor,Ltd.AO4410SymbolMinTypMaxUnitsBVDSS30V0.0051TJ=55°C5IGSS100nAVGS(th)0.81.11.5VID(ON)80A4.75.5TJ=125°C6.47.45.26.2mΩgFS102SVSD0.641VIS4.5ACiss913010500pFCoss625pFCrss387pFRg0.40.5ΩQg(4.5V)72.485nCQgs13.4nCQgd16.8nCtD(on)1115nstr711nstD(off)99135nstf1319.5nstrr3340nsQrr22.230nCTHISPRODUCTHASBEENDESIGNEDANDQUALIFIEDFORTHECONSUMERMARKET.APPLICATIONSORUSESASCRITICALCOMPONENTSINLIFESUPPORTDEVICESORSYSTEMSARENOTAUTHORIZED.AOSDOESNOTASSUMEANYLIABILITYARISINGOUTOFSUCHAPPLICATIONSORUSESOFITSPRODUCTS.AOSRESERVESTHERIGHTTOIMPROVEPRODUCTDESIGN,FUNCTIONSANDRELIABILITYWITHOUTNOTICE.BodyDiodeReverseRecoveryTimeBodyDiodeReverseRecoveryChargeIF=18A,dI/dt=100A/µsDrain-SourceBreakdownVoltageOnstatedraincurrentID=250µA,VGS=0VVGS=4.5V,VDS=5VVGS=10V,ID=18AReverseTransferCapacitanceIF=18A,dI/dt=100A/µsElectricalCharacteristics(TJ=25°Cunlessotherwisenoted)STATICPARAMETERSParameterConditionsIDSSµAGateThresholdVoltageVDS=VGSID=250µAVDS=24V,VGS=0VVDS=0V,VGS=±12VZeroGateVoltageDrainCurrentGate-BodyleakagecurrentRDS(ON)StaticDrain-SourceOn-ResistanceForwardTransconductanceDiodeForwardVoltageMaximumBody-DiodeContinuousCurrentInputCapacitanceOutputCapacitanceDYNAMICPARAMETERSmΩVGS=4.5V,ID=15AIS=1A,VGS=0VVDS=5V,ID=18ATurn-OnRiseTimeTurn-OffDelayTimeVGS=10V,VDS=15V,RL=0.83Ω,RGEN=3ΩTurn-OffFallTimeTurn-OnDelayTimeGateDrainChargeVGS=0V,VDS=15V,f=1MHzSWITCHINGPARAMETERSTotalGateChargeGateSourceChargeGateresistanceVGS=0V,VDS=0V,f=1MHzVGS=10V,VDS=15V,ID=18AA:ThevalueofRθJAismeasuredwiththedevicemountedon1in2FR-4boardwith2oz.Copper,inastillairenvironmentwithTA=25°C.Thevalueinanygivenapplicationdependsontheuser'sspecificboarddesign.Thecurrentratingisbasedonthet≤10sthermalresistancerating.B:Repetitiverating,pulsewidthlimitedbyjunctiontemperature.C.TheRθJAisthesumofthethermalimpedencefromjunctiontoleadRθJLandleadtoambient.D.ThestaticcharacteristicsinFigures1to6areobtainedusing80µspulses,dutycycle0.5%max.E.Thesetestsareperformedwiththedevicemountedon1in2FR-4boardwith2oz.Copper,inastillairenvironmentwithTA=25°C.TheSOAcurveprovidesasinglepulserating.Rev4:May2005Alpha&OmegaSemiconductor,Ltd.AO4410TYPICALELECTRICALANDTHERMALCHARACTERISTICSFUNCTIONSANDRELIABILITYWITHOUTNOTICE.0102030405060012345VDS(Volts)Fig1:On-RegionCharacteristicsID(A)VGS=2V2.5V10V010203040506000.511.522.5VGS(Volts)Figure2:TransferCharacteristicsID(A)4.04.55.05.56.00102030405060ID(A)Figure3:On-Resistancevs.DrainCurrentandGateVoltageRDS(ON)(mΩ)1.0E-051.0E-041.0E-031.0E-021.0E-011.0E+001.0E+011.0E+020.00.20.40.60.81.0VSD(Volts)Figure6:Body-DiodeCharacteristicsIS(A)25°C125°C0.811.21.41.60255075100125150175Temperature(°C)Figure4:On-Resistancevs.JunctionTemperatureNormalizedOn-ResistanceVGS=10VVGS=4.5V04812160246810VGS(Volts)Figure5:On-Resistancevs.Gate-SourceVoltageRDS(ON)(mΩ)25°C125°CVDS=5VVGS=4.5VVGS=10VID=18A25°C125°CID=18AAlpha&OmegaSemiconductor,Ltd.AO4410TYPICALELECTRICALANDTHERMALCHARACTERISTICSFUNCTIONSANDRELIABILITYWITHOUTNOTICE.0123450102030405060708090Qg(nC)Figure7:Gate-ChargeCharacteristicsVGS(Volts)100100010000100000051015202530VDS(Volts)Figure8:CapacitanceCharacteristicsCapacitance(pF)Ciss0204060801000.0010.010.11101001000PulseWidth(s)Figure10:SinglePulsePowerRatingJunction-to-Ambient(NoteE)Power(W)0.010.11100.000010.00010.0010.010.11101001000PulseWidth(s)Figure11:NormalizedMaximumTransientThermalImpedanceZθJANormalizedTransientThermalResistanceCossCrss0.11.010.0100.00.1110100VDS(Volts)ID(Amps)Figure9:MaximumForwardBiasedSafeOperatingArea(NoteE)100µs10ms1ms0.1s1s10sDCRDS(ON)limitedTJ(Max)=150°CTA=25°CVDS=15VID=18ASinglePulseD=Ton/TTJ,PK=TA+PDM.ZθJA.RθJARθJA=40°C/WTonTPDIndescendingorderD=0.5,0.3,0.1,0.05,0.02,0.01,singlepulseTJ(Max)=150°CTA=25°C10µsAlpha&OmegaSemiconductor,Ltd.