SST29VF020-70-4I-NHE中文资料

©2005SiliconStorageTechnology,Inc.S71160-13-00010/061TheSSTlogoandSuperFlashareregisteredtrademarksofSiliconStorageTechnology,Inc.SSFisatrademarkofSiliconStorageTechnology,Inc.Thesespecificationsaresubjecttochangewithoutnotice.DataSheet2Mbit/4Mbit(x8)Small-SectorFlashSST29SF020/SST29SF040SST29VF020/SST29VF040FEATURES:•Organizedas256Kx8/512Kx8�SingleVoltageReadandWriteOperations–4.5-5.5VforSST29SF020/040–2.7-3.6VforSST29VF020/040�SuperiorReliability–Endurance:100,000Cycles(typical)–Greaterthan100yearsDataRetention�LowPowerConsumption:–ActiveCurrent:10mA(typical)–StandbyCurrent:30µA(typical)forSST29SF020/0401µA(typical)forSST29VF020/040�Sector-EraseCapability–Uniform128Bytesectors�FastReadAccessTime:–55nsforSST29SF020/040–70nsforSST29VF020/040�LatchedAddressandData�FastEraseandByte-Program:–Sector-EraseTime:18ms(typical)–Chip-EraseTime:70ms(typical)–Byte-ProgramTime:14µs(typical)–ChipRewriteTime:4seconds(typical)forSST29SF/VF0208seconds(typical)forSST29SF/VF040�AutomaticWriteTiming–InternalVPPGeneration�End-of-WriteDetection–ToggleBit–Data#Polling�TTLI/OCompatibilityforSST29SF020/040�CMOSI/OCompatibilityforSST29VF020/040�JEDECStandard–FlashEEPROMPinoutsandcommandsets�PackagesAvailable–32-leadPLCC–32-leadTSOP(8mmx14mm)�Allnon-Pb(lead-free)devicesareRoHScompliantPRODUCTDESCRIPTIONTheSST29SF020/040andSST29VF020/040are256Kx8/512Kx8CMOSSmall-SectorFlash(SSF)manufac-turedwithSST’sproprietary,high-performanceCMOSSuperFlashtechnology.Thesplit-gatecelldesignandthick-oxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateapproaches.TheSST29SF020/040deviceswrite(ProgramorErase)witha4.5-5.5Vpowersupply.TheSST29VF020/040deviceswrite(ProgramorErase)witha2.7-3.6Vpowersupply.ThesedevicesconformtoJEDECstandardpinassignmentsforx8memories.FeaturinghighperformanceByte-Program,theSST29SF020/040andSST29VF020/040devicespro-videamaximumByte-Programtimeof20µsec.Toprotectagainstinadvertentwrite,theyhaveon-chiphardwareandSoftwareDataProtectionschemes.Designed,manufac-tured,andtestedforawidespectrumofapplications,thesedevicesareofferedwithaguaranteedenduranceofatleast10,000cycles.Dataretentionisratedatgreaterthan100years.TheSST29SF020/040andSST29VF020/040devicesaresuitedforapplicationsthatrequireconvenientandeco-nomicalupdatingofprogram,configuration,ordatamem-ory.Forallsystemapplications,theysignificantlyimproveperformanceandreliability,whileloweringpowerconsump-tion.TheyinherentlyuselessenergyduringEraseandProgramthanalternativeflashtechnologies.Thetotalenergyconsumedisafunctionoftheappliedvoltage,cur-rent,andtimeofapplication.Sinceforanygivenvoltagerange,theSuperFlashtechnologyuseslesscurrenttopro-gramandhasashortererasetime,thetotalenergycon-sumedduringanyEraseorProgramoperationislessthanalternativeflashtechnologies.Theyalsoimproveflexibilitywhileloweringthecostforprogram,data,andconfigurationstorageapplications.TheSuperFlashtechnologyprovidesfixedEraseandPro-gramtimesindependentofthenumberofErase/Programcyclesthathaveoccurred.Therefore,thesystemsoftwareorhardwaredoesnothavetobemodifiedorde-ratedasisnecessarywithalternativeflashtechnologies,whoseEraseandProgramtimesincreasewithaccumulatedErase/Pro-gramcycles.Tomeethighdensity,surfacemountrequirements,theSST29SF020/040andSST29VF020/040devicesareofferedin32-leadPLCCand32-leadTSOPpackages.ThepinassignmentsareshowninFigures2and3.SST29SF/VF020/0402Mb/4Mb(x8)Byte-Program,Small-Sectorflashmemories2DataSheet2Mbit/4MbitSmall-SectorFlashSST29SF020/SST29SF040SST29VF020/SST29VF040©2005SiliconStorageTechnology,Inc.S71160-13-00010/06DeviceOperationCommandsareusedtoinitiatethememoryoperationfunc-tionsofthedevice.Commandsarewrittentothedeviceusingstandardmicroprocessorwritesequences.Acom-mandiswrittenbyassertingWE#lowwhilekeepingCE#low.TheaddressbusislatchedonthefallingedgeofWE#orCE#,whicheveroccurslast.ThedatabusislatchedontherisingedgeofWE#orCE#,whicheveroccursfirst.ReadTheReadoperationoftheSST29SF020/040andSST29VF020/040devicesarecontrolledbyCE#andOE#,bothhavetobelowforthesystemtoobtaindatafromtheoutputs.CE#isusedfordeviceselection.WhenCE#ishigh,thechipisdeselectedandonlystandbypoweriscon-sumed.OE#istheoutputcontrolandisusedtogatedatafromtheoutputpins.ThedatabusisinhighimpedancestatewheneitherCE#orOE#ishigh.RefertotheReadcycletimingdiagraminFigure4forfurtherdetails.Byte-ProgramOperationTheSST29SF020/040andSST29VF020/040devicesareprogrammedonabyte-by-bytebasis.Beforeprogram-ming,thesectorwherethebyteexistsmustbefullyerased.TheProgramoperationisaccomplishedinthreesteps.Thefirststepisthethree-byteloadsequenceforSoftwareDataProtection.Thesecondstepistoloadbyteaddressandbytedata.DuringtheByte-Programoperation,theaddressesarelatchedonthefallingedgeofeitherCE#orWE#,whicheveroccurslast.Thedataislatchedontheris-ingedgeofeitherCE#orWE#,whicheveroccursfirst.ThethirdstepistheinternalProgramoperationwhichisiniti-atedaftertherisingedgeofthefourthWE#orCE#,which-everoccursfirst.TheProgramoperation,onceinitiated,willbecompleted,within20µs.SeeFigures5and6forWE#andCE#controlledProgra