氮化铝陶瓷直接覆铜技术

©1994-2010ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.(43,230031):AlNAlN,10631070,,AlN85312Pa,011015mm,50mm50mm:;;;:TN45:B:100122028(1999)0520031-01AlN(DirectlyBoundedCop2per,DBC),AlNAlN2DBCAlN,,GTGIG2BTDCöDC,,,1DBC,Al2O3N2,1063,CuAl2O3,CuOCu2OCuAl2O3,Al2O3,Cu(AlO2)2Cu(AlO2),,AlN,Al2O32DBC,:AlN2DBC:AlNAl2OCu2OCuAl2O32DBC:Al2O3Cu2OCu2AlN2DBC:(1)AlN(2)(3)(1)(2),(3)43SD5115AlNT2AlN:,10501075,30minCuAlN,,106310700151h,AlN2DBC3311AlN2DBC,50mm50mm,011015mm,170Wö(mK),85312Pa,2455,312AlN,,90010001200,AlN02h,,;,;10501075,30min,,,23Lm11075,30minAlN,AlNAl2O3,Cu10631070,0151h,2AlN2DBC,AlNCu,Cu2AlN,CuAlND-6000AlN2DBC,CuAlN(3),2(),PHILIPSXL30AlNCuAlCu,AlNAlCu,CuCuAlN,(23Lm)CuAlN,AlN313,(33):1999206201:1999206225:(1963-),,,43,,13199910©1994-2010ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.(3)33311PINPIN,l=l2-l1,011mm,l=(l2-011)-(l1+011)=l-012mml=(l2+011)-(l1-011)=l+012mm,PIN012mm916GHz,012615312,LR(4)(5)L=210-4l[ln(4löd)+015döl-0175](4)R=RSlö(Pd)(5):l;d;RSHMICd=01025mm,l=018mm,RS=01038,(4)(5),L=0166nH,R=0138IL(6)IL=1+(RöZ0)+0125(RöZ0)2+0125(XöZ0)2(6):X,IL=0166dB,31331311PINPIN,0103mm,231312,LR,012dB,4HMIC,31310,22öGHz91210139171013ödB99118118ödB2021(rms)ö()31112522215245490818010ödB018018:1BahlIJ,BhartiaP.M..:SSS,1991.551554.(:)(31)(1)Cu,;(2);(3),:5,431AIN2AIN2DBC3AIN2DBC:1SethGreiner,AlKunt.Selectingasubstratetechnologyforpow2erhybridapplicationsJ.ElectronPackgProd,1992,32(5):5457.2PaikKyungW,NengtbanerConstantineA.DirectbondingofcoppertoaluminumnitridesubstratesP.USP5418002,1995205223.3KuzelR,SchejbalJ,MatejkaM.Newtrendsinpowermicroelec2tronicsDCBpackagesJ.HybridCircuits,1992,(28):68.(:)33199910©1994-2010ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.(ShenzhenWanjieCapacitorsCo.,Ltd,ShenzhenGangdong518004),ZHUXu2fei,LIULin(NanjingUniversityofScienceandTechnology,NanjingJiangsu210094)ELECTRONICCOMPONENTS&MATERIALS(China),Vol.18,No.5,P.24226(Oct.1999).InChinese.SomeofthedisadvantagesofthetraditionalagingtechnologyareanalyzedAgingmayresumecapacitors’inherentelectricproperties.Theeffectofag2ingtimeandtemperatureontheelectricpropertiesisdiscussedandanewhigh2speedagingtechnologyispresented,whichreducestheagingtimetothreehours.Electrolyteofhighqualityisthepreconditionofhigh2speedaging.(5refs.)Keywordselectrolyticcapacitors;agingtechnology;electrolyte;leakagecurrent;reliability;loadlifeChinamadeformedfoilsforlowvoltageapplication.CHENMing2tao(XiamenOverseasChineseElectronicsCo.,Ltd.,XiamenFujian361006)ELECTRONICCOMPONENTS&MATERIALS(China),Vol.18,No.5,P.27228(Oct.1999).InChinese.Atpresent,mostfoilscomefromabroad,especiallythoseforlowvoltageapplication.Byadjustingproductiontechnology,somelowvoltageelectrolyticcapacitorsweresuccessfullydevelopedwithChinamadefoils.TheexperiencesoftrialproductionandbatchproductionshowthatChainmadefoilsof13mmormore,25Vand35Varereliable.(norefs.)Keywordslowvoltage;formedfoils;rivetingquality;agingtechnologyX9313nonvolatiledigitalpotentiometeranditsapplication.CHENGYong,WANGYu2mei(WeifangInstitute,WeifangShandong261041).ELECTRONICCOMPONENTS&MATERIALS(China),Vol.18,No.5,P.29230(Oct.1999).InChinese.X9313consistsofacontrolcircuit,a52digitalbinaryreversiblecounter,adecoder,a52digitalE2PROMandaresistorarray.Itcanbeusedinchipmicrocomputers,orinthecenterfrequencycircuitofphase2lockloopinthenon2chip2microcomputers.(2refs.)Keywordsdigitalpotentiometers;resistors;phase2lockloopTechnologyfordirectlybondingcopperonAIN.HUANGAn2bing,CUISongZHANGHao(The43rdInstitute,ChinaMinistryofInformationIndus2try,HefeiAnhui230031).ELECTRONICCOMPONENTS&MATERIALS(China),Vol.18,No.5,P.31,33(Oct.1999).InChinese.Directlybondingcopper(DBC)onAINsubstrateisanewtechnologybasedonthetechnologyfordirectlybondingcopperonAl2O3substrates.WhenAINsubstratessurfaceispre2oxidized,inthenitrogenatmosphere,at10631070,copperfoilmaynaturallyformedontheAINsubstrates.Thepeelstrengthisupto85312Pa,thickness011015mmandthemaximumsubstratesarea50mm50mm.(3refs.)KeywordsAIN;AIN2DBC;transitionlayer;surfacefinishX-bandfive-bitphaseshifterandlowpowerswitchHMIC.XIEYu(NanjingResearchInstituteofElectronicTechnology,NanjingJinangshu210013)ELECTRONICCOMPONENTS&MATERIALS(China),Vol118,No15,P132233(Oct.1999).InChinese.TheX2bandfive2digitphaseshifterandlowpowerswitchHMICaremadethroughthemanufacturetechnologyofhybridmicrowavepackage.Thede2signandtechnologyarepresented.Theeffectofthemanufacturetechnologyontheperformanceoftheshifterisanalyzed.(1ref.)Keywordsphaseshifters;lowpowerswitch;manufacturetechnologyNewbatteriesinChina.GAOZong2ming(ChengduHuaxiInstituteofElectromechanicalAppliances,ChengduSichuan610041).ELECTRONICCOMPONENTS&MATERIALS(China),Vol.18,No.5,P.35236(Oct.1999).InChinese.Quantitatively,Chinaproducesmostbatteriesintheworldbutamongthem90%areoflowgrade.However,intherecenttenyears,Chinamadenewbatteriescometothemarket.Amongthem,ther