FDS9435A中文资料

May1999FDS9435ASingleP-ChannelEnhancementModeFieldEffectTransistorGeneralDescriptionFeaturesAbsoluteMaximumRatingsTA=25oCunlessotherwisenotedSymbolParameterFDS9435AUnitsVDSSDrain-SourceVoltage-30VVGSSGate-SourceVoltage-20VIDDrainCurrent-Continuous(Note1a)-5.3A-Pulsed-50PDMaximumPowerDissipation(Note1a)2.5W(Note1b)1.2(Note1c)1TJ,TSTGOperatingandStorageTemperatureRange-55to150°CTHERMALCHARACTERISTICSRθJAThermalResistance,Junction-to-Ambient(Note1a)50°C/WRθJCThermalResistance,Junction-to-Case(Note1)25°C/WFDS9435ARev.C-5.3A,-30V, RDS(ON)=0.045Ω@VGS=-10V,RDS(ON)=0.075Ω@VGS=-4.5V.HighdensitycelldesignforextremelylowRDS(ON).Highpowerandcurrenthandlingcapabilityinawidelyusedsurfacemountpackage.SOT-23SuperSOTTM-8SOIC-16SO-8SOT-223SuperSOTTM-6SO-8P-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild'sproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistanceandprovidesuperiorswitchingperformance.Thesedevicesareparticularlysuitedforlowvoltageapplicationssuchasnotebookcomputerpowermanagementandotherbatterypoweredcircuitswherefastswitching,lowin-linepowerloss,andresistancetotransientsareneeded.SDSSSO-8DDDGpin1FDS9435A56831742©1999FairchildSemiconductorCorporationElectricalCharacteristics(TA=25OCunlessotherwisenoted)SymbolParameterConditionsMinTypMaxUnitsOFFCHARACTERISTICSBVDSSDrain-SourceBreakdownVoltageVGS=0V,ID=-250µA-30VΔBVDSS/ΔTJBreakdownVoltageTemp.CoefficientID=-250µA,Referencedto25oC-25mV/oCIDSSZeroGateVoltageDrainCurrentVDS=-24V,VGS=0V-1µAIGSSFGate-BodyLeakage,ForwardVGS=20V,VDS=0V-100nAIGSSRGate-BodyLeakage,ReverseVGS=-20V,VDS=0V-100nAONCHARACTERISTICS(Note2)VGS(th)GateThresholdVoltageVDS=VGS,ID=-250µA-1-1.5-3VΔVGS(th)/ΔTJGateThresholdVoltageTemp.CoefficientID=-250µA,Referencedto25oC-3.2mV/oCRDS(ON)StaticDrain-SourceOn-ResistanceVGS=-10V,ID=-5.3A0.0350.045ΩTJ=125°C0.0520.072VGS=-4.5V,ID=-4.0A0.0590.075ID(ON)On-StateDrainCurrentVGS=-10V,VDS=-5V-25AgFSForwardTransconductanceVDS=-10V,ID=-4A9.5SDYNAMICCHARACTERISTICSCissInputCapacitanceVDS=-15V,VGS=0V,f=1.0MHz730pFCossOutputCapacitance400pFCrssReverseTransferCapacitance90pFSWITCHINGCHARACTERISTICS(Note2)tD(on)Turn-OnDelayTimeVDS=-10V,ID=-1A1120nstrTurn-OnRiseTimeVGS=-10V,RGEN=6Ω1018tD(off)Turn-OffDelayTime90125tfTurn-OffFallTime5580QgTotalGateChargeVDS=-10V,ID=-4A,1927nCQgsGate-SourceChargeVGS=-10V3.5QgdGate-DrainCharge3.6DRAIN-SOURCEDIODECHARACTERISTICSANDMAXIMUMRATINGSISMaximumContinuousDrain-SourceDiodeForwardCurrent-2.1AVSDDrain-SourceDiodeForwardVoltageVGS=0V,IS=-2.1A(Note2)-0.77-1.2VNotes:1.RθJAisthesumofthejunction-to-caseandcase-to-ambientthermalresistancewherethecasethermalreferenceisdefinedasthesoldermountingsurfaceofthedrainpins.RθJCisguaranteedbydesignwhileRθCAisdeterminedbytheuser'sboarddesign.Scale1:1onlettersizepaper2.PulseTest:PulseWidth300µs,DutyCycle2.0%.FDS9435ARev.Cc.125OC/Wona0.006in2padof2ozcopper.b.105OC/Wona0.04in2padof2ozcopper.a.50OC/Wona1in2padof2ozcopper.FDS9435ARev.C010203040500.511.522.53-I,DRAINCURRENT(A)DRAIN-SOURCEON-RESISTANCEV=-3.5VGSDR,NORMALIZEDDS(on)-10V-4.5V-4.0V-8.0V-5.0V-6.0VTypicalElectricalCharacteristicsFigure1.On-RegionCharacteristics.Figure2.On-ResistanceVariationwithDrainCurrentandGateVoltage.-50-2502550751001251500.60.811.21.41.6T,JUNCTIONTEMPERATURE(°C)DRAIN-SOURCEON-RESISTANCEJR,NORMALIZEDDS(ON)V=-10VGSI=-5.3ADFigure3.On-ResistanceVariationwithTemperature.024681001020304050-V,GATETOSOURCEVOLTAGE(V)-I,DRAINCURRENT(A)V=-5VDSGSDT=-55°CJ125°C25°CFigure5.TransferCharacteristics.00.20.40.60.811.21.40.00010.0010.010.111060-V,BODYDIODEFORWARDVOLTAGE(V)-I,REVERSEDRAINCURRENT(A)25°C-55°CV=0VGSSDST=125°CJFigure6.BodyDiodeForwardVoltageVariationwithSourceCurrentandTemperature.24681000.0250.050.0750.10.1250.150.1750.2-V,GATETOSOURCEVOLTAGE(V)GSR,ON-RESISTANCE(OHM)DS(ON)I=-2.7ADT=125°CJT=25°CJFigure4.On-ResistanceVariationwithGate-to-SourceVoltage.024681001020304050-V,DRAIN-SOURCEVOLTAGE(V)-I,DRAIN-SOURCECURRENT(A)DSD-4.5V-5.0V-4.0V-6.0V-3.5VV=-10VGS-7.0VFDS9435ARev.C051015200246810Q,GATECHARGE(nC)-V,GATE-SOURCEVOLTAGE(V)gGSV=-5VDS-10V-15VI=-5.3AD0.10.20.51251020500.010.1110100-V,DRAIN-SOURCEVOLTAGE(V)-I,DRAINCURRENT(A)RDS(ON)LIMITDDSAV=-10VSINGLEPULSER=125°C/WT=25°CθJAGSADC1s100ms10ms1ms10s100us0.00010.0010.010.111010030001020304050SINGLEPULSETIME(SEC)POWER(W)SINGLEPULSER=125°C/WT=25°CθJAAFigure10.SinglePulseMaximumPowerDissipation.0.10.31310305010020050010002000-V,DRAINTOSOURCEVOLTAGE(V)CAPACITANCE(pF)DSCissf=1MHzV=0VGSCossCrssFigure8.CapacitanceCharacteristics.Figure7.GateChargeCharacteristics.Figure9.MaximumSafeOperatingArea.TypicalElectricalCharacteristics(continued)0.00010.0010.010.11101003000.010.020.030.050.10.20.30.51t,TIME(sec)TRANSIENTTHERMALRESISTANCE1SinglePulseD=0.50.10.050.020.010.2DutyCycle,D=t/t12R(t)=r(t)*RR=125°C/WθJAθJAθJAT-T=P*R(t)θJAAJP(pk)t1t2r(t),NORMALIZEDEFFECTIVEFigure11.TransientThermalResponseCurve.ThermalcharacterizationperformedusingtheconditionsdescribedinNote1c.Transientthermalresponsewillchangedependingonthecircui