LED芯片制作

MOCVD实物图Hallmeasurement-720-3600360720(002):225arcsec(102)(102):256arcsec(002)ω(arcsec)强度计数位错密度：8×107/cm2。材料所的外延片通过对GaN的生长模式、光、电、结晶性能、缺陷和位错进行分析，获得位错密度低于1×108/cm2的未掺杂GaN材料。15.016.017.018.019.020.0强度计数)2θ(degree)BACABC1.0μm1.0μm1.0μm图形衬底生长GaN衬底截面生长GaN截面GaN表面采用图形衬底，进一步提高了GaN质量。在Si衬底上生长出了表面无裂纹的GaN材料。x100LED外延片产品AlGaInP红光LED外延片GaN基蓝光LED外延片LED外延片电致发光symbolAlNGaNInNCrystalstructureWurtziteWurtziteWurtziteLatticeconstanta03.1123.1913.545c04.9825.1855.703BandgapenergyEg6.283.4250.77Intrinsiccarrierconcentrationni9.4x10-341.9x10-10920EffectiveDOSatCBedgeNc6.2x10182.3x10189.0x1017EffectiveDOSatVBedgeNv4.9x10201.8x10195.31019Electronmobilityμn30015003200Holemobilityμp1430-ElectrondiffusionconstantDn73980HolediffusionconstantDp0.30.75-Electronaffinity1.94.1-Minoritycarrierlifetime-10-8-Electroneffectivemassme*0.4me0.2me0.11meHeavyeffectivemassmh*3.53me0.80me1.63meRelativedielectricconstantεr8.58.915.3RefractiveindexnearEgn2.152.52.9AbsoptioncoefficientnearEgα3x1051056x105RoomtemperaturepropertiesofsemiconductorsLED芯片主要工序后段清洗图案Mesa台面电极制作合金钝化前段磨片抛光扩片划片测试裂片分类激光切割痕迹LED芯片详细工序LED工作原理