jesd51-1 IC热性能测试标准

EIA/JEDECSTANDARDIntegratedCircuitsThermalMeasurementMethod-ElectricalTestMethod(SingleSemiconductorDevice)EIA/JESD51-1DECEMBER1995ELECTRONICINDUSTRIESASSOCIATIONENGINEERINGDEPARTMENTNOTICEJEDECstandardsandpublicationscontainmaterialthathasbeenprepared,reviewed,andapprovedthroughtheJEDECCouncillevelandsubsequentlyreviewedandapprovedbytheEIAGeneralCounsel.JEDECstandardsandpublicationsaredesignedtoservethepublicinterestthrougheliminatingmisunderstandingsbetweenmanufacturersandpurchasers,facilitatinginterchangeabilityandimprovementofproducts,andassistingthepurchaserinselectingandobtainingwithminimumdelaytheproperproductforusebythoseotherthanJEDECmembers,whetherthestandardistobeusedeitherdomesticallyorinternationally.JEDECstandardsandpublicationsareadoptedwithoutregardtowhetherornottheiradoptionmayinvolvepatentsorarticles,materials,orprocesses.BysuchactionJEDECdoesnotassumeanyliabilitytoanypatentowner,nordoesitassumeanyobligationwhatevertopartiesadoptingtheJEDECstandardsorpublications.TheinformationincludedinJEDECstandardsandpublicationsrepresentsasoundapproachtoproductspecificationandapplication,principallyfromthesolidstatedevicemanufacturerviewpoint.WithintheJEDECorganizationthereareprocedureswherebyaJEDECstandardorpublicationmaybefurtherprocessedandultimatelybecomeanEIAstandard.Noclaimstobeinconformancewiththisstandardmaybemadeunlessallrequirementsstatedinthestandardaremet.Inquiries,comments,andsuggestionsrelativetothecontentofthisJEDECstandardorpublicationshouldbeaddressedtoJEDECSolidStateTechnologyDivision,2500WilsonBoulevard,Arlington,VA22201-3834,[phone]/7559or©ELECTRONICINDUSTRIESALLIANCEEngineeringDepartment2500WilsonBoulevardArlington,VA22201-3834CopyrightdoesnotapplytoJEDECmembercompaniesastheyarefreetoduplicatethisdocumentinaccordancewiththelatestrevisionofJEDECPublication21ManualofOrganizationandProcedure.PRICE:PleaserefertothecurrentCatalogofJEDECEngineeringStandardsandPublicationsorcallGlobalEngineeringDocuments,USAandCanada(1-800-854-7179),International(303-397-7956)PrintedintheU.S.A.AllrightsreservedEIA/JEDECStandardNo.51-1-i-INTEGRATEDCIRCUITTHERMALMEASUREMENTMETHOD-ELECTRICALTESTMETHOD(SINGLESEMICONDUCTORDEVICE)Contentspage1.INTRODUCTION11PURPOSE11.2SCOPE11.3RATIONALE11.4REFERENCES21.5DEFINITIONS22.MEASUREMENTBASICS32.1TEMPERATURE-SENSITIVEPARAMETER42.1.1MEASUREMENTCURRENTCONSIDERATIONS42.1.2KFACTORCALIBRATION52.2COOLINGTIMECONSIDERATIONS62.3HEATINGTIMECONSIDERATIONS72.4TESTWAVEFORMS82.5ENVIRONMENTALCONSIDERATIONS102.6TESTSETUP113.MEASUREMENTPROCEDURE123.1DEVICECONNECTION123.1.1THERMALTESTDIE123.1.2ACTIVEDIE133.2MEASUREMENTCURRENTDETERMINATION143.3KFACTORCALIBRATION163.4TESTCONDITIONDETERMINATION183.4.1HEATINGCONDITIONS183.4.2MEASUREMENTCONDITIONS183.5TESTCONDITIONCORRECTION193.6THERMALSTEADY-STATEDETERMINATION213.7DATAVALIDITY233.8TESTCONDITIONSUMMARY244.DATACORRECTIONANDPRESENTATION24ANNEXADEFINITIONS(informative)27EIA/JEDECStandardNo.51-1-ii-ThisPageIntentionallyLeftBlankEIA/JEDECStandardNo.51-1Page11.INTRODUCTION1.1PURPOSEThepurposeofthistestmethodistodefineastandardElectricalTestMethod(ETM)thatcanbeusedtodeterminethethermalcharacteristicsofsingleintegratedcircuitdeviceshousedinsomeformofelectronicpackage.Thismethodwillprovideabasisforcomparisonofdifferentdeviceshousedinthesameelectronicpackageorsimilardeviceshousedindifferentelectronicpackages.Byvirtueofthestandardizingofallpertinentterms,thismethodalsoimprovesthecommunicationandexchangeofinformationrelativetothethermalcharacteristicsofelectronicpackageshousingasinglesemiconductordevice.1.2SCOPEThemeasurementmethoddescribedhereinisequallyapplicabletoboththermaltestdieandactiveintegratedcircuitdevices.Thermaltestdie,consistingofaheatsourceandtemperaturesensorintegratedintoasemiconductorchip,arecommonlyusedforpackagethermalcharacterizationefforts,especiallywhenonepackageisbeingcomparedtoanother.Integratedcircuitdevices,operatinginanactivemodethatapproximatesintendedapplications,areusedwhenspecificapplication-orientedspecificationinformationisrequired.Themeasurementislimitedtoasingledie(eithertestdieoractivedie)housedinapackageintendedforasingledie.1.3RATIONALEIncreasedrequirementsforsemiconductorperformance,reliability,quality,andlowercosthaveforcedtheneedforknowledgeofthesemiconductordevicejunctiontemperature.However,withoutawell-definedstandardmethodologyformakingthermalmeasurements,ithasbecomeincreasinglydifficulttoaccuratelydeterminejunctiontemperatureunderactualoperatingandenvironmentalconditions.Knowingthesemiconductordevicethermalresistanceforaspecificelectronicpackageallowsboththemanufacturerandusertodeterminethejunctiontemperatureofthedevice.Accurateandcorrectthermalmeasurementsaredifficulttomakebecauseofthemanyvariablesthatimpactthefinalresults.Electricalconsiderations(suchaspower,voltageandcurrentlevels,inputandoutputlevels,etc.),environmentalconsiderations(mountingconfiguration,surroundings,mountingmethodology,etc.)andselectionofthejunctiontemperaturesensorwilldirectlyaffectthethermalmeasureme