BSIM 480_Manual

BSIM4v4.8.0ManualCopyright©2013UCBerkeleyBSIM4v4.8.0MOSFETModel-User’sManualNavidPaydavosi,TanvirHasanMorshed,DarsenD.Lu,Wenwei(Morgan)Yang,MohanV.Dunga,Xuemei(Jane)Xi,JinHe,WeidongLiu,Kanyu,M.Cao,XiaodongJin,JeffJ.Ou,MansunChan,AliM.Niknejad,ChenmingHuDepartmentofElectricalEngineeringandComputerSciencesUniversityofCalifornia,Berkeley,CA94720BSIM4v4.8.0ManualCopyright©2013UCBerkeleyDevelopers:BSIM4v4.8.0Developers:ProfessorChenmingHu(projectdirector),UCBerkeleyProfessorAliM.Niknejad(projectdirector),UCBerkeleyDr.NavidPaydavosi,UCBerkeleyDevelopersofBSIM4PreviousVersions:TanvirMorshed,UCBerkeleyDarsenLu,UCBerkeleyDr.WeidongLiu,SynopsysDr.XiaodongJin,MarvellDr.Kanyu(Mark)Cao,UCBerkeleyDr.JeffJ.Ou,IntelDr.JinHe,UCBerkeleyDr.Xuemei(Jane)Xi,UCBerkeleyDr.WenweiYangDr.MohanV.Dunga,UCBerkeleyProfessorAliM.Niknejad,UCBerkeleyProfessorChenmingHu,UCBerkeleyWebSites:BSIM4websitewithBSIMsourcecodeanddocuments:=BSIM4CompactModelCoalition::©2013UCBerkeleyAcknowledgement:ThedevelopmentofBSIM4.8.0benefitedfromtheinputofmanyBSIMusers,especiallytheCompactModelCoalition(CMC)membercompanies.ThedeveloperswouldliketothankKeithGreenatTI,Jung-SukGooandWenweiYangatGlobalfoundries,XingmingLiuandJushanXieatCadence,JoddyWang,RobinTan,JaneXiandWeidongLiuatSynopsys,BenGuatFreescale,JamesMaatProPlusDesign,JoeWattsatIBM,GeoffreyCoramatAnalogDevice,Wei-hungChenatUCBerkeley,fortheirvaluableassistanceinidentifyingthedesirablemodificationsandtestingofthenewmodel.TheBSIMprojectispartiallysupportedbySRCandCMC.BSIM4v4.8.0ManualCopyright©2013UCBerkeleyContentsChapter1:EffectiveOxideThickness,ChannelLengthandChannelWidth...................................11.1GateDielectricModel............................................................................................................31.2Poly-SiliconGateDepletion...................................................................................................4Chapter2:ThresholdVoltageModel............................................................................................102.1Long-ChannelModelWithUniformDoping........................................................................102.2Non-UniformVerticalDoping..............................................................................................112.3Non-UniformLateralDoping:Pocket(Halo)Implant..........................................................132.4Short-ChannelandDIBLEffects...........................................................................................142.5Narrow-WidthEffect...........................................................................................................17Chapter3:ChannelChargeandSubthresholdSwingModels.......................................................203.1ChannelChargeModel........................................................................................................203.2SubthresholdSwingn..........................................................................................................23Chapter4:GateDirectTunnelingCurrentModel.........................................................................254.1ModelSelectors...................................................................................................................264.2VoltageAcrossOxideVox.....................................................................................................264.3EquationsforTunnelingCurrents........................................................................................274.3.1Gate-to-SubstrateCurrent(Igb=Igbacc+Igbinv)...............................................................274.3.2Gate-to-ChannelCurrent(Igc0)andGate-to-S/D(IgsandIgd).........................................284.3.3.PartitionofIgc..............................................................................................................29Chapter5:DrainCurrentModel....................................................................................................315.1BulkChargeEffect...............................................................................................................315.2UnifiedMobilityModel.......................................................................................................315.3AsymmetricandBias-DependentSource/DrainResistanceModel...................................355.4DrainCurrentforTriodeRegion..........................................................................................375.5VelocitySaturation..............................................................................................................385.6SaturationVoltageVdsat.......................................................................................................385.6.1Intrinsiccase.................................................................................................................385.6