AOS-IGBT

AOSIGBT推广资料IGBT概述IGBT的应用领域IGBT的等效电路IGBT技术发展和难点IGBT和MOS的对比本节内容9/22/2014AOSConfidential2IGBT的应用领域9/22/2014AOSConfidential3电力传输太阳能/风力发电汽车电子，包括电动汽车驱动，机车牵引，电子点火等医疗设备家电应用：白色家电、电磁炉等其它应用，如变频器、UPS、电焊机等IGBT等效电路9/22/2014AOSConfidential4IGBT≈MOSFET+GTR栅极输入和MOSFET类似----高阻，易于驱动；功率部分表现更像三极管-----饱和压降低，存在拖尾现象。IGBT技术发展集电极发射极PBodyN+Emitter栅极N-EpiNBufferP+SubstratePunchThroughPT发射极PBodyN+Emitter栅极N-Epi集电极Non-PunchThroughNPT发射极PBodyN+Emitter栅极N-EpiNBuffer集电极FieldStopFS/SPT/LPT关闭损耗高;负温系数容易发生电闩锁;需要载流子寿命控制饱和压降高关闭损耗低无需载流子寿命控制;正温系数饱和压降低;关闭损耗低;无需载流子寿命控制;高温特性好.9/22/2014AOSConfidential5IGBT技术发展9/22/2014AOSConfidential6耐冲击饱和压降高栅极充电荷高饱和电流高饱和压降低限制注入增强耐压和电流折中饱和压降低平面栅NLayer沟槽栅载流子储存沟槽栅(CSTBT)MitsubishiIGBT技术折中9/22/2014AOSConfidential7导通损耗(VCESAT)开关损耗(EOFF)短路性能(SC-SOA)IGBTvs.MOS9/22/2014AOSConfidential8•电压250V，通常选用MOSFET，250V的IGBT是很少见的。•电压1000V的场合，通常选用IGBT，MOSFET的损耗过高。•电压在250V和1000V之间，需综合考虑功耗、开关频率和器件成本。MOSFET----Ploss=Irms^2*RdsonIGBT----Ploss=Iave*Vcesat低压MOSFET的Rdson容易控制（10毫欧）随着温度升高，Rdson递增，Vcesat却趋向于减小（大电流条件下除外，另外为了易于并联使用，IGBT的Vcesat是做成正温系数的）。IGBT的拖尾电流导致开关损耗更高，它是制约IGBT高频应用的最大因素。频率较低（如电机驱动，通常小于30kHz），IGBT和MOSFET效果一样或更佳。为了适应不同应用，IGBT出现不同优化：高速的IGBT开关损耗小，但Vcesat偏高，低速的IGBT则具有更低的Vcesat。本节内容AOSIGBTAOSIGBT产品AOSIGBT性能表现和对比AOSIGBT特点AOSIGBT的可高靠性能9/22/2014AOSConfidential9AOSaIGBTTM产品TO-220(AOTXXX)DPAK/TO252(AODXXX)2012TO-220F(AOTFXXX)2013TO247(AOKXXX)封装IPAK/TO251(AOUXXX)600VaIGBT家族白家电产品600V,1200V,aIGBTII20141200VaIGBT家族电磁炉、感应加热1200VaIGBT家族工业应用600VaIGBT家族焊机/UPS/太阳能9/22/2014AOSConfidential10D2PAK/TO263(AOBXXX)I2PAK/TO262(AOWXXX)9/22/2014AOSConfidential11600V,1200V,1350VaIGBTTMProductPackageVCE(MAX)(V)IC(A)(100C)VCE(SAT)(V)TypEOFF(mJ)Ic,400V,25CApplications5B60DTO252TO220/FTO26360051.60.04Whitegoods10B60DTO220/FTO263TO247600101.60.07Whitegoods15B60DTO220/FTO263TO247600151.60.11Whitegoods20B60D1TO220/FTO263TO247600201.850.18Welding/UPS/Solar30B60D1TO247600301.850.24Welding/UPS/Solar40B60D1TO247600401.850.30Welding/UPS/Solar50B60D1TO247600501.850.50Welding/UPS/Solar60B60D1TO247600601.850.75Welding/UPS/Solar30B60DTO247600301.60.46MotorDrive40B60DTO247600401.60.50MotorDrive75B60DTO247600751.60.95MotorDrive20B120D1TO2471200201.550.90IHCooking20B135D1TO2471350201.550.90IHCookingAOS的IGBT性能对比IGBTVCE(SAT)(V)EOFF(uJ)CaseTemperature（℃）TSC(us)AOB5B60D(AOS)1.282525458CompetitorA1.292906729CompetitorB1.252966832CompetitorC1.412806124AOSIGBT性能：•出色的性能优化；•低关断损耗、低正向压降、高短路能力；•内置并联软恢复特性的二极管。※数据为洗衣机电机驱动器上实测结果9/22/2014AOSConfidential12AOS的IGBT性能表现9/22/2014AOSConfidential13EoffvsVCE(SAT)2002202402602803003201.21.251.31.351.41.45VCE(SAT)VAOB5B60D(AOS)CompetitorACompetitorBCompetitorCEOFF(mJ)PWM:TON=22us,TP=100us,ION=3.4A※数据为洗衣机电机驱动器上实测结果AOB5B60D(AOS)具有更好的性能平衡表现AOSIGBT关闭和短路性能RobustShortcircuitIsc=4xIc10usVce=400VVge=15V-5051015202530-2.0E-07-1.5E-07-1.0E-07-5.0E-080.0E+005.0E-081.0E-071.5E-072.0E-07-50050100150200250300350400450Vgs25CIc25CVgs100CIc100CVgs150CIc150CVds25CVds100CVds150CVge(V)/Ic(A)Vce(V)Time(s)15AIGBTSwitchingvsTempVce=400V,Ic=15A,Vge=15V,Rg=20ohmIcVceTurnoffVgeAOSIGBT拥有出色的高温性能。AOSIGBT专有技术，降低Vce、Eoff同时保留强壮的短路冲击能力。9/22/2014AOSConfidential14Qge/Qgc/Qg对比DeviceVth(V)Qge(nC)Qgc(nC)Qg(nC)Vge=15VBuilt-inRgAOT20B60D5.8129.331NoCompetitorA51640100NoCompetitorB5.11065120NoCompetitorC573263NoAOSAlphaIGBTs的关键参数：•和其他对手产品对比，AOSIGBT产品的Qg更低。•低Qgc•低Qgc/Qge比率※数据来自产品规格书9/22/2014AOSConfidential15本节内容9/22/2014AOSConfidential16焊机应用测试•AOSIGBT在80KHz焊机中应用•80A输出时的温度表现电磁炉应用测试•关闭损耗测试对比•导通损耗测试对比•温升测试对比白家电应用测试•IGBT在冰箱/洗衣机中的应用•开关损耗测试•导通损耗测试•温升测试•短路承受能力测试•IGBT在空调中的应用AOSIGBT在80KHz焊机中应用林肯(Lincoln)V155-S120/230V变频弧焊机；并联使用6个30A/600V/TO220英飞凌NPT工艺的IGBT；使用AOS15A/600V替换；实测温度结果很接近；并联和均流使用均没问题。9/22/2014AOSConfidential17DeviceD_HIGBTIGBTIGBTIGBTIGBTIGBTD_STemp(oC)61.465.263.563.762.159.459.754.7空气流动方向80A输出时的温度表现9/22/2014AOSConfidential18DeviceD_HIGBTIGBTIGBTIGBTIGBTIGBTD_SSGP30N60HS下管T(oC)57.362.862.264.866.166.167.866.7DeviceD_HIGBTIGBTIGBTIGBTIGBTIGBTD_SAOT15B60D下管T(oC)55.259.263.464.463.264.465.367.9空气流下管温度Vce(sat)@15AEoff@400V,15A短路承受时间SGP30N60HS2.5V240uJ10usAOT15B60D1.6V110uJ10usAOSIGBT在电磁炉中应用9/22/2014AOSConfidential19Media2100W电磁炉型号原装IGBTL1@20KHz(uH)RDCofL1(mohm)L2@20KHz(uH)RDCofL2(mohm)工作频率(KHz)2105W(旧版本)H20R1203312168.49925023C21-QH2101(新版本)H20R135318414910019523新版本型号为C21-QH2101,超薄•新版的L1(EMI电感)感量更小•新版的L2(绞线盘)直流阻抗更小Newmodel,super-thinAOK20B120D关闭损耗测试对比9/22/2014AOSConfidential20EOFF:528uJEOFF:669uJEOFF:728uJVGE:5V/divICE:20A/divVCE:200V/divVGE:5V/divICE:20A/divVCE:200V/divH20R1203AOK20B120DH20R1353AOK20B120D关闭损耗(EOFF)比H20R1353小H20R1203具有最低的关闭损耗(EOFF)EOFF@VIN:AC220VPO:2100W,旧版机器AOK20B120D导通损耗测试对比9/22/2014AOSConfidential21VCE(SAT):2.23V@Ice=55AECON:0.879mJH20R1203AOK20B120DH20R1353VCE(SAT):2.46V@Ice=50AECON:1.152mJVCE(SAT):2.54V@Ice=50AECON:1.154mJVGE:5V/divICE:20A/divVCE:2V/divVGE:5V/divICE:20A/divVCE:2V/divVGE:10V/divICE:10A/divVCE:2V/divAOK20B120D饱和压降Vce(sat)比H20R1353小H20R1203具有最低的饱和压降Vce(sat)ECONDUCTION@VIN:AC220VPO:2100W,旧版机器AOK20B120D参数对比汇总测试结果规格书IGBT耐压(V)VCE(SAT)@50A(V)ECON(mj)EOFF@50A(mj)VF(V)RTHJC_IGBT(℃/W)RTHJC_DIODE(℃/W)AOK20B120D14502.461.1520.6691.40.451.4H20R13531560