黄光制程

Litho黄光制程简介Litho目录•半导体制程简介•黄光制程简介•涂胶系统•曝光系统•显影系统•检测系统•总结黄光制程Litho半导体制程简介生长薄膜(Thinfilm)黄光(Photo)蚀刻(Etch)离子注入(Implant)扩散(Diffusion)清洗(Clean)抛光(CMP)清洗(Clean)清洗(Clean)Litho什么是黄光区?LithoMaterialSelectionImprovedADchamberAdditionalPreFilterTRACKCleaningSystemSeparationLithographyAreaOtherAreaNH3-CleanRoom-†Clean†WaveLengthControl“Class100”within100(0.5umUP)/f3(0.028m3)LithoPhotoin-lineprocessflowoverviewDefinition:PhotolithographyIt’spatternprintingprocessontheresistcoatedwaferbyUVexposureandpatterndesignedmask(Reticle).WaferFilmFilmDepositionWaferFilmPhotoresistResistCoatWaferFilmPhotoresistUVExposurehvReticleWafer　DevelopingFilmWaferEtchGasEE/FOOLBaseLine/FBMix&Match(System)PatternSizeControlPatternProfileControlAlignControlbetweenlayerPhotoJOBFACTOR•Processconditiondependsonwhichlayer:Substratecondition,CD,Topology,OLtarget,Etchtargetetc•Keyprocessfactor:Tpr(A),UseBARCornot,SB,TARCornot,WEE,EE,FO,OLoffset,PEB,Dev.Dippingtimeandsoon.•Keymachinefactor:Cupexhaustpressure,Waterjacketcontroltemp,Chamberpressure,Temp,focus,Plateexhaust,PEBtempAccuracy.[1]GeneralFlowLithoPhotoin-lineprocessflowoverviewHMDScoatCooling1PRCoat(**)SoftBakeCooling2WEE($)EGAalign　ExposureHardBakeDevelopingP.E.B($$)Scope($$$)OLmeasureCDmeasureIonImpEtchReworkDepositionEXPOSURETRACKPRstripIN-LINECoolingBARCTARC(***)BAKE(*)2-24HHP2-14HHP3-243-14LHP2-23HHP2-13HHP3-23CHP3-13LHPWEE1-32-22LHP2-12LHP3-22CHP3-12LHPCSTstage2-21CPL2-11CPL3-21CHP3-11CPL4-42-202-10CWH3-203-101-02-19CPL2-29LHP2-9CPL3-19CHP3-9CPL2-82-28LHP2-18SHU3-184-04-51-22-7ADH2-27LHP2-17SHU3-27LHP3-17CPLCSTstage2-6TRS2-26LHP2-163-26LHP3-16TRS2-5TCP2-25LHP2-15ADH3-25LHP3-15CPLCSTstage2-03-04-3(Buff)1-12-3ARC2-4ARC3-33-44-2(Buff)2-1PR2-2PR3-13-24-1(Buff)stepper(*)AbsolutelyweremovemoistureonthewaferbeforeBARCcoating:Secondaryreaction(**)EBRisnotabsoluteprocess:WecanuseWEEinsteadofEBR==Needrecipetuning(***)TARCshouldbecoatedafterPRbake(Softbake):DonotTARCbake(Secondaryreaction)($)WecanchangefrombeforeexposuretoafterexposureforI-line,butDUVcannot.($$)PEDcontrolisveryimportanttomaintainprocessperformanceforDUV,butI-lineisn’t.($$$)ADIprocedureisimportanttoreduceADIloss:Scope==OL==CDBAKELitho黄光制程简介简单的来说,黄光制程分为四大部分:•涂胶•曝光•显影•检测Litho涂胶显影机的外形Litho1.什么是光阻(Photoresist)光阻是一种化学材料，在PHOTOprocess中经过曝光和显影两个步骤将光罩(Mask)上的图形转移到光阻上，在下一站etch或implant时作为保护层将不需要etch或implant的地方保护起来，再次将图案转移到wafer上。2.光阻的分类光阻分正光阻(Positivephotoresist)和负光阻(Negativephotoresist)。感光的部分溶于显影剂(Developer)的叫正光阻，感光的部分不溶于显影剂的叫负光阻。Litho光阻在图形中的作用:•Usedto“resist”etch.•Usedto“resist”ionimplantation.•Accurately“aligned”tootherpatterns.•Criticallysized.Litho在晶圆上面涂上一层光阻.共分成6大部步骤涂胶的步骤第一步:脱水(DEHYDRATION),用加热法去掉晶圆的水分.俯视图侧面图Litho涂胶的步骤第2步:粘附(ADHERSION),用粘附济(HMDS)涂在晶圆表面以增加粘附性.俯视图侧面图HMDSLitho第3步:冷却(COOLING),把晶圆冷却到室温.俯视图侧面图涂胶的步骤Litho第4步:涂胶(COATING),把晶圆涂上一层光阻胶.侧面图俯视图E.B.R.(EdgeBeadRemoval)光阻胶涂胶的步骤Litho第5步:预烘(SOFTBAKE),用加热法把光阻中的溶剂蒸发掉.侧面图俯视图涂胶的步骤Litho第6步:冷却(COOLING),把晶圆冷却到室温.侧面图俯视图涂胶的步骤Litho曝光机的外形Litho曝光的作用侧面图LightReticleLensResistWafer俯视图Litho曝光机的分类•按光源分类:DUV(波长=248);I-line(波长=365nm)•按运作分类:扫描机(SCANNER);步进机(STEPPER)Litho66++++FiducialTestKeyTestLineMainPatternScribeLineGlobalMarkQACellBarcode什么是光罩?光罩是有很多图形(Pattern）的模板设计图形Litho什么是显影液:•Developerisusedtochemicallydevelopthephotoresistpatternonexposedwafers.Thebasicdeveloperreactswiththeexposure-inducecarboxylicacidresist.Litho显影的步骤:第1步,曝光后之烘烤(PEB),目的是减少驻波.俯视图侧面图Litho第2步,冷却(COOLING),把晶圆冷却到室温俯视图侧面图显影的步骤:Litho第3步,显影(DEVELOPING).显现图形.俯视图侧面图显影液显影的步骤:Litho俯视图侧面图第4步,后烘(HARDBAKE).使光阻硬化.显影的步骤:Litho第5步,冷却(COOLING),把晶圆冷却到室温俯视图侧面图显影的步骤:Litho检测系统检测共分4个部份,其中首3个用在产品.•OVERLAY•CDSEM•ADIINSPECTION•RESISTTHICKNESSMEASUREMENTLithoOVERLAY的作用------测量图形的对准状况.机台外观:前层现层LithoCD-SEM的作用-----测量图形的大小.机台外观:LithoADIINSPECTION的作用-----显影后,检测晶圆上有没有瑕次.机台外观:Litho厚度测量仪的作用-----用来测量光阻的厚度光阻的厚度Litho总结黄光制程脱水(Dehydration)粘附(HMDS)冷却(Cooling)涂胶(Coating)预烘(Softbake)冷却烘烤(PEB)冷却检测Overlay检测CDSEM检测ADI检测光阻厚度曝光(Exposure)光罩(Reticle)显影(Developing)冷却后烘(Hardbake)Litho1.曝光机(Duv,I-line,g-line)•ASML的Scanner:LithoScannerStepperLitho曝光机的种类(Scanner,Stepper)工作方式区分：1.步进式曝光机：Stepper主要机台：CannoniZ012.扫描式曝光机：Scanner主要机台：CannonES3,ASML/400,/750,/850,/1100工作光源区分：1.I-Line曝光机：365nm(Hg-Arc)主要机台：CannoniZ01,ASML/400,2.DUV曝光机：248nm,193nm(Laser)主要机台：CannonES3,ASML/750,/850,/1100Litho为什么要用ScannerLithoScanner工作原理图1VariableNAREMAImagingOpticsInternalReticleMaskingQuartzRodMotorDriverZoomsigmalensesShutter/AttenuatorImagedMaskingBladesForMaximizingUsableReticleAreaZoomSigmaControlforHighestIntensity&ThroughputAtAllIlluminatorSettingsAutomatedControlofNAandConventional/AnnularIlluminationForOptimumCDControlOnEachProcessLayerWaferReticleConventionalAnnularProjectionlensentrancepupilfilling3.0kWHgarclampEntrancePupilLithoScanner工作原理图2LithoScanner和Stepper的异同1LithoExposurescanSlitscanPrescanSlitscanScandirectionREMAbladescloseScanningexposurefieldREMAbladesopenStagesandLSsettleWhatisaScan?Ascanconsistsoffoursectionsandsomethingdifferenthappensduringeachpart.LithoLensIntegratorrodWaferdirectionReticledirectionREMAbladeREMAbladeCelltobeexposed.StartoftheSlitScanLithoIntegratorrodWaferdirectionRet