100keV质子辐照对空间GaAs-Ge太阳电池光电效应的影响-赵慧杰

©1994-2010ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.)­1)2)2)2)2)2)1)1)1)(,150001)2)(18,300381)(200867;2008729),100keV110931012cm-2,GaAsPGe.(I2V)(PL),.,(Isc)(Voc)(Pm)(FF),.,..,,.:GaAsPGe,,PACC:6180,6855,7240,78553(:G200551343).­.E2mail:[e-mail]11GaAs,400800nm,GaAs,,GaAs[18].,()GaAsPGe.100keV110931012cm-2,GaAsPGe,GaAsPGe(I2V)(PL),GaAsPGe,GaAsPGe,GaAsPGe.212111GaAsPGe.(MOCVD),18152015%(AM0,25),I2V1,2.nGe,GaAs,,.015115mn+,Si(12)1017cm-33m,Zn(24)1018cm-30151mp+,AlxGa1-xAs(x0180185),01030105m,1P4.,,58120091100023290P2009P58(01)P0404207ACTAPHYSICASINICAVol.58,No.1,January,2009n2009Chin.Phys.Soc.©1994-2010ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.(MOCVD)I2V2MOCVDGaAsPGe2121()(10-410-5Pa).100keV,110931012cm-2,.109cm-2s-1,4%.2131AM0(,13513mWPcm2),,GaAsPGeI2V,(Voc),(Isc),(Pm),(FF)().,.214118,AM0,25,GaAsPGe,.2151(PL)18,GaAsPGePL,.3131113100keVGaAsPGeI2V.,GaAsPGe;,11010cm-2,GaAsPGeI2V;,VocIsc,,FF.3GaAsPGeI2V(AM0,,).5041:100keVGaAsPGe©1994-2010ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.(),,.().GaAs,AsGa,[9]..,,...,NT[9],NT=K0,(1)K0.,.,L.D[9]:L=D.(2).,01440MeV.,,,.,,()[9]1P=1P0+KPPvth,(3),E;vth;KP,;0.L[9]1PL2-1PL20=KL,(4)LL0,KL,.(),[9].,IscL[9],IscL1P2-1P2,(5)I0VocPm[9]I0=qN2i1NADnn1P2+1NDDpp1P2-1P21P2,(6)Voc=kTqlnIscIo+1lnln-1,(7)PmIscVoc-1P2ln-1,(8)q116021010;k;Ni;;T;NA;ND;n;p;Dn;Dp.,,,.,L.,[9].,.3121GaAsPGe,,.4100keVGaAsPGe.,100keV,GaAsPGe,;,.100keV11011cm-2,11012cm-231012cm-2,500nm26%,51%82%,800nm7%,29%38%.,,GaAsPGe,.Jsc[10],Jsc()=Jn()+Jp()+Jdr(),(9)SR[10]SR()=SRn()+SRp()+SRdr().(10)p(p2AlGaAsp2GaAs),nSR.60458©1994-2010ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.(),,1.,60%90%[10].300nm,p;400900nm,nXj;900nm,GaAs,Sn.4,GaAsPGeSR(),SR(),p.GaAs,AlxGa1-xAsp2GaAs,.p2n,p2n,,p2GaAsLnXj,;,Sn,,[8].,,,,.Ln[7]1L2nr=1L2n0+KLn,(11),Ln0Lnrp2GaAs,,KLn.,,Ln.,KLn,,.SRIM.100keVGaAs0175m..,100keV.100keV,GaAsPGe,p2n,,,.3131GaAsPGe(PL)PL.GaAs,,.GaAs,GaAs,,GaAs840nm[10].PL.,,,.,.PL,GaAsPGe,GaAs,GaAsPGe.GaAsPGe,5.5,881nm(E=11405eV)7041:100keVGaAsPGe©1994-2010ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.(100keV)GaAsPGe,GaAs.,,(z),.[10],,E2DnE2Dn=-R3yn-122,(12)R3y.,(n=1),,,.,GaAs,.GaAs,h,,,,,,.,2D1S[10]2D1S=22a3Be-2ra3B,(13),a3B[10],a3B=E0Ü2e2,(14);E0;Ü.GaAs10nm,,.,,GaAs,,,,,.,,,.56,,,.,,,.,,;,2(Frenkel)[9].,.80458©1994-2010ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.[9].,,GaAs[9].,,,,.(DLTS)GaAs[11].Sheng[12],Gonzlez[13][14]DLTS,,GaAs;,GaAs.DLTS,GaAsPGeEc-0124eV,Ec-0133eV,Ec-0138eV,Ec-0152eV,Ec-0172eV;.,GaAsPGe,.,,,,,,,.4111100keV,,GaAsPGe.21:100keV,GaAsPGe,;,.31:100keV,GaAsPGeGaAs.;,,;,,.41100keVGaAsPGe.,,,.[1]ScholzS,BauerJ2006Cryst.41111[2]ZhangXH2004ChineseJournalofPowerSources117(inChinese)[2004117][3]MessengerSR,BurkeEA20033rdWorldConferenceonPhotovoltaicEnergyConversion511[4]SharpsPR,AikenDJ200217thSpacePhotovoltaicResearchandTechnologyConference1055[5]ZhangTQ,LiuCY2001ActaPhys.Sin.502434(inChinese)[2001502434][6]ChenXY,DingXM,ZhangSK,etal1997ActaPhys.Sin.46612(inChinese)[199746612][7]XiangXB,DuWH2001EnergyMaterialandSolarCells6897[8]ZhuWZ,ShenKH1996ActaPhys.Sin.45258(inChinese)[199645258][9]CaoJZ1993RadiationDominoOffectofSemiconductorMeterial(Beijing:Sciencep)p145(inChinese)[1993()p145][10]SenXC1992OpticsPropentyofSemiconductor(Beijing:sciencep)p633(inChinese)[1992()p633][11]LuF1994ActaPhys.Sin.431129(inChinese)[1994431129][12]ShengSL,LooRY1991SolarCells31349[13]GonzlezM,AndreCL2006JournalofAppliedPhysics100034503[14]HuangWX1999ChineseJournalofSemiconductors20957(inChinese)[199920957]9041:100keVGaAsPGe©1994-2010ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.)­HeShi2Yu1)SunYan2Zheng2)SunQiang2)XiaoZhi2Bin2)LWei2)HuangCai2Yong2)XiaoJing2Dong1)WuYi2Yong1)1)(SpaceMaterialsandEnvironmentEngineeringLaboratory,HarbinInstituteofTechnology,Harbin150001,China)2)(ChinaElectronScienceandTechnologyGroupEighteenthGraduateSchool,Tianjin300381,China)(Received7June2008;revisedmanuscriptreceived29July2008)AbstractTheexperimentofGaAsPGesolarcellsco2irradiatedbyprotonandelectronwasdoneinspaceenvironmentsimulationequipment.ThematerialsofGaAsPGesolarcellareirradiatedbyprotonbeamwithfixedenergyof100keVanddosefrom1109to31012cm-2.TheI2Vcharacteristic,spectralresponseandphotoluminescence(PL)spectraweremeasuredbeforeandafterirradiationinordertostudythecellpsperformancedegradationinducedbyirradiation.Theresultindicatedthattheparameterssuchasshortcircuitcurrent(Isc),opencircuitvoltage(Voc),maximumoutputpower(Pmax)andfillfactor(FF)allsufferdegradationatdifferentdegreesastheirradiationfluenceincreases.Theresultsshowthatprotonirradiationinducesagreatdamageinopticalc