氮化镓研制中的退火技术

©1994-2010ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.(,050051):GaN,:GaN;;p;;:TN305:A:100125507(2001)0320027206StudyofGaNannealingtechnologyZHANGHui2xiao,WUXi2long,YANGHong2wei,ZHANGRong2gui(The13thElectronicResearchInstitute,Shijiazhuang050051,China)Abstract:TheannealingtechnologiesintheprocessesofGaNfilmgrowthandthedevicefabrica2tionarepresentedinthispaper.Thetechniqueprocedure,mechanismandinfluenceofannealingareallincluded.Keywords:GaN;annealing;p2doping;ohmiccontact;rectifyingcontact190,GaN,GaN()GaN()GaN,60,,GaN,,MOCVDMBE,,,GaN,GaNpöGaN,GaN,GaNöGaN7238320016©1994-2010ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.(ZnOMgO)GaN,,Ë2Í,GaN,GaN,GaN,,350,500,750,9001120,1530,1,1530,13öGaN,,öGaN,,GaN,GaNGaNNNH3,N,,,,NH3NH3,H,,pJ.Hong[1]AlNInNN,,AlNGaN1050,InNN,750In,3GaNGaN,,(AlNGaN),,GaN(TCA),3111(a)GaN,T1(),T2()AlNGaN,T3GaN1(b),T3(NH320)K.Wang[2]1(c),T3T4(T3T4),20151(d)[3],,T3,20,T4,312GaN,(),(RTA)600800,1;750900,304411GaN(GaN16%,25%),GaN,,8238320016©1994-2010ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.(a);(b);(c);(d),,GaNM.W.Cole[4],,1,600800(TEM),,GaN30%25%,()80060060%(2),2,GaN,,(NH3H2,900,20),,,In2HwanLee[5]K.Wang[2](001)(111)GaAsGaN,,(001)GaAs()GaN(H2AsH3,750,15),öGaN9238320016©1994-2010ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.[6]npGaNp,Mgp(Mgp),Nakamura[7],MgpGaN,GaNp231018cm-3:MgH,MgMg,p,p41212,,[4],HC413GaN,GaN,3148eV213eV3148eV(DOX),213eV(CGa)[8,9],,,3GaN,[5]35GaN,,,,GaN,(n2GaN412eV,p2GaN715eV),,p2GaN,ön2GaNöp2GaN,öGaNGaNMESFETHEMT,öGaN,,öGaN,ön2GaN110-88cm2,öp2GaN10-310-48cm2GaN,511öGaN51111ön2GaNön2GaN,TiAlAu;0338320016©1994-2010ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.öAlöNiöAu,ön2GaN10-110-38cm2,,,510-5310-88cm2,,11ön-GaNönmö8cm2M.E.Lin[10]n2GaN(0001);MOCVD;1Lm;1101017cm-3;100cm2öVsTiöAl(20ö100)810-6N290030TiöAu(20ö100)Al(100)Au(100)10-210-3N2,20,500700J.S.Foresi[11]n2GaNR;ECR2MBE;116Lm;31018cm-3;20cm2öVsAlAu(100)110-3N25752Y.J.Wu[12]n2GaN;MOCVD;115101731017cm-3;400600cm2öVsTiöAu(20ö200)351510-6Ti,97530Z.F.Fan[13]n2GaN(0001);MBE;2Lm;Si41017cm-3TiöAlöNiöAu(15ö220ö40ö50)81910-890030L.F.Lester[14]n2GaN(0001);Si;4Lm;31019cm-3TiöAl(30ö200)11010-5N2,1120,15,(1)(15),(Al2O3),;(2)(),;(3)(RIE)1ö21ö5,:(1),;(2)N()51112öp2GaNöp2GaN,,,310-1510-48cm2,CröAu,NiöAu,NiöPtöAuPtöNiöAu,2öp2GaN2öp-GaNö8cm2Trexler[15]CröAup2GaN41110-190015Jang[15]NiöPtöAup2GaN21110-2Ar50030Ja2SanJang[16]PtöNiöAup2GaN51110-4N23501J.KSheu[17]NiöAup2GaN116910-3N250070010J.K.Sheu[10]NiöAuöp2GaN,x,NiNi3NNi4N512öGaNGaNMESFETHEMTöGaN,Schmitz[11]Pdön2GaN5,300,,300500,1338320016©1994-2010ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.[12]Tiön2GaN,N2H2(241)(60mtorr),203,60350,(60250meV230447meV),3003506,GaN,GaN,GaN1HongJ,LeeJMetal.HightemperatureannealingofGaN,InN,AlNandrelatealloys.Solid2stateElectronics,1997;41(5):6812IwayaM,TakeuchiT,YamaguchiSetal.Reductionofetchpitdensityinorganometallicvaporphaseepitaxy2grownGaNonsapphirebyinsertionofalow2temperature2depositedbufferlayerbetweenhigh2temperature2grownGaN.JapaneseJournalofAp2pliedPhysics,1998;37:L3163WangK,PavlidisD,CaoJ.Effectofinsituthermalcycleanneal2ingonGaNfilmpropertiesgrownon(001)and(111)GaAs,andsapphiresubstrates.JournalofElectronicMaterials,1997;26:14ColeMW,RenF,PeartonSJ.Postgrowthrapidthermalanneal2ingofGaN:Therelationshipbetweenannealingtemperature,GaNcrystalquality,andcontact2GaNinterfacialstructure.Ap2pliedPhysicsLetters,1997;71:30045LeeIH,ChoiIH,LeeCRetal.Effectsofhillocksandpost2growthannealingonelectricalpropertiesinGaNgrownbymet2alorganicchemicalvapordeposition.JournalofCrystalGrowth,1997;182:3096NakamuraS,SenohM.JapaneseJournalofAppliedPhysics,1998;37:L6277NakamuraSetal.JapaneseJournalofAppliedPhysics,1998;37:L6278LinH,KimJG,CuduigMHetal.OnthekineticsofgrowthofhighlydefectiveGaNepilayersandtheoriginofthedeeptrapresponsibleforyellow2bandluminescence.AppliedPhysicsLet2ters,1997;71(3):3479SchubertEF,GoepfertID,RedwingJM.Evidenceofcompen2satingcentersasoriginofyellowluminescenceinGaN.AppliedPhysicsLetters,1997;71(22):322410SheuJK,SuYK,ChiGetal.JournalofAppliedPhysics,1999;83:317211SchmitzAC,PingAT,KhamMAetal.HightemperaturecharacteristicsofPdSchottkycontactsonn2typeGaN.Elec2tronicsLetters,1996;32:183212HirschMT,DuxstadKJ,HallerEE.EffectsofannealingonTiSchottkybarriersonp2typeGaN.ElectronicsLetters,1997;33:95(8),,,,,(2),,,(3)pSIOD,p+,,,,,MEMS2338320016