EBSD技术结合背散射电子成像在材料研究中的应用

29120102电子显微学报JournalofChineseElectronMicroscopySocietyVo-l29,No112010-02:1000-6281(2010)01-0075-05EBSD郭宁,黄天林,周正,栾佰峰,刘庆*(重庆大学材料科学与工程学院,重庆400044):本文以桥梁用过共析珠光体钢微观组织结构和冷轧高纯镍退火再结晶行为的研究为例,系统阐明了电子背散射衍射(EBSD)技术结合背散射电子(BSE)成像技术在材料研究中的应用在EBSD面扫之前,先用BSE成像技术观察晶粒尺寸,发现缺陷形变区及再结晶晶粒等区域,然后用EBSD技术设定合理的扫描区域大小及扫描步长对感兴趣区域进行晶体取向标定EBSD与BSE成像技术的结合可以充分发挥晶体取向成像技术在材料研究中的巨大优势:EBSD;BSE;ECC;SEM;微观组织:TG142;TG115121+513;TG115123:A:2009-12-30:(1983-),(),.E-mai:[e-mail].*:,E-mai:[e-mail].(EBSD),,[1~5](SE-SEM)(BSE-SEM),EBSD,EBSD,(SAED-TEM),EBSD,,EBSDmapping,,SEM,EBSD,EBSD,EBSD,,,,,EBSDmapping,,EBSDmaping,,,,,EBSD,,EBSDBSEEBSD,1SterlmorEBSD10%+90%,20V,016~018AFEINova400(FEG-SEM)OxfordinstrumentHKLEBSDEBSDChannel52211BSE,:,,,,,(Z-contrast);,,,1:EBSD,(topographycontrast);[6],BSE,,,;,,,,,,,,(ECCI),11,a:;b:Fig.1Particlemodelofelecronchannllingcontrastimaging(ECCI)theoryforthevariationinelectronbackscatteringastheincidentbeamchangesitsanglerelativetoacrystallattice.a:Backscatteringissignificantwhenthebeamhasalargeangelwithasetofatomicplanes;b:Backscatteringisreducedifthebeamisalmostparalleltoasetofatomicplanes.,EBSD,,,EBSD,ECC,EBSD;EBSD,ECC,EBSD,ECCIECC,,,,,BSE,SEMBSE(2),,EBSDBSE,(ECC)4,(,TEM),Z-contrast,ECC,Z-contrast,ECC,BSEECC2SEMFig.2ThepositionofBSEdectectorandforewardscatteredBSEdetectorinSEM.212BSE+EBSD2,EBSD,EBSDEBSD,,EBSD,EBSD,EBSD,EBSDEBSD,EBSD,,EBSD737J.Chin.Electr.Microsc.Soc.29,,,EBSD,3a,,,3b,,EBSDEBSD(4)EDS,,,ECC,,3a:(Bar=20Lm);b:(a)(Bar=10Lm)Fig.3Theabnormalmicrostructureinthetransversesectionofhypereutectoidstee.la:TheforwardscatteredBSEimageofabonormalmicrostructrue(Bar=20Lm);b:TheforwardscatteredBSEmiageofthewhiteframeinmiage(a)(Bar=10Lm).4a:EBSD(Bar=20Lm);b:EBSD(Bar=20Lm);c:(Bar=10Lm);d:15bEBSD(Bar=10Lm)Fig.4Theabnormalmicrostructureinthetransversesectionofhypereutectoidstee.la:TheforwardscatteredBSEimagea:TheforwardscatteredBSEimagebeforeEBSDmapping(Bar=20Lm);b:TheforwardscatteredBSEimageafterEBSDmapping(Bar=20Lm);c:ThequalitymapofEBSP(indexqualityimage)(Bar=10Lm);d:EBSDmapwithboundarylargethan15b(Bar=10Lm).7381:EBSDEBSD5,,,,EBSD,,EBSD,,EBSD,5380e50h(Bar=10Lm)a:;b:EBSDFig.5Themicrostructuremiagesofcoldrolledhighpuritynickelsampleafterannealingat380eand50hours(Bar=10Lm).a:BSEimage;b:TheforwardscatteredBSEimageafterEBSDmapping.3EBSDEBSD:[1].[J].,2005,10:205-210.[2]TommasiA,GibertB,SeipoldU,MainpriceD.Anisotropyofthermaldiffusivityintheuppermantle[J].Nature,2001,411:783-786.[3]BystrickyM,KunzeK,BurlineL,BurgJP.Highshearstrainofolivineaggregates:rheologicalandseismicconsequences[J].Science,2000,290:1564-1567.[4],,,,.EBSDZr[J].,2008,27(6):487-490.[5],,.[J].,2008,27(6):506-511.[6]JoyDC,NewburyDE,DavidsonDL.Electronchannellingpatternsinthescanningelectronmicroscope[J].JApplPhys,1982,53:R81-R122.739J.Chin.Electr.Microsc.Soc.29*CorrespondingauthorApplicationofEBSDtechniquecombinedwithbackscatteredelectronimaginginmaterialscienceGUONing,HUANGTian-lin,ZHOUZheng,LUANBa-ifeng,LIUQing*(CollegeofMaterialsScienceandEngineering,ChongqingUniversity,Chongqing400044,China)Abstract:Thispapersystematicallyexpoundedtheadvantagesofelectronbackscatterdiffraction(EBSD)techniquecombinedwithbackscatteredelectronimaging(BSEI)technologyinthematerialsresearcheswithtwoexamplesoffindingdefectmicrostructuresinhpereutectoidsteelwirerodsandrecrystallizedgrainsfromdeformedstructuresinannealingsampleofcoldrolledhighpuritynicke.lBSEimagingtechniqueisusedfirsttoobservethegrainsizeandfinddefects,deformationzonesandrecrystallizedgrainsandotherareasofinterest,thenEBSDtechniqueisusedtochacracterizethecrystallographicorientationoftheinterestregionsinareasonablestepsize.EBSDtechniquecombinedwithBSEimagingtechnologyisaveryusefulmethodformaterialcharacterization.Keywords:EBSD;BSE;ECC;SEM;microstructure740