基于线性霍尔传感器的智能阀位变送器的设计

杭州电子科技大学硕士学位论文基于线性霍尔传感器的智能阀位变送器的设计姓名：黄明申请学位级别：硕士专业：控制理论与控制工程指导教师：尚群立20091201—IVDCS120160mm34420mA420mA1.A13912.A13913.A/DD/A—VLCD420mA1234—VIABSTRACTMeasuringinstrument,DCScontrolsystem,actuator,asthreeindustrialautomationbasicequipments,separatelyaccomplishingparameterdetection,calculationandcontrol,regulationandexecution,deeplyinfluenceproduction’squality,availability,safetyandenvironmentprotection,andtheirstechnologylevelbecomeoneofdecisivefactortoflowindustrydevelopment.Theactuator,astheperformanceterminationpartofthecontrolsystem,controllingtechnicsparameterviaregulatingmediumflux,makesagreatimpactonregulatorqualityandsafetyperformance.Presently,actuatorwithpoortechnologylevelbecomebottleneckofautomationtechnologydevelopment,almostallintelligentactuatorsareimport,whichishighlyregardednow.Howtomeasurestemdisplacementaccuratelyisanimportantprobleminthecontrolofactuator.Solution:intelligentvalvetransmitter.Therearethreesettingsasfollowsweneedtoconsider:circumstanceextremeinvibrationandhigh/lowtemperature,movinginpositiveandinversefrequently,largemeasurescale.Theintelligenttransmittermustmeetfollowingrequirements:1no-contact(therearenotouchingpartsbetweentheinstrumentandvalvestem),isolatinglocalecircumstanceandmaximizinganti-jammingability.2Largemeasurement,realizingmeasurerangefrom0to160mmtosatisfyalltypesofactuatorsapplied.3Lowconsumption,becauseofobtainingpowerfromloop-route.4Standardtransmitterwithhighprecisionandlowprice,utilizing4-20mAstandardoutputsignaltothecompatibilityandreciprocationamongalltypesofinstrumentsandequipments.Atpresent,manyplantsabroadprovideintelligentvalvetransmitter,however,theresearchonitisimmatureinChina.Itissignificanttoinvestigateandexploitintelligenttransmitternow.Themaintaskistodesignintelligentvalvetransmittersatisfiedwithaboverequirements,whichincludesfunctions:measurethestemdisplacementwhenmoving,dealwithnonlinearity,calculatepercentageofdisplacement,andthenconvertitto4-20mAstandardcurrentoutput.Themainworksinthisthesisaresummarizedasfollows:Thecharacteristicanddevelopmentoftransducer,transmitterandintelligenttransmitterarestudied;Theprincipleofvalvepositionerisanalyzed;Severalcommondisplacementmeasuremethodsarediscussed;Atlast,incombinationwithrealityapplication,thelinearHallsensorA1391isestablishedasnon-contactdisplacementmeasuretransducer.—VIITheprincipleofA1391isstudiedindetail;Thecommonlyusedlinearmeasureschemesareintroduced;Theauthorpresentstwonewmeasureschemes,andthenestablishesanonlinearmeasureschemeaslastscheme,accordingtotherequirementofthethesisandrealityapplication.Thereby,theauthordesignsameasuresetup,thenexpatiatesitsmeasureprincipleandmethod.Theintelligentvalvetransmitter,onthebaseofdeepanalysiswithmeasureprinciple,isdesigned.Itincludessoftwareandhardwaredesign.Hardwaredesignismainlytorealizefunctionssuchassignalamplifier,A/DorD/Aconverter;Softwaredesignismainlytosample,dealwithnonlinearity,calculatedisplacementpercentageanddisplay.Eachpartofhardwaredesignislowpowerconsumption.Thedetaileddesignmethodandimportantpartsthatshouldbepaidattentiontoaregiven.Basedonresearchondifferenttheoreticalpercentagecountmethodsatdifferentsituation,softwareprogramisaccomplished.Withtimesampling,itcansensesvalvedisplacementceaselessly.Atlast,itdisplaysthepercentageonLCDandprovidesastandard4-20mAsignaloutputforpositionverification.Thefinaltestresultsindicatethatthisintelligentvalvedisplacementtransmitterachievemeasure,calculationanddisplayaccurately,alsoitcanbeutilizedtoothernon-contactdisplacementmeasure.Thekeytechnologiesandinnovationpointsofthisdesignofsmarttransmitter:1Designnovelmagneticsteeltogainalawofmagneticfielddistribution;2Distributionofmagneticfieldonthenon-linearsinefitting,torealizenon-linearmethodofthelinearHallsensormeasurements;3Toovercomethemeasurementerrorscausedbyinstallationlocation,realizeadaptivefunctionofthetransmitter;4Usingvoltageisolationschemetoachievethesignaltransmissionoflocationwithtwowires.Keywordsintelligenttransmittervalvepositionernon-contactdisplacementmeasure—III12√—111.1[1][2]1.1epqfyzx+1.1yxeqf—2PID[3]420mA(010mA)/0.020.1MPa[4][5][6][7]p1p1.2HART[8]FF[9]—31.2420mA5mm160mm5mm160mm1.2()1.2.11.31.3infffURRRRRRRinURR//RR//RfRoutU×−+×−+=20001.1Rf()R0()R()L0Lr=R/R0Kf=Rf/R0—4ffinoutKrKrrUU21−+=1.2Uin2.5250mm0.1%[10][11]1.2.2dSCε=1.3S(m2)ε(F/m)d(m)dCS1)2)3)0.01um[12][13]1.2.3MM[14]—51.41.412e1e2e1e2e00e1e2e0[[15][16][17]1.2.41.5[18]HH'I2I1X1.5ρµtxωρµtωx[19][20]—61.2.5(AMRAnisotropicMagnetoresistance)[21]1.6(B)(M)(I)θ1.61.2.6107−m[22][23]1.2.71.7—71.7[24][25]500mm[26]AllegroA139X—81.34~20mA20~100kPa[28]1.3.1[27]1.3.2[29][30][31]()()()—91.8t2t5y(tp)y()Tttp0.1y0t11xOt1.8Ty(∞)63%tτy(∞)10%90%t5t295%98%σ1.3.3[32]—10()1.41.4.1420mA010mA[33][32]—1125±1±0.2%±0.2%101.6D/A1.91.4.21.9—121.4.3Honeywell1983ST30001989,Rosemount1151Smart,MooreMycroXTC,LeeEngineeringSmarLD301ABBBaileyFSKYOKOGAVABRAIN,FFPROFIBUS-PADCSA/DD/A[31]ADIMooreMycroXTCLeeEngineeringSmarLD301DCSDCSDCSPID21Sensirion(CMOS)CMOSens®HoneywellAtmelFingerChipTMVeridicom—13(ImageSeekTM)US0012(FLT