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Powerandproductivityforabetterworld™High-powersemiconductorsProductcatalog2015Productcatalog|ThisisABBSemiconductors03ThisisABBSemiconductorsABB’ssuccessstoryinpowerelectronicsbeganmorethan100yearsagowiththeproductionofmercury-arcrectifiersinSwitzerland.Overthepast60yearsABBhasplayedapivotalpartinthedevelopmentofpowersemiconductorsandtheirapplications.ABBisaleadingsupplierofhigh-powersemiconductorswithproductionfacilitiesinLenzburg,Switzerland,andPrague,CzechRepublic,aswellasanewresearchlaboratoryforwidebandgapsemiconductorsinBaden-Dättwil,Switzerland.Exceedingqualityrequirements,guaranteeingreliabilityexpectationsandperpetualpioneeringareourdistinctions.ThisproductcatalogprovidesanoverviewofABB’sfullrangeofbipolarandIGBThigh-powersemiconductors.Formoreinformationpleasecontactusorvisit’shigh-powersemiconductorsarekeycomponentsinavarietyofdemandingapplicationsinmarketslikepowertransmission&distribution,industrial,tractionandrenewableenergy.CustomersrelyonABB’shighqualitypowersemiconductorproductsandusetheminapplicationsinpowerrangesfrom100kWto10GW.Applications04Applications|Productcatalog11421Powertransmissionanddistribution(HVDC,FACTS,STATCOMandothers)Industry(mediumandlowvoltagedrives,softstarters,UPSs,high-powerrectifiers,excitationsystemsandothers)Traction(mainandauxiliarydrives,tracksidepowersupply)Renewableenergy(convertersforpumpedhydro,windturbinesandsolar)Productcatalog|Applications0534123441206ProductcatalogProductcatalog|Contents07ContentsIntroductionThisisABBSemiconductorsApplicationsIGBTdiesandmodulesIGBTanddiodediesHiPakIGBTanddiodemodulesStakPakIGBTmodulesDiode,thyristor,IGCTandGTOpress-packsDiodesThyristorsIntegratedgate-commutatedthyristors(IGCTs)Gateturn-offthyristors(GTOs)SiliconsurgevoltagesuppressorsTestsystemsFurtherinformationCertificatesDocumentationPerpetualinnovationPartnumberingstructureSymbolsWorldwidedistributors348121618324448525456606264687008IGBTanddiodedies|ProductcatalogIGBTanddiodediesWhenlookingforchipsets,ABB’sIGBTchipswithaccompanyingdiodes,thatfeaturehighestswitchingperformance,ruggednessandreliability,arecertainlythepreferredchoice.ABBSemiconductors’SPT(SoftPunchThrough)chipsetsandtheirimprovedversionswithlowerlosses(SPT+andSPT++)areavailableat1,200Vand1,700V.Theyfeaturehighestoutputpowerperratedampereduetoamoderatechipshrinkageandthuslargerdieareacomparedtoothers.Typicalapplicationsfor1,200Varepowerconvertersforindustrialdrives,solarenergy,batterybackupsystems(UPS)andelectricalvehicles.Applicationsfor1,700Valsoincludeindustrialpowerconversion&drives,windturbinesandtractionconverters.ABB’snewlyintroduced1,700VSPT++chipsetistheworld’sfirst1,700Vchipsetthatoffersanoperationaljunctiontemperatureofupto175°C.ThisallowsthemoduledesignertoincreasethepowerdensityoftheIGBTmodulessignificantly.PartnumberThicknessμmTypeSizeAxBmmVRRM(V)1.2kV5SLY76E12005SLY86E12005SLY76F12005SLY86F12005SLY76G12005SLY86G12005SLY76J12005SLY86J12001.7kV5SLY86E17005SLY86F17005SLY86G17005SLY86J17005SLY12J17005SLY86M17005SLY12M17005SLZ86J1700SPT+SPT+SPT+SPT+SPT+SPT+SPT+SPT+SPT+SPT++6.3x6.37.4x7.48.4x8.410.0x10.06.3x6.37.7x7.78.6x8.610.2x10.213.6x13.610.2x10.2350350350350390390390390390370IF(A)VF(V)typ.125°CMax.diesperwafer(W)ortray(T)361(W)257(W)198(W)137(W)326(W)237(W)188(W)131(W)36(T)69(W)25(T)131(W)1200120012001200170017001700170017001700507510015050751001503001501.851.851.851.852.12.12.12.12.11.75*contactfactory*NewDiodediesProductcatalog|IGBTanddiodedies09DiodediesIGBTdiesBAEmitterBGAPartnumberThicknessμmTypeSizeAxBmmVCES(V)1.2kV5SMY76H12805SMY86H12805SMY76J12805SMY86J12805SMY76K12805SMY86K12805SMY76M12805SMY86M12801.7kV5SMY86G17215SMY86J17215SMY12J17215SMY86K17215SMY12K17215SMY86M17215SMY12M17215SMY86M1730SPT+SPT+SPT+SPT+SPT+SPT+SPT+SPT+SPT++9.1x9.110.2x10.211.2x11.913.5x13.58.6x8.610.1x10.111.4x11.413.6x13.613.6x13.6140140140140209209209209190IC(A)ICM(A)Max.diesperwafer(W)ortray(T)166(W)130(W)98(W)71(W)186(W)132(W)36(T)102(W)36(T)69(W)25(T)69(W)12001200120012001700170017001700170057751001505075100150150114150200300100150200300300VCEsat(V)typ.125°C2.12.12.12.23.03.03.03.02.55*contactfactoryPleaserefertopage64forpartnumberingstructure.*NewIGBTdies10IGBTanddiodedies|ProductcatalogProductcatalog1112HiPakIGBTanddiodemodules|ProductcatalogHiPakIGBTanddiodemodulesDemandinghigh-powerapplicationssuchastractioninverters,mediumvoltagedrives,windturbines,HVDCorFACTSarelookingforthehighestreliabilityIGBTmodules.ABB’sHiPakfamilyofIGBTmodulesisthebestfittodemandingapplications,continuingtosetnewstandardsofrobustness.ABB’sHiPakIGBTmodulesareavailablefrom1,700Vto6,500Vinvariousconfi-gurations.Theyallfeaturelowlossescombinedwithsoft-switchingperformanceandrecord-breakingSafeOperatingArea(SOA).ABB’slatestIGBTmoduleisthe3,300V/500AdualHiPak.Multi-levelvoltage-sourceSVC(StaticVARCompensation),thatcompensatesflickerfromsteelsmelters,isoneexemplaryapplicationthattakesadvantageofthisinnovativeHiPakIGBTmodule.ToeasetheselectionoftheHiPakmodulethatbestfitstoyourapplication,ABBSemiconductorsint