SI2323DS

FEATURES
TrenchFETPowerMOSFETAPPLICATIONS
LoadSwitch
PASwitchSi2323DSVishaySiliconixNewProductDocumentNumber:72024S-22121—Rev.B,25-Nov-02(D-S)MOSFETPRODUCTSUMMARYVDS(V)rDS(on)(
)ID(A)0.039@VGS=-4.5V-4.7-200.052@VGS=-2.5V-4.10.068@VGS=-1.8V-3.5GSDTopView23TO-236(SOT-23)1Si2323DS(D3)**MarkingCodeABSOLUTEMAXIMUMRATINGS(TA=25CUNLESSOTHERWISENOTED)ParameterSymbol5secSteadyStateUnitDrain-SourceVoltageVDS-20Gate-SourceVoltageVGS
8Va,bTA=25C-4.7-3.7ContinuousDrainCurrent(TJ=150C)a,bTA=70CID-3.8-2.9PulsedDrainCurrentIDM-20AContinuousSourceCurrent(DiodeConduction)a,bIS-1.0-0.6TA=25C1.250.75MaximumPowerDissipationa,bTA=70CPD0.80.48WOperatingJunctionandStorageTemperatureRangeTJ,Tstg-55to150CTHERMALRESISTANCERATINGSParameterSymbolTypicalMaximumUnitt5sec75100MaximumJunction-to-AmbientaSteadyStateRthJA120166C/WMaximumJunction-to-Foot(Drain)SteadyStateRthJF4050C/WNotesa.SurfaceMountedon1”x1”FR4Board.b.Pulsewidthlimitedbymaximumjunctiontemperature.Si2323DSVishaySiliconixNewProduct—Rev.B,25-Nov-02SPECIFICATIONS(TJ=25CUNLESSOTHERWISENOTED)LimitsParameterSymbolTestConditionsMinTypMaxUnitStaticDrain-SourceBreakdownVoltageV(BR)DSSVGS=0V,ID=-250A-20Gate-ThresholdVoltageVGS(th)VDS=VGS,ID=-250A-0.40-1.0VGate-BodyLeakageIGSSVDS=0V,VGS=8V100nAVDS=-16V,VGS=0V-1ZeroGateVoltageDrainCurrentIDSSVDS=-16V,VGS=0V,TJ=55C-10AOn-StateDrainCurrentaID(on)VDS-5V,VGS=-4.5V-20AVGS=-4.5V,ID=-4.7A0.0310.039Drain-SourceOn-ResistancearDS(on)VGS=-2.5V,ID=-4.1A0.0410.052
VGS=-1.8V,ID=-2.0A0.0540.068ForwardTransconductanceagfsVDS=-5V,ID=-4.7A16SDiodeForwardVoltageVSDIS=-1.0A,VGS=0V0.7-1.2VDynamicbTotalGateChargeQg12.519Gate-SourceChargeQgsVDS=-10V,VGS=-4.5VID-4.7A1.7nCGate-DrainChargeQgdID-4.7A3.3InputCapacitanceCiss1020OutputCapacitanceCossVDS=-10V,VGS=0,f=1MHz191pFReverseTransferCapacitanceCrss140Switchingctd(on)2540Turn-OnTimetrVDD=-10V,RL=10
4365td(off)ID-1.0A,VGEN=-4.5VRG=6
71110nsTurn-OffTimetf4875Notesa.Pulsetest:PW300sdutycycle2%.b.ForDESIGNAIDONLY,notsubjecttoproductiontesting.c.Switchingtimeisessentiallyindependentofoperatingtemperature.Si2323DSVishaySiliconixNewProductDocumentNumber:72024S-22121—Rev.B,25-Nov-02(25CUNLESSNOTED)03006009001200150018000481216200481216200.00.51.01.52.02.50.000.030.060.090.120.15048121620048121620012345012345036912150.60.70.80.91.01.11.21.31.41.5-50-250255075100125150VGS=5thru2.5V25CCrssCossCissVDS=6VID=4.7AVGS=4.5VID=4.7AVGS=4.5VVGS=2.5V1V125C1.5VOutputCharacteristicsTransferCharacteristicsGateChargeOn-Resistancevs.DrainCurrentVDS-Drain-to-SourceVoltage(V)-DrainCurrent(A)IDVGS-Gate-to-SourceVoltage(V)-DrainCurrent(A)ID-Gate-to-SourceVoltage(V)Qg-TotalGateCharge(nC)VDS-Drain-to-SourceVoltage(V)C-Capacitance(pF)VGS-On-Resistance(rDS(on)
)ID-DrainCurrent(A)CapacitanceOn-Resistancevs.JunctionTemperatureTJ-JunctionTemperature(C)(Normalized)-On-Resistance(rDS(on)
)VGS=1.8V2VTC=-55CSi2323DSVishaySiliconixNewProduct—Rev.B,25-Nov-02TYPICALCHARACTERISTICS(25CUNLESSNOTED)-0.2-0.10.00.10.20.30.4-50-250255075100125150ID=140A1.01.20.000.030.060.090.120.150123450.11020ID=4.7A0.010161224106000.10.00.20.40.60.8TJ=150CThresholdVoltageVariance(V)VGS(th)TJ-Temperature(C)Power(W)Source-DrainDiodeForwardVoltageOn-Resistancevs.Gate-to-SourceVoltageSinglePulsePower-On-Resistance(rDS(on)
)VSD-Source-to-DrainVoltage(V)VGS-Gate-to-SourceVoltage(V)-SourceCurrent(A)ISTime(sec)810100TA=25C1TJ=25CSafeOperatingAreaVDS-Drain-to-SourceVoltage(V)10010.11101000.0110TA=25CSinglePulse-DrainCurrent(A)IDP(t)=10dc0.1IDMLimitedID(on)LimitedrDS(on)LimitedBVDSSLimitedP(t)=1P(t)=0.1P(t)=0.01P(t)=0.001P(t)=0.0001ID=2ASi2323DSVishaySiliconixNewProductDocumentNumber:72024S-22121—Rev.B,25-Nov-02(25CUNLESSNOTED)NormalizedThermalTransientImpedance,Junction-to-AmbientSquareWavePulseDuration(sec)NormalizedEffectiveTransientThermalImpedance210.10.0110-310-211060010-110-4DutyCycle=0.50.20.10.050.02SinglePulse1001.DutyCycle,D=2.PerUnitBase=RthJA=120C/W3.TJM-TA=PDMZthJA(t)t1t2t1t2Notes:4.SurfaceMountedPDM