analogLayout

EmadSemiconCo.(AliDaneshfar)AnalogCMOSICDesign–SharifUniversitySayyedMojtabaAtarodiANALOGLAYOUTByAliDaneshfar1383-AzarEmadSemiconCo.(AliDaneshfar)AnalogCMOSICDesign–SharifUniversitySayyedMojtabaAtarodiOutline•LayoutOverviewandDesignRules•Devices•Matching•Noiseconsiderations•LatchUp•Antenna•ESD•PADsandPackagingEmadSemiconCo.(AliDaneshfar)AnalogCMOSICDesign–SharifUniversitySayyedMojtabaAtarodiLayoutOverviewandDesignRulesN-WELLandP-WELLlayoutwaferEmadSemiconCo.(AliDaneshfar)AnalogCMOSICDesign–SharifUniversitySayyedMojtabaAtarodiACTIVEorDIFFUSIONlayoutwaferBird’sbeakEmadSemiconCo.(AliDaneshfar)AnalogCMOSICDesign–SharifUniversitySayyedMojtabaAtarodiGATE(POLY1)layoutwaferEmadSemiconCo.(AliDaneshfar)AnalogCMOSICDesign–SharifUniversitySayyedMojtabaAtarodiPPLUSLateraldiffusionwaferlayoutEmadSemiconCo.(AliDaneshfar)AnalogCMOSICDesign–SharifUniversitySayyedMojtabaAtarodiNPLUSWellcontactwaferlayoutEmadSemiconCo.(AliDaneshfar)AnalogCMOSICDesign–SharifUniversitySayyedMojtabaAtarodiCONTACTlayoutwafer•Contactsmustbeasseparatesquaresnotacontinuousrectangle.•Usemaximumpossiblecontacts.•Donotcontactovergate.EmadSemiconCo.(AliDaneshfar)AnalogCMOSICDesign–SharifUniversitySayyedMojtabaAtarodiMETAL1layoutwaferEmadSemiconCo.(AliDaneshfar)AnalogCMOSICDesign–SharifUniversitySayyedMojtabaAtarodiVIAlayoutwaferEmadSemiconCo.(AliDaneshfar)AnalogCMOSICDesign–SharifUniversitySayyedMojtabaAtarodiMETAL2layoutwaferForAnalogdesign,donotrouteovergate.EmadSemiconCo.(AliDaneshfar)AnalogCMOSICDesign–SharifUniversitySayyedMojtabaAtarodiIsolatedNMOSinaP-Substrate(usefulinRFapplications)Implementingaretrogradewell(R-well)orP-typewellintheN-well.EmadSemiconCo.(AliDaneshfar)AnalogCMOSICDesign–SharifUniversitySayyedMojtabaAtarodiSilicidationsource/drainpolysiliconmetalspacersilicidesilicideprocesspolycideprocessmolybdenumprocesssalicide(selfalignedpolycide)processEmadSemiconCo.(AliDaneshfar)AnalogCMOSICDesign–SharifUniversitySayyedMojtabaAtarodiDevices•PMOS•NMOS•BJT•DIODE•RESISTOR•CAPACITOR•INDUCTOREmadSemiconCo.(AliDaneshfar)AnalogCMOSICDesign–SharifUniversitySayyedMojtabaAtarodiPMOSDIFFNWELLCONTACTPOLY1PPLUSMETAL1POLY2NPLUSEmadSemiconCo.(AliDaneshfar)AnalogCMOSICDesign–SharifUniversitySayyedMojtabaAtarodiNMOSDIFFNWELLCONTACTPOLY1PPLUSMETAL1POLY2NPLUSEmadSemiconCo.(AliDaneshfar)AnalogCMOSICDesign–SharifUniversitySayyedMojtabaAtarodiSplitlargeWtransistorsintosmallerWtransistors•Evensplittingispreferred.•Splittingresultsin:¾Smallerarea.¾Optimizinggateresistance.¾ReducingS/Djunctionparasiticcapacitance.EmadSemiconCo.(AliDaneshfar)AnalogCMOSICDesign–SharifUniversitySayyedMojtabaAtarodi(a)Drainarea=0.67X(b)Drainarea=0.50XdraindrainStructure(b)ispreferred(evensplitting).EmadSemiconCo.(AliDaneshfar)AnalogCMOSICDesign–SharifUniversitySayyedMojtabaAtarodiReducinggateresistanceandNoiseNecessaryforverylargetransistors.EmadSemiconCo.(AliDaneshfar)AnalogCMOSICDesign–SharifUniversitySayyedMojtabaAtarodiSeriestransistorsEmadSemiconCo.(AliDaneshfar)AnalogCMOSICDesign–SharifUniversitySayyedMojtabaAtarodiVerticalPNPDIFFNWELLCONTACTPOLY1PPLUSMETAL1POLY2NPLUSEmadSemiconCo.(AliDaneshfar)AnalogCMOSICDesign–SharifUniversitySayyedMojtabaAtarodiRESISTORSPOLYSilicideNonsilicideN+(5±4Ω/…)P+(5±4Ω/…)N+(180±10Ω/…)P+(160±15Ω/…)“N+PolyNonsilicide”isthemostpreciseresistor.EmadSemiconCo.(AliDaneshfar)AnalogCMOSICDesign–SharifUniversitySayyedMojtabaAtarodiRESISTORS(continue…)DIFFSilicideNonsilicideN+(5±4Ω/…)P+(5±4Ω/…)N+(61±7.5Ω/…)P+(145±20Ω/…)(0.07Ω/…)NWELL(1100±400Ω/…)METALEmadSemiconCo.(AliDaneshfar)AnalogCMOSICDesign–SharifUniversitySayyedMojtabaAtarodiRESISTORS(continue…)DIFFNWELLPOLY1PPLUSMETAL1POLY2NPLUSCONTACTPolyresistorNWELLresistorR=Rs×(L/W)EmadSemiconCo.(AliDaneshfar)AnalogCMOSICDesign–SharifUniversitySayyedMojtabaAtarodi•Betterforpreciseresistors.•Uselargewidth(≥2um).•Uselargelength(Min.3†)EmadSemiconCo.(AliDaneshfar)AnalogCMOSICDesign–SharifUniversitySayyedMojtabaAtarodiRESISTORSinRFapplicationsVDDEmadSemiconCo.(AliDaneshfar)AnalogCMOSICDesign–SharifUniversitySayyedMojtabaAtarodiCAPACITORS•Poly–Poly~1fF/um2•Metal–Metal~1fF/um2•MOSgatecapacitanceC=Carea×Area+Cperimeter×PerimeterEmadSemiconCo.(AliDaneshfar)AnalogCMOSICDesign–SharifUniversitySayyedMojtabaAtarodiPrecisecapacitorEmadSemiconCo.(AliDaneshfar)AnalogCMOSICDesign–SharifUniversitySayyedMojtabaAtarodipolyMET1MET2MET3C1C2C3Ceq=C1+C2+C3Betweenallconductorandsemiconductorlayerstherearesmallcapacitorscalledparasiticcapacitors:surfacetosurface,edgetosurfaceandedgetoedge.EmadSemiconCo.(AliDaneshfar)AnalogCMOSICDesign–SharifUniversitySayyedMojtabaAtarodiINDUCTOREmadSemiconCo.(AliDaneshfar)AnalogCMOSICDesign–SharifUniversitySayyedMojtabaAtarodiMatching:MOS•EqualW•Sameorientation•SymmetryinX&Y(commoncentroidconfiguration)•DummygatesforoutsidetransistorsEmadSemiconCo.(AliDaneshfar)AnalogCMOSICDesign–SharifUniversitySayyedMojtabaAtarodiCommonCentroidConfiguration15AABBCCCCA:30/2B:30/2C:60/2dummydummyEmadSemiconCo.(AliDaneshfar)AnalogCMOSICDesign–SharifUniversitySayyedMojtabaAtarodiDIFFNWELLCONTACTPOLY1PPLUSMETAL1POLY2NPLUSAABBAA