阳极氧化铝薄膜厚度测试方法的研究

12Vol.24No.12200512ELECTRONICCOMPONENTS&MATERIALSDec.2005219.1=r12228.0nmH3PO45080nm1.219O646.6A1001-2028200512-0064-03StudiesonTestingMeasuresoftheThicknessonAnodizedAluminaThinFilmLIDong-dong,ZHUXu-fei,MENGDa-wei,XIAOYing-hong(1.CollegaofMaterialsScienceandEngineering,ShanghaiJiaotongUniversity,Shanghai200030,China;2.ChemicalEngineeringDepartmentofNanjingUniversityofSci&Tech,Nanjing210014,China)Abstract:Itwasswiftlytoobtainthethicknessofaluminafilmbyusingofit’sdielectricpropertyandcapacitormodelwhichwasvalidatedbymeansofEM,electricquantityandvolt-ampereTheresultsshowthat,thethicknessofnaturaloxidefilmsisabout8.0nm;thethicknessofoxidefilmsformedinH3PO4solutionisvariedfrom50nmto80nm;Keywords:electronictechnology;anodicaluminumoxide(AAO)oxidefilmdielectricpropertythicknessAnodizedAluminumOxideAAO(1091012cm–2)(10100nm)(10100µm)(10100nm)(10100V)[1][210]11-SY98[11]4.710–3A/cm222005-07-03503730191964Tel:[phone]E-mail:[e-mail]19801Fig.1AschematicviewoftheanodicaluminathinfilmTESTING1265t1796500MQ=ItQ=ρη9650017ItM=δρ=Mρηδ9650017It=Urδ=dSCr0εε=[12]210100nm[13]2.1EM(SEM)(TEM)AFMdND122.2MAl2O3123δρ455ρ=2.95g/cm3,Al2O3·xH2OAlO(OH)Al2O3η70%80%75%2.3[14](20mA)R(R=U/I)R=ρ·δ/Sr62.4C7ε0=8.8510–12F/m[15]Al2O38.41.2µmεr9.8S4.20cm2399.99200µm7mm5005h2%()NaOH3min(60)662005δδδ406080100120140120110100908070605040/nmt/s124(δ1)(δ2)Fig.4Thicknessofbarrierlayer-timerelationcalculatedbythemeansofcapacitance(δ1)anddielectricproperty(δ2)respectivelyµy=1.219x-3.459δ4045505560657075802.62.42.22.01.81.61.41.2U/VC–1/F–19080706050404550556065707580y=1.219x–3.459(a)(b)5(a)(b)Fig.5Thereciprocalfilmcapacitance-voltagerelation(a)andthedevelopmentrate(b)ofthebarrierlayerinphosphoricacidsolution/nmU/V5%30V25FEISIRION()PAD500KIKUSUIELECTRONICSCORPTH2615BSY98ZXF0444.13600s63VSEMd=150nmN=4109/cm2140nm70nm4.21250556065707580859095130600sSY981U-t4(50130s)((7))(δ1)((15))(δ2)4δ1δ20130sηδ25(a)C–1U(6)r=1.2195(b)C=4.55µFδ8.0nmMTextor[16]512r=1.21938.0nmH3PO45080nm[1]PalibrodaEFarcasTLupsanAAnewimageofporousaluminiumoxide[J]MeterSciEng,1995,B32:1–5.[2]ThompsonGE.Porousanodicaluminafabricationcharacterizationandapplications[J].ThinSolidFilms,1997,297:192–201.[3]VorobyovaAI,SokolVA,OutkinaEA.SEMinvestigationofpillaredmicrostructuresformedbyelectrochemicalanodization[J].ApplPhys,1998,A67:487–492.[4],[J],2002,21(5):27–30.[5][J].,2002,332:148–151.[6],,,[J],2003,19(6):466–469.[7],,.[J].,2001,18(6):462–465.[8],,.[J].,2001,46(12):984–987.[9]SuiYCAcostaDRGonzález-LeónJA.etal.StructurethermalstabilityanddeformationofmultibranchedcarbonnanotubessynthesizedbyCVDintheAAOtemplate[J].PhysChemB2001105:1523–1527.[10]SaifurRahmanYangHongNanopillararraysofglassycarbonbyanodicaluminumoxidenanoporoustemplates[J].NanoLett,20033(4):439–442.[11],,.[J].,2001,20(2):8–9.[12][J]200033(1)43–45.[13],,,.[M].,1991.17–82.[14],.[M].,1993.350–351.[15]MoonSung-moPyunSu-.Growthmechanismofanodicoxidefilmsonpurealuminiuminaqueousacidicandalkalinesolutions[J].JSolidStateElectrchem1998(2):156–161.[16]TextorMAmstutzMSurfaceanalysisofthinfilmsandinterfacesincommercialaluminiumproducts[J]AnalChimActa,1994,297:15–26.3600sSEMFig.3SEMmicrographofaluminasurfaceelectrolyzedfor600sinphosphoricacidsolution