二维黑磷的结构_制备和性能_袁振洲

Review*E-mail:[e-mail]16,2016;publishedMay4,2016.ProjectsupportedbytheNationalNaturalScienceFoundationofChina(NSFC)(Nos.51302081and61575010),theBeijingNovaProgram(No.Z141109001814053),theScienceandTechnologyCommissionofBeijingMunicipality(No.Z151100003315018),theOpensubjectofKeyLaboratoryofSemiconductorMaterialsScienceInstituteofSemiconductors,ChineseAcademyofSciences(No.KLSMS-1404)andtheFundamentalResearchFundsfortheCentralUniversities(No.222015Y-4006).(NSFC)(Nos.51302081,61575010)(No.Z141109001814053)(No.Z151100003315018)(No.KLSMS-1404)(No.222015Y-4006)488©2016ShanghaiInstituteofOrganicChemistry,ChineseAcademyofSciencesActaChim.Sinica2016,74,488—497化学学报 ACTACHIMICASINICA袁振洲a刘丹敏*,a田楠a张国庆a张永哲b(a100124)(b100124):,.,.,,.,,,..;;;;Structure,PreparationandPropertiesofPhosphoreneYuan,ZhenzhouaLiu,Danmin*,aTian,NanaZhang,GuoqingaZhang,Yongzheb(aBeijingKeyLaboratoryofMicrostructureandPropertiesofAdvancedMaterial,InstituteofMicrostructureandPropertyofAdvancedMaterials,BeijingUniversityofTechnology,Beijing100124)(bKeyLaboratoryofAdvancedFunctionalMaterials,EducationMinistryofChina,CollegeofMaterialsScienceandEngineering,BeijingUniversityofTechnology,Beijing100124)AbstractTwo-dimensional(2D)materialshaveattractedbroadinterestbecauseoftheirlow-dimensionaleffect,andblackphosphorushasbecomeamemberofthemduetothesuccessfulpreparation.Phosphorushasseveralallotropes,whitephos-phorus,redphosphorusandblackphosphorus.Blackphosphorusismostthermodynamicstableinthem.Blackphosphoruswasobtainedbyaphasetransitionfromwhiteorredphosphorusathighpressureandhightemperature.Itisanaturalp-typesemiconductorinwhicheachlayerisverticallystackedbythevanderWaalsforce.Thethicknessofblackphosphoruscanbescaleddowntotheatomiclayerscaleknownasphosphorenebymechanicalexfoliationorliquidexfoliation.Innowadays,pulsedlaserdeposition(PLD)hasalsobeenusedinsynthesisofphosphorenefilm.Comparedwithblackphosphorus,phos-phorene’sphysicalpropertieshavesignificantchanges.Thebandgapinbulkblackphosphorusis0.3eVandcanbeexpand-edto1.0to1.5eVdependingonthelayernumbers.Therangeofphosphorenebandgapcorrespondstoanabsorptionspec-trumbetweenvisiblelighttoinfrared.Moreover,thebandgapofphosphoreneisalsohighlysensitivetothestraineitherin-planeorout-of-plane.Thephosphorenebasedfieldeffecttransistor(FET)exhibitsahighmobilityandappreciablyhighon/offratios,andthemobilityisthicknessdependent.Unlikeothertwo-dimensional(2D)materials,phosphorenehasin-planeanisotropywhichissuitableforthedetectingofpolarizedlight.Hence,theuniquepropertiesinblackphosphorus,alongwithitshighcarriermobility,makeitasapromisingmaterialinelectronicapplications.Nevertheless,thepoorchemi-calandstructuralstabilityofblackphosphorusandphosphoreneraisesimportantconcerns.Inthepastcentury,thesynthesis,physicalproperties,anddeviceapplicationshavebeenextensivelyinvestigatedinvariousstudies.Inthisreviewarticle,alotofreferencesofblackphosphorusarecitedtointroducesystematicallytheresearchprogressesofstructureandpreparation,thestudyofmaterialpropertiesanddeviceperformance,thechemistryofthedegradationprocessandtheanti-degradationtreatments.Atlast,thedevelopmenttrendofphosphoreneismentioned.Keywords2Dsemiconductingmaterials;blackphosphorus;preparation;materialproperties;nanodeviceperformance1,.,[1]..,[2].,DOI:10.6023/A16010035化学学报 ActaChim.Sinica2016,74,488—497©2016ShanghaiInstituteofOrganicChemistry,ChineseAcademyofSciences[3].MoS2,MoS2,1.8eV[4].MoS2MoS2(108)[5].S,MoS2N[6].,,MoS2200cm2•V1•s1[7],MoS2[8]..,.,[9].286cm2•V1•s1,104[9].,,10nm,1000cm2•V1•s1[9].,,,.22.1[10].2050,[11].:.,,Cmca,a3.313Å,b10.473Å,c4.374Å.8,,.,,(1).,P33p,s-p.,,,[12].,Qiao[13],.3[14],AA,AB,AC,2.,Dai[14]AB,.,,1,Å.2.2,[15].1.(a),(b)(a),(c)(a)Figure1Layeredcrystalstructureofbulkblackphosphorus.(a)Sche-maticdiagramofBPcrystal,(b)Sideviewof(a),(c)Topviewof(a)2.(a),(c)(e)AA,AB,AC.(b),(d)(f)AA,AB,AC,R1,R2dint[14]Figure2Threestackingstructuresofbilayerphosphorene.(a),(c)and(e)arethetopviewofAA-,AB-andAC-stacking;(b),(d)and(f)arethesideviewofAA-,AB-andAC-stacking.R1,R2anddintdenotethetwotypesofPPbondlengthandinterlayerdistance,respectively[14]1(ab),(R1R2R2')(dint).:Å[14]Table1Optimizedlatticeconstants(aandb),bondlength(R1,R2andR2')andthenearestdistancebetweentheadjacentlayer(dint)ofbilayerphosphorenewiththreedifferentstackingorders.TheunitisÅ[14]abR1R2R2'dintAA4.5503.3262.2832.2432.2353.495AB4.5263.3312.2772.2422.2383.214AC4.5353.3242.2742.2382.2363.379,0.3eV[10a,14].,1.5eV[13],K.,[13,16],,.2.2.1层数与带隙的变化关系Liu[16a],Zhang[16f].a4.53Å,b3.36Å,c11.17Å,AB.,化学学报490©2016ShanghaiInstituteofOrganicChemistry,ChineseAcademyofSciencesActaChim.Sinica2016,74,488—497,:51,0.59eV1.51eV[13].,Ju[16g](110),100.11eV,.,Qiao[13]Ju[16g],,.2.2.2应力与带隙的变化关系MoS2[17],.,Rodin[18],,,.Peng[19],,Manjanath[20].[16g]10,,,,.Liu[16a],5%,,,1.0eV0.5eV;5%,,1.0eV1.2eV.(3).3x(Armchair)y(zigzag)[16a]Figure3Thestrainalongthex-andy-directionwithinamonolayer[16a]33.11914,Bridgman[21]1.2GPa200,8.0GPa[22],4.5GPa[23