电子器件灌封材料的现状及发展趋势

8320106ExperimentScienceandTechnologyVol18No13Jun12010:2010-03-22:(1968-),,,,(,610031):,,AlN,:;;;;:TQ32:C:1672-4550(2010)03-0020-04PresentSituationandDevelopmentTrendofPottingMaterialsUsinginElectronDeviceLUOGang(ChengduElectromechanicalCollegeAcademicAdministration,Chengdu610031,China)Abstract:Thispaperintroducesthekindsofpottingmaterialsforelectrondevices.Itelaboratesthecomponent,properties,applica2tionstatus,existingproblemsandmethodtoimprovethepropertiesofepoxypottingmaterialsandorganic2siliconpottingmaterials.Oneanalyzesthedefectsofthetraditionalpottingmaterialsandpointsoutthegoalandmeaningtoinvestigatetheinsulatingheatcon2ductionmaterials.Itusesorganic2siliconandinorganicfillingAlNpowderstofabricatethecompoundmaterials.Onepointsoutthede2velopmenttrendofpottingmaterialsforelectrondevice1Keywords:electrondevice;pottingmaterials;epoxy;organic2silicon;inorganicfilling1,,,,[1]24:(1);(2),;(3),,;(4),,,,,,8090(),[2],,,,,,:[3],,,211[4]A(F,A),,212,83:,21211[5-6](1)CTBNHT2BNHTPB(2)2090,(3),,(4),,,,21212,,;,;,Tg5070,;SiO2Al2O3AlN,21213;,3[7-9]311(1)(-60320),(2),(3),(4),,(5),4(6),,,148000g/mol,,:,n;R;R,,,Si-O,,450kJ/mol,312,2:(1)(RTV);(2)(ARC)ARC,,,012,RTV,,,,(),ARC2ARC:TASMDAS31211(LTV)LTV,,,,31212GN521,GN522,GN581,(1):17MV/m,11013,3tan510-4(2):,,-,,-60200(3),,,1220106,(4):,,,,,,(5):4,,,,,,411,,,,:(1),(2),(3),(4),,Al2O3AlN25,:Al2O325W/mk;AlN120250W/mkAI2O3,12AlN78W/mk41241211,,,,,,[10],:1/CP55005800GB1232-76/Wm-1-101625TC-32/(cm)9181013GB1410/2101013GB1410/(MVm-1)1719GB/T696-81(89)/1MHz3198GBT694-81(89)/1MHz010036GBT694-81(89)/MPA214GB528-76/()94GB528-76/(kNm-1)312GB530-7651GB531-76/(kgm-3)1168GB533-762/min/()/()0191955351106358207463308463308463(1)(2),(3)(4)(5),(),41212(1)(2),,;(3),,(33)2283:;,,5,,,;,,,[1]1[M]121:,20091[2],1[J]1:,2006,34(4):37-391[3]1[J]1,2007,12(5):142-1441[4],,,1[J]1,2008,6(3):27-291[5]1[J]1,2009,7(3):29-311[6],1[J]1:,2003,24(4):65-661[7]1[J]1,2005,18(4):48-511(22),,41213,,,10,20,5,,G148G-5141214,5,,,,,,PCBSMTMCM,,[11][1]1[J]1,2002(3):123-1261[2]1[J]1,2002(6):46-481[3],1[J]1,2004,19(4):18-211[4],,1[J]1,1999(4):1-21[5],1[J]1,2003,31(10):48-501[6],,1[J]1,2002,31(3):40-441[7]1[J]1,2004,25(1):30-321[8]NingYuebin,LokeYan,McKinnonGraham1Fabrica2tionandcharacterizationofhighg2force,siliconpiezore2sistiveaccelerometers[J]1SensorsandActuatorsA,1995,48:55-611[9],1[J]1,2002(2):37-521[10],1[J]1,2006(8):41-431[11],,1[J]1,2003(10):31-34133