电子科学与技术专业英语

1.1Energybandsandcarrierconcentration1.1.1semiconductormaterialsNewwords:Semiconductorn.半导体;conductivityn.导电性;Resistivityn.电阻率;impurityn.杂质;Bipolartransistor双极型晶体管;rectifiern.整流器;Photodiode光电二极管;devicen.装置；策略；图案;leakagecurrents泄漏电流magneticadj.有吸引力的；有磁性的；Quartzn.石英;aluminumn.铝;illuminationn.照明；[光]照度;siliconn.硅；硅元素;galliumn.[化学]镓galliumnitride氮化镓；磷化镓germaniumn.锗（32号元素，符号Ge）;galliumarsenide砷化镓;arseniden.[无化]砷化物;carbonn.碳；复写纸adj.碳的；boronn.[化]硼;nitrogenn.[化]氮;phosphorusn.磷;sulfurvt.用硫磺处理n.硫磺；硫磺色;silicondioxide[无化]二氧化硅ComprehensionTheconductivitiesofasemiconductorisgenerallysensitivetotemperature,illumination,magneticfield,andminuteamountofimpurityatoms.半导体的导电性一般对温度敏感、照明、磁场与少量的杂质原子存在引起的。Germaniumprovedunsuitableinmanyapplicationbecausegermaniumdevicesexhibitedhighleakagecurrentsatonlymoderatelyelevatedtemperatures.锗被证明不适合许多应用,因为锗器件在只有轻度升高的温度时展出很高的泄漏电流。1.1.2CrystalStructureNewwords:Diagonaln.对角线；斜线adj.斜的;Latticen.格子；格架；晶格vt.使成格子状;unitcell[晶体]晶胞，[晶体]单胞；[晶体]单位晶格;reciprocaln.[数]倒数；adj.相互的；倒数的，彼此相反的cubic-crystal立方晶体;latticeconstant晶格常数；点阵常数;body-centeredcubic体心立方;Face-centeredcubic;diamondlattice金刚石点阵钻石格子金刚石晶格;tetrahedronn.[晶体]四面体;zincblendelattice闪锌矿晶格;tungstenn.[化学]钨;Cartesiancoordinates笛卡儿坐标Equidistantadj.等距的；距离相等的;Sodiumn.[化学]钠（11号元素，符号Na）;Millerindices密勒指数;ComprehensionThisstructurealsobelongstothecubic-crystalfamilyandcanbeseenastwointerpenetratingfccsublatticeswithonesublatticedisplacedfromtheotherbyonequarterofthedistancealongadiagonalofthecube.该结构也属于立方晶体家庭和可以被看作是两个面心立方晶格，其中一个子晶格沿另一个的对角线平移四分之一距离而构成的立方。Allatomsareidenticalinadiamondlattice,andeachatominthediamondlatticeissurroundedbyfourequidistantnearestneighborsthatlieatthecornersofatetrahedron.所有的原子都是相同的金刚石晶格,每一个原子在晶格中都有四个等距的最近邻居,处在四面体的四个角上。ExtracurricularReadingAsemiconductorisamaterialwithelectricalconductivityduetoelectronflow(asopposedtoionicconductivity)intermediateinmagnitudebetweenthatofaconductorandaninsulator.Thismeansconductivityroughlyintherangeof103to10−8Siemenspercentimeter.Semiconductormaterialsarethefoundationofmodernelectronics,includingradio,computers,telephones,andmanyotherdevices.Suchdevicesincludetransistors,solarcells,manykindsofdiodesincludingthelight-emittingdiode,thesiliconcontrolledrectifier,anddigitalandanalogintegratedcircuits.Similarly,semiconductorsolarphotovoltaicpanelsdirectlyconvertlightenergyintoelectricalenergy.半导体是一种物质,它由于电子流动而产生的电导率(相对于离子电导率)在导体和绝缘体之间的中间级。这意味着电导率大致范围为103到108西门子每厘米。半导体材料是现代的电子产品,其中包括收音机,计算机,电话,和许多其他的设备的基础。这样的设备包括晶体管、太阳能电池、多种二极管包括发光二极管,硅可控整流器、数字和模拟集成电路。同样,半导体太阳能光伏板直接转换光能为电能。1.1.3ValenceBondsNewwords:holen.洞，孔；洞穴，穴；突破口vt.凿洞vi.凿洞，穿孔;valenceelectron价电子;covalentbonding共价键；共价键结；共价结合;positivecharge[物]正电荷;deficiencyn.缺陷，缺点；缺乏；;fictitiousadj.虚构的；假想的；编造的；假装的;analogousadj.类似的；[昆]同功的；可比拟的ComprehensionEachelectronspendmostoftheirtimebetweenthetwonuclei.However,bothelectronsspendmostoftheirtimebetweenthetwonuclei.每一个电子把大部分时间花在两个细胞核之间。不管怎样,两位电子把大部分时间花在两个细胞核之间的。GaAshasaslightionicbondingforcethatisanelectrostaticattractiveforcebetweeneachGa-ionanditsforneighboringAs+ions,orbetweeneachAs+ionanditsfourneighboringGa-ions.砷化镓有轻微的离子键合力,是Ga-离子及其附近的As+离子之间的静电吸引力,或者是每个Ga+离子及其四个邻国Ga-离子之间的静电吸引力。Thisdeficiencymaybefilledbyoneoftheneighboringelectrons,whichresultsinashiftofthedeficiencylocation,asfromlocationAtolocationB.这个缺陷是由一个充满相邻的电子,有电子位置转移如从地点A移到地点B而产生的缺陷。1.16IntrinsicCarrierConcentration1.17DonorsandAcceptorsIntrinsicadj.本质的，固有的;impuritiesn.杂质（impurity的复数）;effectivedensityofstates有态密度;incrementaladj.增加的，增值的;donor施者;acceptor受者;extrinsicadj.外在的；外来的；非固有的;massactionlaw质量作用定律；agitationn.激动；搅动；煽动；烦乱;excitationn.激发，刺激；激励；激动;integratingn.集成化；综合化v.整合；积分；集成化（integrate的ing形式）;ComprehensionThisdensityn(E)isgivenbytheproductofdensityofallowedenergystatesperunitvolumeN(E)andbytheprobabilityofoccupyingthatenergyrangeF(E).这样的密度n(E)是由能量状态单位体积内所允许的浓度N(E)和占领能量范围的概率F(E)所得到的。TheelectrondensityintheconductionbandisgivenbyintegratingN(E)F(E)dEfromthebottomoftheconductionbandtothetopoftheconductionband.导带的电子密度是通过整合了N(E)F(E)dE从导带的底部到导带的顶部。Bycontrastmostofthoseareoccupiedbyelectrons.Thus,theprobabilityofanelectronoccupyingoneofthesestatesinthevalencebandisnearlyunity.与此形成鲜明对比的是他们大多数都是由电子所占用。因此,一个电子占领这些位置的其中一个的概率在价带中几乎是一致的。Forshallowdonorsinsiliconandgalliumarsenide,thereusuallyisenoughthermalenergygosupplytheenergyEDtoionizealldonorimpuritiesatroomtemperatureandthusprovideanequalnumberofelectronsintheconductionband.对于在硅和砷化镓中的浅的施者,通常是足够的热能去提供了能量ED使施主杂质在室温下电离,从而在导带中提供相等数量的电子。1.2CarrierTransportPhenomena1.2.1CarrierDriftNewwords:Equipartitionn.[物][化学]均分;impactionization[物]碰撞电离;meanfreepath[物]平均自由程;collisionn.（意见，看法）的抵触，冲突;Saturationn.饱和；色饱和度；浸透；磁化饱和;driftvelocity[电子]漂移速度Successionn.连续；继位；轮栽演替;sufficientlyadv.充分地；足够地;Injectionn.注射；注射剂；充血；射入轨道;Superimposedadj.[地物]叠加的；上叠的；重叠的;Netn.网；网络；净利；实价adj.纯粹的；净余的vt.得到；净赚；用网捕vi.编网;scatteringn.散射；分散v.散射；散布；驱散（scatter的ing形式）adj.分散的;mobilityn.移动性；机动性；[电子]迁移率;ComprehensionThethermalmotionofanindividualelectronmaybevisualizedasasuccessionofrandomscatteringfromcollisionswithlatticeatoms,impurityatoms,andotherscatteringcenters.一