IGBT过电压产生机理分析及RC缓冲电路的设计

27420114ElectricPowerScienceandEngineeringVol27,No4Apr.,201123IGBTRC姜栋栋,王烨,卢峰(,071003):由于IGBT经常工作于高频状态,因此对其关断过电压的抑制就显得尤为重要对IGBT关断过电压的产生机理进行了分析,对常用的3种缓冲电路进行简单介绍,并且重点对RC缓冲电路的工作原理及参数确定进行了理论分析搭建了用于测试IGBT动态特性的电路模型,并通过Multisim对RC缓冲电路进行了仿真与分析,验证了RC缓冲电路的吸收特性:RC;缓冲电路;IGBT;浪涌电压:TM921:A:2010-12-10:(1986),,,,Emai:[e-mail]0IGBT(InsulatedGateBipolarTransistor),,BJT()MOS(),MOSFETGTRGTR,,;MOSFET,,,IGBT,600V,[1]IGBT,,,IGBTkHz,,IGBT,,,,,kHz,,IGBT,,IGBT,,IGBT,IGBT,IGBTIGBT,1IGBT11IGBT11IGBTFig.1LocaloperatingcircuitofIGBTIGBT,,,,di/dt,,,,,IGBT,,242011Ucep=Uce+Ldi/dt(1):Ucep,V;Uce,V;L(),H;di/dtIGBT,A/s;12IGBT,IGBT(),(),IGBT,,,,di/dt,,,IGBT221,,,,,(Snubbercircuit),,,di/dtdu/dt,,,EMIdi/dt,22(a)C,,IGBT,,;,,IGBT,IGBT2(b)RC,,,,IGBT,,R,IGBT2(c)RCD,1,,,,IGBT,,,,,,,RC1/3[2]2(d),,,,,,C,,4,IGBTRC25C,,IGBT,,,,22,,,,RCIGBT,RC,C,,,,IGBT,CIGBTR,,,C,,,,RC=RCIGBT,1/3~1/53RCIGBT31IGBTIGBT,1,ic=iL=i0=I0,ics=ic,uL=uce=0,u0=Ud;IGBT,ic=iL=ics=0,uce=Ud,u0=0,,,IGBT,IGBTIGBTCs,icIGBT,ics,uce,CsI0,Csic,icsuceIGBT,,32(1)Ls,IGBT,Ls,,Eon,Ls,,(2),IGBT,Cs,CsU(3)IGBT,Cs,Csuce,(4)uceCs,I0,I0,uce,[3]4RC41RCIGBT,C,C,,,,,,,(kHz),,,262011:IGBT,T1;IGBTC0,,T2,,:Ls=(T22-T21)142C0(2)E1=12(Lp+Ls)I2(3):Lp;Ls;IE2=12CU2(4):C;U,U=Ucemax-Ud,,Ucemax,UdIGBTC,:12(Lp+Ls)I2=12CU2(5)C=(Lp+Ls)I2U2(6)42RCRC,=RC,RC,CR,,IGBTRCCIGBTE0=12CU2df(7):fE0=12(Lp+Ls)I20f(8):I0IGBTR,:P=12CU2df+12(Lp+Ls)I20f(9)RCIGBT,IGBT,CR,,C,RC,=RC1/4IGBT,C,,:R04C(10):0IGBTR,,IGBT,R,:R2L/C(11):LR2L/CR04C(12)5IGBT51IGBTRCRCIGBT,MultisimIGBTIGBTInternationalRectifierIRG4BC40SIGBT,:Vces=600V,Vce(on)typ=132V,Vge=15V,Ic=31A3RC,IGBTUce=492V,IGBT,,Uce44,IGBTRC27IGBT,(6)(12)20,12nF,RCIGBT,UceIGBT55UceFig.5VoltagewaveformofUcewithsnubbercircuit4,5,,Uce255V,RCIGBT,,IGBT,C,,CRIGBT,,,R,C,1~3112nFTab.1Statisticalresultsoftheabsorptioncapacityfixedinthe12nF/nF1212121212/2030506080/V255249257267285/V251276282313354220Tab.2Statisticalresultsoftheabsorptionresistancefixedinthe20/nF12202530/20202020/V255226216209/V251209199192330Tab.3Statisticalresultsoftheabsorptionresistancefixedinthe30/nF12202530/30303030/V249223215209/V2762182072061,,,,RCUce,,,,20~30,232030,,,1282011,,15nF,20,Uce6,76,7,52IGBTCRCDIGBT,,,CRCD2(a)C,4C,88CIGBT,,,CIGBTC,8CFig.8SimulationwaveformofCsnubbercircuit,IGBTIGBTIGBT,,,Uce,,21IGBT2(c)RCD,3RCD,99RCDFig.9SimulationwaveformofRCDsnubbercircuit9RCDUce,,,IGBTUce,IGBT,RCD,RCDRC,,Uce6IGBT,RC,4,IGBTRC29,RCIGBT,,RCLC,RC,,,,,R,C,,,,RC:[1],.[M].:,2008.[2],,.IGBT[J].,2009,33(10):914917.ZhangQuanzhu,HuangChengyu,DengYonghong.SimulationresearchfortheIGBTabsorbingcircuitsofinverter[J].ChineseJournalofPowerSources,2009,33(10):914917.[3].[M].:,2006.[4],,,.RC[J].,2008,(5):5152,70.YangFengbiao,YangYijun,YanYingmin,eta.lTheoptimumdesignofRCbufercircuit[J].Electricalswitch,2008,(5):5152,70.[5],,.IGBT[J].,2008,24(1):3740.LiuGuanq,iSunJinshu,iWanJun.StudyoninternalfeedbackcascadecontrolsystembasedonIGBTchopping[J].ElectricPowerScienceandEngineering,2008,24(1):3740.[6],,.IGBT[J].,1998,(3):4347.XuXiaofeng,LianJisan,LiFengxiu.AninvestigationtothesnubbercircuitofIGBTinverter[J].PowerElectronics,1998,(3):4347.[7]BimalKBose.Powerelectronicsandmotordrives[M].USA,MarylandHeights:AcademicPress,2006.[8],,,.(2)[M].:,2009.[9],.IGBT[J].,2010,26(6):1518.YaoRu,iLiNa.StudyonapplicationofIGBTdriverinchopperinternalfeedbackcascadespeedregulationsystem[J].ElectricPowerScienceandEngineering,2010,26(6):1518.AnalysisontheReasonsofOverVoltageforIGBTandtheDesignofRCSnubberCircuitJiangDongdong,WangYe,LuFeng(SchoolofControlandComputerEngineering,NorthChinaElectricPowerUniversity,Baoding071003,China)Abstract:DuingtotheIGBToftenworkinthehighfrequencycondition,soitisimportanttorestrainitsovervoltageintheprocessofturningoftheIGBT.ThispaperanalyzedthereasonsofovervoltageforIGBT,introducedthreekindsofsnubbercircuitwhichiscommonlyusedonthecurrentandanalyzedtheworkingprincipleandparametersoftheRCsnubbercircuit.ThispaperbuiltaspecificallycircuitmodelwhichwasusedtotestingthedynamiccharacteristicsofIGBT.RCsnubbercircuitwassimulatedandanalyzedbytheMultisimandtheabsorptioncharacteristicofRCsnubbercircuitwascertified.Keywords:RC;snubbercircuit;IGBT;surgevoltage