原子层沉积技术发展现状

EquipmentforElectronicProductsManufacturingEPE180Jan．2010()：，，。。（ALD），、（）。、、AVD。：；；；：TN304.055：A：1004-4507(2010)01-0001-07TheDevelopmentStatusofAtomicLayerDepositionTechnology(EditorialOfficeofEPE)Abstract:Thecomplexstructureofnon-planarsubstratemorphologyproducedagreatchallengeusedinthetraditionalthin-filmdepositiontechnologies.ThedifferenttypesofICdevicesneeddifferentpro-ductiontechniques,butalsomadeofdifferentrequirementsonthethinfilmsmaterials.Inordertobreaktheperformancelimitationsofexistingmaterials,itrequiresdevelopmentofamorehigh-perfor-mancematerials.AtomicLayerDeposition(ALD)istheuniquetechnologytomeetthesechallenges.Ithasexcellentuniformityofthin-filmdeposition,stepcoverage,and(forfilmgraphics)compliance.TheprincipleofatomiclayerdepositiontechniqueandtheissuesofnewgenerationlogicalcomponentsfabricationfacingisIntroducedinthispaper,ThestatusquooftheatomicvapordepositionandatomiclayerdepositiontoolisalsoIntroducedinthispaper.Keywords:Filmdeposition;Atomiclayerdeposition(ALD)ALDtool;AtomicVaporDeposition(AVD)、。CVD。(AtomicLayerDepositionALD)(AtomicLayerEpitaxyALE)(AtomicLayerChemicalVaporDepositionALCVD)。－。2070··1EquipmentforElectronicProductsManufacturingEPE180Jan．2010ZnS:MnAl2O3。。。1。。。(ALD)CVD、。ALD。ALD、、、。。。。。。ALDCVD。ALD。。()/(/)。ALD(1)。。。。。ALD350℃CVD600℃。。4AABB。。ALD●●●1··2EquipmentforElectronicProductsManufacturingEPE180Jan．2010●●●(400℃)●。、、MEMS。2(SiON)。45nm32nm。SiO2SiON。()。NMOSPMOS。3D:32nm。。2.1ALD3D(HAR)。ALD。。2.2kk/。ITRS5～10/。Al2O3HfO2ZnO2。。k、。ALDk、、()。。R&D。COO。。。。(ThermalBudget)··3EquipmentforElectronicProductsManufacturingEPE180Jan．2010HfO2、HfSiO、HfSiON、HfZrO、DyScO、Lao。/(USJanneal,RTA,1000℃)。HfSiO、HfSiON、DyScO、Lao。。(Gatelast,ReplacementGate)(GateFirst)3~5。3(AtomicVaporDeposition，AVD)。(self-limited)。(atomiclayerresolution)。ALD(N2Ar)(purge)。AVD(microinjector)(pulse)2nm(pulse)。ALD。─。45(Precursor)。AVD1∶25AVD6nm100%GateLast。4。(ALD)90nmIC。AIXTRON、AppliedMaterials、ASMInternational、AvizaTechnology、OxfordInstruments。、HBT、PHEMT、MES-FET、、LED、VCSEL、、、、。··4EquipmentforElectronicProductsManufacturingEPE180Jan．20104.1AppliedMaterialsiSprintCentura(AppliedMaterials)iSprintCentura(2)300mm90nm。300mmiSprint65nm。4(3)6550%40%。(5nm)15%。iSprint。EnduraiLB(/)/。4.2GenusGenusSunnyvaleAIXTRONGenus200mm300mm(LYNX)StrataGemCVD()、ALD()。GenusCVDALD。GenusStrataGem300mmALDDRAM———(ProMOSTechnologies)(CentralTaiwanSciencePark)ProMOSFab390nm。300mmALD70nmDRAM?MIM?film()。Genus?ALDAIXTRON。AIXTRON。ALDAIXTRONALD、AVDMOCVDGenusProMOS300mmCVD2007。4.3OxfordInstrumentsPlasmaTechnologyOxfordInstrumentsPlasmaTechnologyFlexAL(4)。、。TiN、HfO2Al2O3200mm。2iSprintCenturaALD/CVDCVDWALDWALDWCVDW3··5EquipmentforElectronicProductsManufacturingEPE180Jan．2010FlexAL、(ALD)ALD(1)(2)ALD(3)(4)。FlexALRPT(1)ALD(2)ALD700℃。FlexALRPT(1):。,,。。。、、。(2),,,。、、(3)。。。(4)。、、MEMS(5)20。。。(),。。4.4ASMPulsarRASMInternationalN.VASMAmerica(ALD),(LaOx)(AlOx)k(HighKCaplayers),32nmkCMOS。k,、PDA。ASM32nm。,PN4FlexAL··6EquipmentforElectronicProductsManufacturingEPE180Jan．2010。(Hafnium)(capfilm)。1nm()capfilm。ALDASMPulsar®。PulsarPoly-gon®。“k”ASMGlenWilk。“k(GateFirst)(Gatelast)。ASMk、ALD。ASM50PulsarALDk。”ASMPulsark45nm28nm。GlenWilk“k28nm。”4.5AvizaCelsiorfxALDAvizaTechnology,Inc.、、,,ALD、LPCVD、APCVD、CVD、PVD。CelsiorVerano5500。45nmk。AvizaALDDRAMflash。SMINALD。AvizaMoselVitelicCorp。AvizaMoselflashALD。4.6AIXTRONAGTricentAVD?(5)Triject?microinjectionpulseALD3~10。AVDmicroinjection(HfO2、ZrO2、TaN、Ru、Ir、TaCN)(HfSiOx、HfZrOx、Ru-SiOx…)(PZT、SBT)AVD。5(ALD)。300mm。100。。5TricentAVD(27)··7EquipmentforElectronicProductsManufacturingEPE180Jan．2010(6)。。。。。。。。。。。。。。、、、。。(1)。(2)。[1]H.Kim“Atomiclayerdepositionofmetalandnitridethin?lms:Currentresearcheffortsandapplicationsforsemiconductordeviceprocessing”[J]J.Vac.Sci.Technol.B216,2003(Nov/Dec):2231-2259.[2]GaneshM.Sundaram,EricW.Deguns,RitwikBhatia,MarkJ.Dalberth,MarkJ.Sowa,JillS.Becker;“ALD3D”[J]2009(8/9):29-34.[3]ChenYuhHerng,KevinLin,“”[J]20074/5:23-26.[4]SANTACLARA,“AppliedMaterials’High-k/MetalGateTechnologySelectedbySTMicroelectronicsfor28nmChipProduction”[EB/OL][5]“UniqueIntegeatedALDandCVDTungstenSystemfor≤65nm/70nm”[EB/OL][J]JournaloftheChineseInstituteofIndustrialEngineers,2001,18(4):59-72.[2]UZSOYR,etal.Areviewofproductionplanningandschedulingmodelsinthesemiconductorindustrypart:Systemcharacteristics,performanceevaluationandproductionplanning[J].IIETrans,1992,24(4):47-60.[3]DUENYASI.Asimplereleasepolicyfornetworksofqueuingwithcontrollableinputs[J].operationsResearch,1994,42(6):1162-1171.[4]DEJEFFOAT,ROBERTLB.Simulatedannealingforresourceconstrainedscheduling[J].EuropeanJofOperationalResearch,1993,70:43-51.ⅠⅠⅠⅠⅠⅠⅠⅠⅠⅠⅠⅠⅠⅠⅠⅠⅠⅠⅠⅠⅠⅠⅠⅠⅠⅠⅠⅠⅠⅠⅠⅠⅠⅠⅠⅠⅠⅠⅠⅠⅠⅠⅠⅠⅠ(7)··27