宽禁带半导体SiC功率器件发展现状及展望

220094JournalofCAEITVol.4No.2Apr.2009:2009202204:2009203219SiC,,,(,610054):(SiC),,DARPAHPE,SiCSiC:;;:TN31;TN387:A:167325692(2009)022111208RecentDevelopmentandFuturePerspectiveofSiliconCarbidePowerDevicesOpportunityandChallengeZHANGBo,DENGXiao2chuan,ZHANGYou2run,LIZhao2ji(StatekeyLaboratoryofElectronicThinFilmsandIntegratedDevices,UniversityofElectronicScienceandTechnologyofChina,Chengdu610054,China)Abstract:Siliconcarbide(SiC)isatypicalmaterialforthe3rdgenerationsemiconductor.Itisalsooneofthemostwidely2usedandthebesttypesofmaterialfortheproductionofwideband2gapsemiconduc2tors,largelyduetoadvancementincrystalgrowthtechnology,andthematerialpshightoleranceintermsoftemperature,frequency,radioactivity,andpoweroutput.ThelatestdevelopmentinSiCpowerdevice,thechallengesandthefutureperspectivesinvolved,andrelatesthedescriptiontotheresearchinthestate2of2the2artDARPAWideBand2gapSemiconductorTechnology(WBST)andtheHighPowerElec2tronics(HPE)programarealldescribedinthispaper.RecentadvancesandthefutureperspectiveofSiCdevicesinChinaarealsoaddressed.Keywords:widebandgap;siliconcarbide;powerdevices0,(SiC)(GaN),SiC,[1,2]SiC,SiC1HPE2090,(DOD,depart2mentofdefense)SiC,SiC1992,20092400V6H2SiCSBD()[3]2001,SiCSBD,Semisouth100A600V300SiCSBD(MEA,moreelectricaircraft)SiCSBD,21,(DAR2PA)(WBGSTI,widebandgapsemiconductortechnologyinitiative),SiCGaN,,ESCAPEENEDODARPA-WBGSTI(PhaseIPhaseII),PhaseI//(RFWBGS,RF/microwave/millimeter2wavetechnology),PhaseII(HPE,highpowerelectronics)[4,5]SiCMESFETs,Cree10W60WA/AB,SiCMMIC,E2D,GaN,GaNHEMTSiCMESFETs,GaNSiCMESFETs2007,Cree(10W120W)GaNHEMT,GaNMMICRFWBGS(20052007),DARPAGaNMMIC,SiCMESFETs,SiCHPE,SiCCreeAPTSemi2southSiC,2006SiC,MESFETsDARPAHPE(1),,SiC;1020kVSiC(PiNMOSFETIGBT);SiC;SiC2.7MVA(SSPS,solidstatepowersubstation)1DARPAWBST-HPEHPE,1(b)(20032004),SiC2in3in20075,Cree(ZMPTM,zero2mi2cropipe),100mm(4in)N4H2SiC(20052006)SiCSSPS(20072008)SiC,,SSPSSSPSCVN221(EMLS,electromagneticlaunchsystem)CVN221,,300ft160knSiC(60Hz)(20kHz),6t1.7t,10m32.7m3,20092010,SSPS,DARPAHPESiCSiC,,,21120092:SiC2SiC2.1SiC,(SBD,schottkybarrierdi2ode),PiN(JBS,junc2tionbarrierschottkydiode),SiC,Cree(50A,1200V)Microsemi(4A,600V)In2fineon(15A,1200V)SiCSBD,Si2IGBTSiCSBDSi[6],,SiCSi2003Rutgers10.8kV,97mcm2SiCSBD[7]20084H2SiCSuper2SBD,22.57mcm22.7kV,2837MW/cm2[8]2SiCSuper2SBD3kV,SiCPiNSiPiN2000SugawaraCree12kV19.5kVPiN[9]19.5kVSiCPiN,7.5V(100A/cm2);3mA/cm2;43ns,6kVSi1/302005Cree10kV,3.75V,50A(8.7mm8.7mm2)SiCPiN,10kV/20APiN40%,3[10]310kVSiCPiN,SiCPiN,,PiNSiCJBS,,2007Cree10kV/20ASiCJBS(4),14.910.6mm2,3inN4H2SiC37%,10kV/5ASiCJBS40%[10]410kVSiCJBSSiC,,;,311200922.2SiC,(MOSFETJFETSIT),100kHzSiMOSFET,2.5,SiC,Si,,SiCMOSFET,,SiCMOSFET,SiCMOSFET:UMOSVDMOSLDMOS(lateraldouble2diffusionMOSFET)UMOSACCUFET(UMOSaccumulationchannelfieldeffecttransistor),SIAFET(staticinductioninjectedaccumulatedfieldeffecttransistor)Sei2HyungRyu10kV,123mcm24H2SiCDMOS,n-81014cm-385m[11]2007Cree3in4H2SiC8.118.11mm210kV/20ADMOS,2575ns,20kHz10kVH[10],5510kV4H2SiCDMOSFET2008RESURFLD2MOS,1550V54mcm2,44MW/cm2(Vb2/Ron)[12],6MOSJFET,p-n,SiCMOSFETSiO2SiCJFETSiC,RutgersTi2VJFET11kV,130mcm2,930MW/cm2,7[13](SIT,staticinductiontransistors)p-n,(UHF-C),SiCSiCSIT1200V,12mcm22006,p+(SiC2SIT),8700V,1.01mcm2,600V1200V,[14]84H2SiCSIT41120092:SiC2.3SiCSiCBJTGTOIGBTSi,SiC2050SiBJT,SiCBJTSi100,BJT,SiC,SiCBJT,2004RutgersUSCI9.28kV,49mcm2,74H2SiCBJT,9[15]Cree44,3.2kV,8.1mcm24H2SiCBJT[16]M.Domeij,1100V,SiCBJT60,90[17],SiCBJTBJT,1050MOSFET,BJT,JFET,94H2SiCBJTY.SugawaraGTO,12.7kV,35.2mcm2[18]2004Cree(KEPCO)4.5kV60AGTO,2s,SiGTO10,SiCIGBT,Q.Zhang10kVUMOS4H2SiCIGBT,25,-7.5V,175mcm2[19]2007,Purdu20kVSiCP2IG2BT,P-175m[20]Cree12kVSiCN2IGBT[10],Si2IGBT101012kV4H2SiCN2IGBT3SiC,Si,,SiSiC:(RIE),SiC,SiC3.1SiCSiC,Cree24inSiC,200920106in(150mm)SiC6inSi,,Cree2007(ICSCRM2007),(threadingscrewdislocation),3in,Cree375/cm2,175/cm2,10kVSiC,61.5%,SiC,(ULVAC)2005SiC,106inSiC511200923.2SiC,SiC,SiCSiSiC,MOSFETYoleDeveloppement2008,2015SiC8,1111SiCCreeSiCMMIC,SiCSiCSBD150kHz500kHz,,,PC0.50.2,PC10kV/50APiN10kVSiCMOSFET10kV110A,,SiCMOSFETICSCRM07,,SiC,2010,SiC3.3SiCSiC,,,SiC:SiCSiC,Cree,(DowCorn2ing)SiCrystalCree,20062inSiC500,4inSi7SiCSiCCreeCree,SiCCree20061/10SiCIntrinsic,,Cree:SiC,,SiC,Cree2007(zeromicropipes)4inSiC(screwdislocationbasalplanedislocationsedgedislo2cation)SiCSiCMOSFET:4H2SiCMOS2FET30170cm2/Vs,SiMOSFET,SiCMOSFET,(:H2NON2O)SiC/SiO2SiCBJT,,SiCSiC,SiC4SiC4.1SiC,SiC,SiC(973)(863),XXXSiCSiCXXX,61120092:SiCSiC(46)SiC()SiC(1355)SiCSiC,,SiCSiC,:,[21,22]PSiCBJT,SiCSiC,SiCMESFETs,SiCMESFETsSiC[2326]SiC,SiC,SiCSiCMESFETs,SiC[2729]13,SiCMESFETs2GHz,8.9W/mm[30]552008420mmSiCMESFETsSiC,2GHz,280W,8.6dB[28]SiC,1355600V1200VSiCSBD4.2SiSiC,SiC,,SiCSiC,SiC-,SiC,SiCSiC,SiCMESFETs,SiCSiC,SiCSBD,SiC,SiC(:SBDJBSPiN),,,SiCSiCMOSFET,,SiC,MOSSiCJFETSiCBJTSiCJFETBJT,SiC,SiCMOSFETIGBT,,,,SiCMOSFETIGBTSiC,SiC,SiC,,SiCSiCSiC5SiC,,SiC,SiC,SiC,SiC,,SiC:[1]SIERGIEJRR,CLARKERC,etal.AdvancesinSiCMa2terialsandDevices:AnIndustrialPointofView[J].Ma2terialsScienceandEngineering,1999,B61262:9217.[2]ZOLPERJC.EmergingSiliconCarbidePowerElectronicsCompone