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36720117HEATTREATMENTOFMETALSVol.36No.7July2011檴檴檴檴檴檴檴檴檴檴檴檴殜殜殜殜SiCC264209C3H8CH3SiCl3MTSC、SiC。X。C3H8+N2140L/h1300℃C、160L/h。MTS+H260L/h、1100℃SiC1300℃SiC。MTS-H2SiC。CSiCSiC2μm。CVDCSiCTB303A0254-6051201107-0079-05PreparationofSiCandCcoatingsongraphitesurfacebychemicalvapordepositionWANGChun-yuWANGXin-yuTANGCai-yuWENGuang-wuSchoolofMaterialsScienceandEngineeringHarbinInstituteofTechnologyWeihaiWeihaiShandong264209ChinaAbstractTheCcoatingandSiCcoatingweredepositedongraphitesurfacebychemicalvapordepositionCVDtheC3H8wasemployedtodepositCcoatingandCH3SiCl3MTSwasusedtodepositSiCcoating.ThemicrostructureandphasescompoundsofthecoatingswereinvestigatedbyscanningelectronmicroscopeSEMandX-raydiffractionXRD.Effectsoftemperatureandgas-flowrateonmorphologyofthecoatingwereinvestigated.TheresultsshowthatthepropertemperatureofdepositionCcoatingis1300℃.ThesmoothanduniformityCcoatingwouldbeobtainedwithgas-flowrateat140L/hthecoarsenesscoatingistoobtainat160L/h.ThecompactionSiCcoatingisobtainedat1100℃.ThemicrostructureofSiCcoatingischangedat1300℃thicknessofthecoatingisincreasingandcircularraisedfaceisobtainedatthistemperature.ItshowsthatincreasingflowcouldenlargegrainsizebutlargescaleflowwouldbecausedflakingoffofSiCcoating.Theco-depositionCandSiCcoatingscanbeperfecttransitionlayersthebindingbetweenco-depositioncoatingandgraphitesubstrateisenhancedSiCcoatinghasbettertransitionlayerongraphitesurfaceandthicknessoftransitionlayerisabout2μm.KeywordschemicalvapordepositionCVDgraphitematrixCcoatingSiCcoatingmicrostructure2010-09-30HIT.NSRIF.20091501975—、20。0631-56871250631-5687305E-mailwcyadam@126.com、、。。。CVDSiC1-3。。、、、。4CVDC、SiC。5JoungIlKim6CVDSiC/CC-C。7C/SiCSiC。8SiC。CVDCSiC、CSiC。803611.1800。CC3H81200、13001400℃C3H8+N2100、140160L/h10h。SiCCH3SiCl3MTSH299.8%1100、12001300℃MTS+H260、80120L/h100L/h30h。MTSSi、C1∶1SiCSiCMTSSiC8。CH3SiCl3g=SiCs+3HClg。1CSEMFig.1SEMmicrographsofCdepositedcoatingsunderdifferenttemperatureswithsameC3H8flowa1200℃b1300℃c1400℃1.2JSM-6700FSEMSIEMENSDiffraktometerD5000X。22.1CVDCSiC、、7-9。。1400℃1300℃。。11200、13001400℃100L/hCSEM。1200℃1300℃1a1b。1400℃C6μm1a1b。。1300℃C。SiC10-13。21100、12001300℃MTS+H260g/LSiC。2。1100℃。1200℃、。1300℃SiC。MTS。2a、b、c7SiCC811100℃2~3μm1300℃8μm。SiC1100~1300℃SiC。1100℃1300℃SiC。EDXCSi。SiC。11-15。2.23ab1400℃100、140160L/hCSEM。140L/h3bCC100L/h3aC、。160L/hC。4MTS+H260、80120L/h1200℃Ar100L/h2hSiC。SiC。MTS。MTS。4a、4b4cSiC。。4aSiC。4b4c。SiC。、。2SiCSEMFig.2SEMmicrographsofSiCdepositedcoatingsinacross-sectionunderdifferenttemperaturesa1100℃b1200℃c1300℃31400℃CFig.3SEMmicrographsofCcoatingdepositedat1400℃withdifferentgas-flowa100L/hb140L/hc160L/h82364MTS+H2SiCSEMFig.4SEMmicrographsofdepositedSiCcoatingsinsurfaceunderdifferentMTS+H2flowaMTS+H260L/hbMTS+H280L/hcMTS+H2120L/h543SiCXRDSiC16。5SiCXRDFig.5XRDpatternsoftheSiCcoatingsa60L/hb80L/hc120L/h2.3CSiC。①1000℃。②1000℃1300℃1000℃0.1L/min1300℃0.5L/minAr40L/h160L/h1h。③1300℃SiCCMTS+H20MTS00.3L/minArH24L/min。④0SiCMTS+H20.35L/minAr160L/hH24L/min2h。⑤900℃。。6SEMSiC2μm。6C-SiCSEMFig.6SEMmicrographofC-SiCcompositescoatingsincrosssectionC、SiCSiCC-SiC。。31C1300℃C。SiC1100℃SiC1300℃SiC。2140L/hCMTS7SiCC83SiCSiCMTS。3C、SiC。1.SiCJ.2007361960-963.2.J.201031115-28.3WuShoujunChengLaifeiZhangLitongetal.Comparisonofoxidationbehaviorsof3DC/PyC/SiCandSiC/PyC/SiCcompositesinanO2-AratmosphereJ.MaterialsScienceandEngineeringB2006130215-219.4ChengLaifeiXuYongdongZhangLitongetal.OxidationanddefectcontrolofCVDSiCcoatingonthree-dimensionalC/SiCcompositeJ.Carbon2002402229-2234.5LiuRongjunZhangChangruiZhouXinguietal.Structuralanalysisofchemicalvapordepositedb-SiCcoatingsfromCH3SiCl3-H2gasprecursorJ.JournalofCrystalGrowth2004270124-127.6KimJoungIlKimWeon-JuChoiDooJinetal.DepositionofcompositionallygradedSiC/ClayersonC-CcompositesbylowpressurechemicalvapordepositionJ.JournalofNuclearMaterials2002307-3111084-1087.7.C/SiCSiCJ.20083681098-1108.8.CVDSiCJ.200828250-54.7.J.2005334443-446.8ZielinskiMPortailMChassagneTetal.Nitrogendopingof3C-SiCthinfilmsgrownbyCVDinaresistivelyheatedhorizontalhot-wallreactorJ.JournalofCrystalGrowth20083103174-3182.9WuShoujunChengLaifeiZhangLitongetal.Oxidationbehaviorof2DC/SiCwithamulti-layerCVDSiCcoatingJ.SurfaceandCoatingsTechnology20062004489-4492.10ItohTakashiKawasakiTakahiroTakaiYutaetal.Propertiesofhetero-structuredSiCXfilmsdepositedbyhot-wireCVDusingSiH3CH3ascarbonsourceJ.ThinSolidFilms2008516641-643.11FuQiangangLiHejunShiXiaohongetal.Siliconcarbidecoatingtoprotectcarbon/carboncompositesagainstoxidationJ.ScriptaMaterialia200552923-927.12HareRamAryalSudipAdhikariDilipChandraGhimireetal.PreparationofdiamondlikecarbonthinfilmsaboveroomtemperatureandtheirpropertiesJ.DiamondandRelatedMaterials200817680-683.13ZhangQingChengLaifeiWangWeietal.EffectofSiCcoatingandheattreatmentondampingbehaviorofC/SiCcompositesJ.MaterialsScienceandEngineeringA2008473254-258.14ZhaoQLiJCZhouHetal.Parametersdeterminingcrystallinityinβ-SiCthinfilmspreparedbycatalyticchemicalvapordepositionJ.JournalofCrystalGrowth2004260176-180.15ZhaoJuanWangGuiGuoQuanguietal.MicrostructureandpropertyofSiCcoatingforcarbonmaterialsJ.FusionEngi
本文标题:石墨表面化学气相沉积SiC及C涂层的制备
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