延伸摩尔定律的应变硅技术

延伸摩尔定律的应变硅技术作者：王敬，WANGJing作者单位：清华大学,微电子学研究所;清华信息科学与技术国家实验室(筹),北京,100084刊名：微电子学英文刊名：MICROELECTRONICS年，卷(期)：2008,38(1)被引用次数：1次参考文献(38条)1.WELSERJ;HOYTJL;GIBBONSJFElectronmobilityenhancementinstrained-SiN-Typemetal-oxide-semiconductorfield-effecttransistors[外文期刊]1994(03)2.BAIP;AUTHC;BALAKRISHNANSA65nmlogictechnologyfeaturing35nmgatelengths,enhancedchannelstrain,8Cuinterconnectslayers,low-kILDand0.57μm2SRAMcell20043.CHANV;RENGARAJANR;ROVEDONHighspeed45nmgatelengthMOSFETsintegratedintoa90nmbulktechnologyincorporatingstrainengineering20034.SUGIIN;HISAMOTOD;WASHIOKPerformanceenhancementofstrained-SiMOSFETsfabricatedonachemical-mechanical-polishedSiGesubstrate[外文期刊]2002(12)5.RIMK;CHUJ;CHENHCharacteristicsanddevicedesignofsub-100nmstrainedSiN-andPMOSFETs[外文会议]20026.THOMPSONSE;SUNG;CHOIYSUniaxial-process-inducedstrained-Si:extendingtheCMOSroadmap[外文期刊]2006(05)7.CHENGZY;CURRIEMT;LEITZCWElectronmobilityenhancementinstrainedSin-MOSFETsfabricatedonSiGe-on-insulator(SGOI)substrates[外文期刊]2001(07)8.HORSTMANNM;WEIA;KAMMLERTIntegrationandoptimizationofembedded-SiGe,compressiveandtensilestressedlinerfilms,andstressmemorizationinadvancedSOICMOStechnologies[外文会议]20059.HARPERRGainingsynergywithstrainedsilicon[外文期刊]2005(05)10.TYAGIS;AUTHC;BAIPAnadvancedlowpower,highperformance,strainedchannel65nmtechnology200511.NGUYENB-Y;ZHANGD;THEANAUniaxialandbiaxialstrainforCMOSperformanceenhancement200612.THEANAV-Y;ZHANGD;VARTANIANVStrain-enhancedCMOSthroughnovelprocess-substratestresshybridizationofsuper-criticallythickstrainedsilicondirectlyoninsulator(SC-SSOI)[外文会议]200613.THEANAV-Y;PRABHUL;VARTANIANVUniaxial-biaxialstresshybridizationforsuper-criticalstrained-Sidirectlyoninsulator(SC-SSOI)PMOSwithdifferentchannelorientations[外文会议]200514.LECAMC;GUYADERF;DEBUTTETCAlowcostdrivecurrentenhancementtechniqueusingshallowtrenchisolationinducedstressfor45-nmnode[外文会议]200615.SINGHDV;SLEIGHTJW;HERGENROTHERJMStressmemorizationinhigh-performanceFDSOIdeviceswithultra-thinsiliconchannelsand25nmgatelengths200516.CHENCH;LEETL;HOUTHStressmemorizationtechnique(SMT)byselectivelystrained-nitridecappingforsub-65nmhigh-performancestrained-Sideviceapplication200417.GRUDOWSKIP;ADAMSV;BOX-Z1-Dand2-Dgeometryeffectsinuniaxially-straineddualetchstoplayerstressorintegrations200618.MohtaN;THOMPSONSEMobilityenhancement-thenextvectortoextendMoore'sLaw2005(05)19.CHIDAMBARAMPR;SMITHBA35%drivecurrentimprovementfromrecessed-SiGedrainextensionson37nmgatelengthPMOS[外文会议]200420.THOMPSONSE;ARMSTRONGM;AUTHCSAlogicnanotechnologyfeaturingstrainedsilicon[外文期刊]2004(04)21.InternationalTechnologyRoadmapforSemiconductors200622.YANGHS;MALIKR;NARASIMHASDualstresslinerforhighperformancesub-45nmgatelengthSO1CMOSmanufacturing[外文会议]200423.ANGK-W;CHUIK-J;BLIZNETSOVVThinbodysilicon-on-insulatorN-MOSFETwithsilicon-carbonsource/drainregionsforperformanceenhancement[外文会议]200524.GHANIT;ARMSTRONGM;AUTHCA90nmhighvolumemanufacturinglogictechnologyfeaturingnovel45nmgatelengthstrainedsiliconCMOStransistors200325.ZHANGD;NGUYENBY;WHITETEmbeddedSiGeS/DPMOSonthinbodySOIsubstratewithdrivecurrentenhancement[外文会议]200526.ABERGI;CHLEIRIGHCN;HOYTJLUltrathin-bodystrained-SiandSiGeheterostructure-on-insulatorMOSFETs[外文期刊]2006(05)27.ABERGI;OLUBUYIDEOO;CHLEIRIGHCNElectronandholemobilityenhancementsinsub-10nm-thickstrainedsilicondirectlyoninsulatorfabricatedbyabondandetch-backtechnique[外文会议]200428.RIMK;CHANK;SHILFabricationandmobilitycharacteristicsofultra-thinstrainedSidirectlyoninsulator(SSDOI)MOSFETs[外文会议]200329.ANTONIADISDA;ABERGI;CHLEIRIGHCNContinuousMOSFETperformanceincreasewithdevicescaling:theroleofstrainandchannelmaterialinnovations2006(4-5)30.OLSENSH;O'NEILLAG;CHATTOPADHYAYSStudyofsingle-anddual-channeldesignsforhigh-performancestrained-Si-SiGen-MOSFETs[外文期刊]2004(07)31.JUNGJ;YUS;LEEM.LMobilityenhancementindual-channelP-MOSFETs[外文期刊]2004(09)32.JUNGJ;LEEML;YUSImplementationofbothhigh-holeandelectronmobilityinstrainedSi/strainedSi1-yGeyonrelaxedSi1-xGex(x＜y)virtualsubstrate[外文期刊]2003(07)33.GEC-HProcess-strained-Si(PSS)CMOStechnologyfeaturing3-Dstrainengineering200334.THOMPSONSE;SUTHRAMS;SUNYFutureofstrainedSi/semiconductorsinnanoscaleMOSFETs200635.RIMK;HOYTJL;GIBBONSJFTransconductanceenhancementindeepsubmicronstrainedSin-MOSFETs[外文会议]199836.THOMPSONSE;SUNG;WUKKeydifferencesforprocess-induceduniaxialvs.substrate-inducedbiaxialstressedSiandGechannelMOSFETs200437.TAKAGIS-I;HOYTJL;WELSERJComparativestudyofphonon-limitedmobilityoftwo-dimensionalelectronsinstrainedandunstrainedSimetal-oxide-semiconductorfield-effecttransistors[外文期刊]1996(03)38.MooreGECrammingmorecomponentsontointegratedcircuits1965(08)引证文献(1条)1.周东.张庆东.顾晓峰基于SGOI和CESL结构的新型应变硅NMOSFET的有限元研究[期刊论文]-微电子学2010(3)本文链接：