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当前位置:首页 > 商业/管理/HR > 管理学资料 > 锂电充电保护MOS---8205---SOT23-6
8205DualNCHANNELHighDensityTrenchMOSFETTYPEBVDSSRDS(ON)ID25mΩ@VGS=4.5V6ATXY820520V40mΩ@VGS=2.5V5AGreenProductPINDESCRIPTIONFEATURESHighDensitycelltrenchdesignforlowRds(on)RuggedandreliableSurfaceMountpackageLeadFreeAvailable(GreenProduct)ABSOLUTEMAXIMUMRATINGSSymbolParameterValueUnitVDSSDrain-SourceVoltage(VGS=0V)20VVGSSGate-sourceVoltage±12VVID(a)DrainCurrent(continuous)atTC=25℃6AIDDrainCurrent(continuous)atTC=100℃2.4AIDM(b)DrainCurrent(pulsed)24APtotTotalDissipationatTC=25 ℃1.25WTstgStorageTemperatureTjMax.OperatingJunctionTemperature-55~175℃(a)Currentlimitedbypackage(b)PulsewidthlimitedbysafeoperatingareaTHERMALDATARthj-ambThermalResistanceJunction-ambientMax100℃/W1DS-Rev-1.32DS-Rev-1.3ELECTRICALCHARACTERISTICS(Tcase=25℃unlessotherwisespecified)OFFSymbolParameterTestConditionsMinTypMaxUnitBVDSSDrain-sourceBreakdownVoltageID=250uA,VGS=0V20VIDSSZeroGateVoltageDrainCurrent(VGS=0V)VDS=16V1uAIGSSCurrent(VDS=0V)VGS=±12V±100nAONSymbolParameterTestConditionsMinTypMaxUnitVGS(th)GateThresholdVoltageVDS=VGS,ID=250uA0.50.71.2VVGS=4.5V,ID=6A2325mΩRDS(on)StaticDrain-sourceOnResistanceVGS=2.5V,ID=5A3440mΩDYNAMICSymbolParameterTestConditionsMinTypMaxUnitCissInputCapacitance595PFCossOutputCapacitance140PFCrssReverseTransferCapacitanceVDS=10V,f=1MHz,VGS=0V125PF8205DualNCHANNELHighDensityTrenchMOSFET3DS-Rev-1.3ELECTRICALCHARACTERISTICS(continued)SWITCHINGONSymbolParameterTestConditionsMinTypMaxUnittd(on)Turn-onDelayTime3.5nstrRiseTimeVDD=10V,ID=6A,Rg=3ΩVGS=4.5V13.5nsQgTotalGateCharge21ncQgsGate-SourceCharge1.3ncQgdGate-DrainChargeVDD=10V,ID=6A,VGS=4.5V3.3ncSWITCHINGOFFSymbolParameterTestConditionsMinTypMaxUnittd(off)Turn-offDelayTime32nstfFallTimeVDD=10V,ID=6A,Rg=3ΩVGS=4.5V6.6nsSOURCEDRAINDIODESymbolParameterTestConditionsMinTypMaxUnitISContinuoussource-draindiodecurrentTC=25℃6ATrrBodydiodereverserecoveryTime14nSQrrBodydiodereverserecoverychargeIF=6A,di/dt=100A/us,Tj=25℃5nCVSDForwardOnVoltageISD=1.0A,VGS=0V0.781.2V8205DualNCHANNELHighDensityTrenchMOSFET4DS-Rev-1.38205DualNCHANNELHighDensityTrenchMOSFET5DS-Rev-1.38205DualNCHANNELHighDensityTrenchMOSFET6DS-Rev-1.38205DualNCHANNELHighDensityTrenchMOSFET
本文标题:锂电充电保护MOS---8205---SOT23-6
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