NTR2101PT1G中文资料

©SemiconductorComponentsIndustries,LLC,2006March,2006−Rev.41PublicationOrderNumber:NTR2101P/DNTR2101PSmallSignalMOSFET−8.0V,−3.7A,SingleP−Channel,SOT−23Features•LeadingTrenchTechnologyforLowRDS(on)•−1.8VRatedforLowVoltageGateDrive•SOT−23SurfaceMountforSmallFootprint(3x3mm)•Pb−FreePackageisAvailableApplications•HighSideLoadSwitch•DC−DCConversion•CellPhone,Notebook,PDAs,etc.MAXIMUMRATINGS(TJ=25°Cunlessotherwisestated)ParameterSymbolValueUnitDrain−to−SourceVoltageVDSS−8.0VGate−to−SourceVoltageVGS±8.0VContinuousDrainCurrent(Note1)t≤10sTA=25°CID−3.7ATA=70°C−3.0PowerDissipation(Note1)t≤10sPD0.96WPulsedDrainCurrenttp=10sIDM−11AOperatingJunctionandStorageTemperatureTJ,TSTG−55to150°CSourceCurrent(BodyDiode)IS−1.2ALeadTemperatureforSolderingPurposes(1/8″fromcasefor10s)TL260°CTHERMALRESISTANCERATINGSParameterSymbolMaxUnitJunction−to−Ambient–SteadyStateRJA160°C/WJunction−to−Ambient−t≤10sRJA130StressesexceedingMaximumRatingsmaydamagethedevice.MaximumRatingsarestressratingsonly.FunctionaloperationabovetheRecommendedOperatingConditionsisnotimplied.ExtendedexposuretostressesabovetheRecommendedOperatingConditionsmayaffectdevicereliability.1.SurfacemountedonFR4boardusing1insqpadsize(Cuarea=1.127insq[1oz]includingtraces).DevicePackageShipping†ORDERINGINFORMATIONNTR2101PT1SOT−233000/Tape&ReelV(BR)DSSRDS(on)TypIDMax−8.0V39m@−4.5V52m@−2.5V79m@−1.8V−3.7A†Forinformationontapeandreelspecifications,includingpartorientationandtapesizes,pleaserefertoourTapeandReelPackagingSpecificationBrochure,BRD8011/D.NTR2101PT1GSOT−23(Pb−Free)3000/Tape&Reel−ChannelSOT−23CASE318STYLE21MARKINGDIAGRAM&PINASSIGNMENTTR7=SpecificDeviceCodeM=DateCode*=Pb−FreePackage(Note:Microdotmaybeineitherlocation)*DateCodeorientationmayvarydependinguponmanufacturinglocation.TR7M1Gate2SourceDrain3123NTR2101P(TJ=25°Cunlessotherwisestated)ParameterSymbolTestConditionMinTypMaxUnitOFFCHARACTERISTICSDrain−to−SourceBreakdownVoltageV(BR)DSSVGS=0V,ID=−250A−8.0VDrain−to−SourceBreakdownVoltageTemperatureCoefficientV(BR)DSS/TJ10mV/°CZeroGateVoltageDrainCurrentIDSSVGS=0V,VDS=−6.4VTJ=25°C−1.0ATJ=125°C−100Gate−to−SourceLeakageCurrentIGSSVDS=0V,VGS=±8.0V±100nAONCHARACTERISTICS(Note2)GateThresholdVoltageVGS(TH)VGS=VDS,ID=−250A−0.40−1.0VNegativeThresholdTemperatureCoefficientVGS(TH)/TJ0.0027mV/°CDrain−to−SourceOnResistanceRDS(on)VGS=−4.5V,ID=−3.5A3952mVGS=−2.5V,ID=−3.0A5272VGS=−1.8V,ID=−2.0A79120ForwardTransconductancegFSVGS=−5.0V,ID=−3.5A9.0SCHARGESANDCAPACITANCESInputCapacitanceCISSVGS=0V,f=1.0MHz,VDS=−4.0V1173pFOutputCapacitanceCOSS289ReverseTransferCapacitanceCRSS218TotalGateChargeQG(TOT)VGS=−4.5V,VDS=−4.0V,ID=−3.5A1215nCGate−to−SourceChargeQGS3.8Gate−to−DrainChargeQGD2.5SWITCHINGCHARACTERISTICS(Note3)Turn−OnDelayTimetd(on)VGS=−4.5V,VDD=−4.0V,ID=−1.2A,RG=6.07.415nsRiseTimetr15.7525Turn−OffDelayTimetd(off)3858FallTimetf3151DRAIN−SOURCEDIODECHARACTERISTICSForwardDiodeVoltageVSDVGS=0V,IS=−1.2ATJ=25°C−0.73−1.2V2.PulseTest:pulsewidth≤300s,dutycycle≤2%.3.Switchingcharacteristicsareindependentofoperatingjunctiontemperatures.NTR2101P=−2.6Vto−6.0VVGS=−2.4VVGS=−2.2VVGS=−2.0VVGS=−1.8VVGS=−1.4VVGS=−1.2V−VDS,DRAIN−TO−SOURCEVOLTAGE(V)−ID,DRAINCURRENT(A)Figure1.On−RegionCharacteristics024681001234TJ=25°C−VGS,GATE−TO−SOURCEVOLTAGE(V)−ID,DRAINCURRENT(A)Figure2.TransferCharacteristicsVDS≥−10VTJ=25°CTJ=150°CTJ=−55°C00.050.10.150.20.250123456−VGS,GATE−TO−SOURCEVOLTAGE(V)RDS(on),DRAIN−TO−SOURCERESISTANCE()Figure3.On−ResistanceversusGate−to−SourceVoltageID=−3.7ATJ=25°C00.020.040.060.082345678−ID,DRAINCURRENT(A)RDS(on),DRAIN−TO−SOURCERESISTANCE()TJ=150°CTJ=25°CTJ=−55°CFigure4.On−ResistanceversusDrainCurrentandGateVoltageVGS=−4.5V0.80.91.11.21.31.41.51.61.7−50−2502550751001251501.0TJ,JUNCTIONTEMPERATURE(°C)RDS(on),DRAIN−TO−SOURCERESISTANCE(NORMALIZED)Figure5.On−ResistanceVariationwithTemperatureID=−3.7AVGS=−4.5V10010001000010000002468−VDS,DRAIN−TO−SOURCEVOLTAGE(VOLTS)Figure6.Drain−to−SourceLeakageCurrentversusVoltageVGS=0VTJ=150°CTJ=100°CIDSS,LEAKAGE(nA)NTR2101P−4−202468Figure7.CapacitanceVariationC,CAPACITANCE(pF)−VGS−VDSGATE−TO−SOURCEORDRAIN−TO−SOURCEVOLTAGE(V)CRSSCOSSTJ=25°CCISSVGS=0VDS=001234502468101214012345QG,TOTALGATECHARGE(nC)−VGS,GATE−TO−SOURCEVOLTAGE(V)Figure8.Gate−to−SourceandDrain−to−SourceVoltageversusTotalCharge−VDS,DRAIN−TO−SOURCEVOLTAGE(V)TJ=25°CID=−3.5AQTQGSQDSVDSVGS01234560.30.450.60.750.91.051.21101001000110100VDD=−4.0VID=−1.0AVGS=−4.5Vtrtd(off)td(on)tft,TIME(ns)Figure9.ResistiveSwitchingTimeVariationversusGateResistanceRG,GATERESISTANCE()−VSD,SOURCE−TO−DRAINVOLTAGE(V)−IS,SOURCECURRENT(A)Figure10.DiodeForwardVoltageversusCurrentVGS=0VTJ=25°CNTR2101P−23(TO−236)CASE318−08ISSUEANDA1312NOTES:1.DIMENSIONINGANDTOLERANCINGPERANSIY14.5M,1982.2.CONTROLLINGDIMENSION:INCH.3.MAXIMUMLEADTHICKNESSINCLUDESLEADFINISHTHICKNESS.MINIMUMLEADTHICKNESSISTHEMINIMUMTHICKNESSOFBASEMATERIAL.4.318−01THRU−07AND−09OBSOLETE,NE