FSDM0465

©2005FairchildSemiconductorCorporation•InternalAvalancheRuggedSenseFET•AdvancedBurst-ModeOperationConsumesUnderOneWat240VAC&0.5WLoad•PrecisionFixedOperatingFrequency(66kHz)•InternalStart-upCircuit•ImprovedPulsebyPulseCurrentLimiting•OverVoltageProtection(OVP):Auto-Restart•OverLoadProtection(OLP):Auto-Restart•InternalThermalShutdown(TSD):Auto-Restart•UnderVoltageLockOut(UVLO)withHysteresis•LowOperatingCurrent(2.5mA)•Built-inSoftStartApplication•SMPSforLCDmonitorandSTB•AdapterRelatedApplicationNotes•AN4137-DesignGuidelinesforOff-lineFlybackConvertersUsingFairchildPowerSwitch(FPS)•AN4140-TransformerDesignConsiderationforOff-lineFlybackConvertersUsingFairchildPowerSwitch•AN4141-TroubleshootingandDesignTipsforFairchildPowerSwitchFlybackApplications•AN4148-AudibleNoiseReductionTechniquesforFPSApplicationsDescriptionTheFSDM0465RBisanintegratedPulseWidthModulator(PWM)andSenseFETspecificallydesignedforhighperformanceofflineSwitchModePowerSupplies(SMPS)withminimalexternalcomponents.Thisdeviceisanintegratedhighvoltagepowerswitchingregulatorwhichcombinesaruggedavalanche,SenseFETwithacurrentmodePWMcontrolblock.ThePWMcontrollerincludesintegratedfixedfrequencyoscillator,undervoltagelockout,leadingedgeblanking(LEB),optimizedgatedriver,internalsoftstart,temperaturecompensatedprecisecurrentsourcesforaloopcompensationandselfprotectioncircuitry.ComparedwithadiscreteMOSFETandPWMcontrollersolution,thePWM/FSDMRBcanreducetotalcost,componentcount,sizeandweigh,whilesimultaneouslyincreasingefficiency,productivity,andsystemreliability.Thisdeviceprovidesabasicplatformwellsuitedforcost-effectivedesignsofflybackconverters.Table1.MaximumOutputPowerNotes:1.Typicalcontinuouspowerinanon-ventilatedenclosedadaptermeasuredat50°Cambient.2.Maximumpracticalcontinuouspowerinanopenframedesignat50°Cambient.3.230VACor100/115VACwithdoubler.4.Thejunctiontemperaturecanlimitthemaximumoutputpower.TypicalCircuitFigure1.TypicalFlybackApplicationOUTPUTPOWERTABLE(4)PRODUCT230VAC±15%(3)85-265VACAdapt-er(1)OpenFrame(2)Adapt-er(1)OpenFrame(2)FSDM0465RB48W56W40W48WFSDM0565RB60W70W50W60WFSDM07652RB70W80W60W70WFSDM12652RB90W110W80W90WDrainSourceVstrVfbVccPWMACINDCOUTFSDM0465RBGreenModeFairchildPowerSwitch(FPSTM)FSDM0465RB2InternalBlockDiagramFigure2.FunctionalBlockDiagramofFSDM0465RB8V/12V31245VrefInternalBiasSQQROSCVccVrefIdelayIFBVSDTSDVovpVccVCLSQQRR2.5RVccgoodVccDrainN.CVFBGNDGatedriver6VstrICHVccgood0.5/0.7VLEBPWMSoftstart+-VccGoodFSDM0465RB3PinDescriptionPinAssignmentsFigure3.PinConfiguration(TopView)PinNumberPinNamePinFunctionDescription1DrainThispinisthehighvoltagepowerSenseFETdrain.Itisdesignedtodrivethetransformerdirectly.2GNDThispinisthecontrolgroundandtheSenseFETsource.3VccThispinisthepositivesupplyvoltageinput.Duringstartup,thepowerissup-pliedbyaninternalhighvoltagecurrentsourcethatisconnectedtotheVstrpin.WhenVccreaches12V,theinternalhighvoltagecurrentsourceisdisabledandthepowerissuppliedfromtheauxiliarytransformerwinding.4VfbThispinisinternallyconnectedtotheinvertinginputofthePWMcomparator.Thecollectorofanopto-coupleristypicallytiedtothispin.Forstableoperation,acapacitorshouldbeplacedbetweenthispinandGND.Ifthevoltageofthispinreaches6.0V,theoverloadprotectionisactivatedresultinginshutdownoftheFPSTM.5N.C-6VstrThispinisconnecteddirectlytothehighvoltageDClink.Atstartup,theinternalhighvoltagecurrentsourcesuppliesinternalbiasandchargestheexternalca-pacitorthatisconnectedtotheVccpin.OnceVccreaches12V,theinternalcur-rentsourceisdisabled.6.Vstr5.N.C.4.Vfb3.Vcc2.GND1.DrainTO-220F-6LFSDM0465RB4AbsoluteMaximumRatings(Ta=25°C,unlessotherwisespecified)Notes:1.RepetitiveRating:Pulsewidthlimitedbymaximumjunctiontemperature2.Tc:CaseBackSurfaceTemperature(Withinfiniteheatsink)3.TDL:DrainLeadTemperature(Withinfiniteheatsink)4.L=14mH,startingTj=25°C2.L=14mH,startingTj=25°CThermalImpedanceNotes:1.Infinitecoolingcondition-refertotheSEMIG30-88.ParameterSymbolValueUnitDrain-sourceVoltageVDSS650VVstrMaxVoltageVSTR650VPulsedDrainCurrent(Tc=25°C)(1)IDM9.6AContinuousDrainCurrent(Tc=25°C)(2)ID2.2A(rms)ContinuousDrainCurrent(Tc=100°C)(2)1.4A(rms)ContinuousDrainCurrent*(TDL=25°C)(3)ID*4A(rms)SinglePulsedAvalancheEnergy(4)EAS-mJSupplyVoltageVCC20VInputVoltageRangeVFB-0.3toVCCVTotalPowerDissipation(Tc=25°C)(2)PD33WOperatingJunctionTemperatureTjInternallylimited°COperatingAmbientTemperatureTA-25to+85°CStorageTemperatureRangeTSTG-55to+150°CESDCapability,HBMModel(AllpinsexceptVstrandVfb)-2.0(GND-Vstr/Vfb=1.5kV)kVESDCapability,MachineModel(AllpinsexceptVstrandVfb)-300(GND-Vstr/Vfb=225V)VParameterSymbolValueUnitJunction-to-AmbientThermalθJA-°C/WJunction-to-CaseThermalθJC(1)3.78°C/WFSDM0465RB5ElectricalCharacteristics(Ta=25°Cunlessotherwisespecified)ParameterSymbolConditionMin.Typ.Max.UnitSenseFETSECTIONDrainSourceBreakdownVoltageBVDSSVGS=0V,ID=250µA650--VZeroGateVoltageDrainCurrentIDSSVDS=650V,VGS=0V--250µAVDS=520VVGS=0V,TC=125°C--250µAStaticDrainSourceOnResistance(1)RDS(ON)VGS=10V,ID=2.5A-2.22.6ΩOutp