HY3008

HY3008P/M/B/PS/PMN-ChannelEnhancementModeMOSFETPMPSBMHOOYIHOOYIHOOYIHY3008reservestherighttomakechangestoimprovereliabilityormanufacturabilitywithoutnotice,andadvisecustomerstoobtainthelatestversionofrelevantinformationtoverifybeforeplacingorders.PinDescriptionOrderingandMarkingInformationApplications•PowerManagementforInverterSystems.N-ChannelMOSFETGSDNote:lead-freeproductscontainmoldingcompounds/dieattachmaterialsand100%mattetinplateterminationfinish;whicharefullycompliantwithRoHS.lead-freeproductsmeetorexceedthelead-freerequirementsofIPC/JEDECJ-STD-020DforMSLclassificationatlead-freepeakreflowtemperature.defines“Green”tomeanlead-free(RoHScompliant)andhalogenfree(BrorCldoesnotexceed900ppmbyweightinhomogeneousmaterialandtotalofBrandCldoesnotexceed1500ppmbyweight).Pÿ1HOOYIYYXXXJWWGHY3008ÿYYXXXJWWGHY3008ÿYYXXXJWWG····TO-3PS-3MTO-3PS-3LTO-263-2LTO-220FB-3MTO-220FB-3LGDSGDSGDSGDSGDSTO-220FB-3LTO-220FB-3MTO-263-2LTO-3PS-3MTO-3PS-3Leatures80V/100ARDS(ON)=mΩ(typ.)@VGS=10VAvalancheRatedReliableandRuggedLeadFreeandGreenDevicesAvailable(RoHSCompliant)7.0140501G:LeadFreeDeviceDateCodePackageCodeAssemblyMaterialYYXXXWWPM:TO-3PS-3MPS:TO-3PS-3LB:TO-263-2LM:TO-220FB-3MP:TO-220FB-3L**Draincurrentislimitedbyjunctiontemperature530***400**80HY30082AbsoluteMaximumRatingsSymbolParameterRatingUnitCommonRatings(TC=25°CUnlessOtherwiseNoted)VDSSDrain-SourceVoltage80VGSSGate-SourceVoltage±25VTJMaximumJunctionTemperature175°CTSTGStorageTemperatureRange-55to175°CISDiodeContinuousForwardCurrentTC=25°C100AMountedonLargeHeatSinkIDMPulsedDrainCurrent*ATC=25°C100IDContinuousDrainCurrentTC=100°C70ATC=25°C200PDMaximumPowerDissipationTC=100°C100WRθJCThermalResistance-JunctiontoCase0.75RθJAThermalResistance-JunctiontoAmbient62.5°C/WAvalancheRatingsEASAvalancheEnergy,SinglePulsedL=0.5mHmJNoteElectricalCharacteristics(TC=25°CUnlessOtherwiseNoted)SymbolParameterTestConditionsMin.Typ.Max.UnitStaticCharacteristicsBVDSSDrain-SourceBreakdownVoltageVGS=0V,IDS=250μA-VVDS=80V,VGS=0V--1IDSSZeroGateVoltageDrainCurrentTJ=85°C--10μAVGS(th)GateThresholdVoltageVDS=VGS,IDS=250μA234VIGSSGateLeakageCurrentVGS=±25V,VDS=0V--±100nARDS(ON)Drain-SourceOn-stateResistanceVGS=10V,IDS=50A-7.08.5mΩDiodeCharacteristicsVSDDiodeForwardVoltageISD=50A,VGS=0V-0.81VtrrReverseRecoveryTime-62-nsQrrReverseRecoveryChargeISD=50A,dlSD/dt=100A/μs-127-nC***VD=64V*Repetitiverating;pulsewidthlimiitedbyjunctiontemperature**HY3008P/M/B/PS/PM178907540HY30083ElectricalCharacteristics(Cont.)(TC=25°CUnlessOtherwiseNoted)SymbolParameterTestConditionsMin.Typ.Max.UnitDynamicCharacteristicsRGGateResistanceVGS=0V,VDS=0V,F=1MHz-1.0-ΩCissInputCapacitance-3150-CossOutputCapacitance--CrssReverseTransferCapacitanceVGS=0V,VDS=25V,Frequency=1.0MHz-441-pFtd(ON)Turn-onDelayTime-2345TrTurn-onRiseTime-td(OFF)Turn-offDelayTime-60100TfTurn-offFallTimeVDD=40V,RG=6Ω,IDS=50A,VGS=10V,-1930nsGateChargeCharacteristicsQgTotalGateCharge-80QgsGate-SourceCharge--QgdGate-DrainChargeVDS=64V,VGS=10V,IDS=50A-31-nCNote*:Pulsetest;pulsewidth≤300μs,dutycycle≤2%..(W)SafeOperationAreaVDS-Drain-SourceVoltage(V)ID-DrainCurrent(A)0204060801001201401601802000306090120150180210TC=25oC0.010.11101005000.11101006001ms10ms100usDCRds(on)LimitTC=25oC4(°C)ID-DrainCurrent(A)DrainCurrent0204060801001201401601800153045607590105120200TC=25oC,VG=10Vlimitedbypackage135Tc-CaseTemperature(°C)HY3008P/M/B/PS/PM0.00010.0010.010.11100.00010.0010.010.1ThermalTransientImpedanceSquareWavePulseDuration(sec)NormalizedEffectiveTransient10.010.020.050.10.2Duty=0.5MountedonminimumpadRθJA:62.5oC/WSingle517151311976.08.09.05VDS-Drain-SourceVoltage(V)ID-DrainCurrent(A)OutputCharacteristicsRDS(ON)-On-Resistance(mΩ)Drain-SourceOnResistanceID-DrainCurrent(A)VGS-Gate-SourceVoltage(V)RDS(ON)-On-Resistance(mΩ)Tj-JunctionTemperature(°C)GateThresholdVoltageNormalizedThresholdVlotageTypicalOperatingCharacteristics(Cont.)Drain-SourceOnResistance45678910IDS=50A-50-2502550751001251501750.20.40.60.81.01.21.41.6IDS=250μA0204060801007.010=10VHY3008P/M/B/PS/PM01234560204060801001201401604.5V5.5V5VVGS=6,7,8,9,10V6(°C)VSD-Source-DrainVoltage(V)Source-DrainDiodeForwardIS-SourceCurrent(A)VDS-Drain-SourceVoltage(V)C-Capacitance(pF)CapacitanceGateChargeQG-GateCharge(nC)VGS-Gate-sourceVoltage(V)TypicalOperatingCharacteristics(Cont.)0.00.20.40.60.81.01.21.40.1110100175Tj=175oCTj=25oC01020304050607080012345678910VDS=64VIDS=50A-50-2502550751001251501750.20.40.60.81.01.21.41.61.82.02.22.4RON@Tj=25oC:7.0mΩVGS=10VIDS=50A051015202530354005001000150020002500300035004000450050005500Frequency=1MHzCrssCossCissHY3008P/M/B/PS/PM7(SUS)VDDRDDUTVGSVDSRGtptd(on)trtd(off)tfVGSVDS90%10%HY3008P/M/B/PS/PMHY3008P/M/B/PS/PM8