PESD5V0L4UW中文资料

DATASHEETProductspecificationSupersedesdataof2003Aug152004Apr06DISCRETESEMICONDUCTORSPESDxL4UWseriesLowcapacitancequadrupleESDprotectionarray2004Apr062PhilipsSemiconductorsProductspecificationLowcapacitancequadrupleESDprotectionarrayPESDxL4UWseriesFEATURES•Uni-directionalESDprotectionoffourlinesorbi-directionalESDprotectionof3lines•Reversestandoffvoltage:3.3and5V•Lowdiodecapacitance•Ultralowleakagecurrent•UltrasmallSOT665surfacemountpackage•ESDprotection20kV•IEC61000-4-2;level4(ESD);15kV(air)or8kV(contact).APPLICATIONS•Cellularhandsetsandaccessories•Portableelectronics•Computersandperipherals•Communicationsystems•Audioandvideoequipment.MARKINGDESCRIPTIONLowcapacitancequadrupleESDprotectionarrayinafivepadSOT665ultrasmallplasticpackagedesignedtoprotectuptofourtransmissionordatalinesfromElectroStaticDischarge(ESD)damage.PINNINGTYPENUMBERMARKINGCODEPESD3V3L4UWA2PESD5V0L4UWA1PINDESCRIPTION1cathode12commonanode3cathode24cathode35cathode4handbook,halfpageMDB6781234512354Fig.1Simplifiedoutline(SOT665)andsymbol.ORDERINGINFORMATIONTYPENUMBERPACKAGENAMEDESCRIPTIONVERSIONPESD3V3L4UW-plasticsurfacemountedpackage;5leadsSOT665PESD5V0L4UW2004Apr063PhilipsSemiconductorsProductspecificationLowcapacitancequadrupleESDprotectionarrayPESDxL4UWseriesLIMITINGVALUESInaccordancewiththeAbsoluteMaximumRatingSystem(IEC60134).Notes1.Non-repetitivecurrentpulse8/20μsexponentiallydecayingwaveformseeFig.5.2.Pins1,3,4or5topin2.3.Devicemountedonstandardprinted-circuitboard.ESDstandardscomplianceTHERMALCHARACTERISTICSNotes1.Solderpointofcommonanode(pin2).SYMBOLPARAMETERCONDITIONSMIN.MAX.UNITIpppeakpulsecurrent8/20μs;notes1and2PESD3V3L4UW-3APESD5V0L4UW-2.5APpppeakpulsepower8/20μs;notes1and2-30WIFSMnon-repetitivepeakforwardcurrenttp=1ms;squarepulse-3.5AIZSMnon-repetitivepeakreversecurrenttp=1ms;squarepulsePESD3V3L4UW-0.9APESD5V0L4UW-0.8APtottotalpowerdissipationTamb=25°C;note3-250mWPZSMnon-repetitivepeakreversepowerdissipationtp=1ms;squarepulse;seeFig.4-6WTstgstoragetemperature-65+150°CTjjunctiontemperature-150°CESDelectrostaticdischargeIEC61000-4-2(contactdischarge)20-kVHBMMIL-Std88310-kVIEC61000-4-2,level4(ESD)15kV(air);8kV(contact)HBMMIL-Std883,class34kVSYMBOLPARAMETERCONDITIONSVALUEUNITRth(j-a)thermalresistancefromjunctiontoambientalldiodesloaded370K/WRth(j-sp)thermalresistancefromjunctiontosolderpointonediodeloaded;note1135K/Walldiodesloaded;note1125K/W2004Apr064PhilipsSemiconductorsProductspecificationLowcapacitancequadrupleESDprotectionarrayPESDxL4UWseriesELECTRICALCHARACTERISTICSTj=25°Cunlessotherwisespecified.Notes1.Pins1,3,4or5topin2.SYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNITPerdiodeVFforwardvoltageIF=200mA-11.2VVRWMreversestand-offvoltagePESD3V3L4UW--3.3VPESD5V0L4UW--5VIRMreverseleakagecurrentPESD3V3L4UWVRWM=3.3V-75300nAPESD5V0L4UWVRWM=5V-525nAV(CL)RclampingvoltagePESD3V3L4UWIpp=1A;note1--8VIpp=3A;note1--12VPESD5V0L4UWIpp=1A;note1--10VIpp=2.5A;note1--13VVBRbreakdownvoltageIZ=1mAPESD3V3L4UW5.325.65.88VPESD5V0L4UW6.466.87.14VrdiffdifferentialresistanceIR=1mAPESD3V3L4UW--200ΩPESD5V0L4UW--100ΩCddiodecapacitancePESD3V3L4UWf=1MHz;VR=0V-2228pFf=1MHz;VR=5V-1217pFPESD5V0L4UWf=1MHz;VR=0V-1619pFf=1MHz;VR=5V-811pF2004Apr065PhilipsSemiconductorsProductspecificationLowcapacitancequadrupleESDprotectionarrayPESDxL4UWserieshandbook,halfpage10110-1MDB60210-210-11tp(ms)IZSM(A)10PESD3V3L4UWPESD5V0L4UWFig.2Non-repetitivepeakreversecurrentasafunctionofpulsetime(squarepulse).handbook,halfpage05266101418221234VR(V)Cd(pF)MDB601PESD3V3L4UWPESD5V0L4UWFig.3Diodecapacitanceasafunctionofreversevoltage;typicalvalues.Tj=25°C;f=1MHz.handbook,halfpage101102MDB60310-210-11tp(ms)PZSM(W)10PESD3V3L4UWPESD5V0L4UWFig.4Maximumnon-repetitivepeakreversepowerdissipationasafunctionofpulseduration(squarepulse).PZSM=VZSMxIZSM.VZSMisthenon-repetitivepeakreversevoltageatIZSM.handbook,halfpage010e-t20t(μs)Ipp(%)401200408030MLE218100%Ipp;8μs50%Ipp;20μsFig.58/20μspulsewaveformaccordingtoIEC61000-4-5.2004Apr066PhilipsSemiconductorsProductspecificationLowcapacitancequadrupleESDprotectionarrayPESDxL4UWserieshandbook,fullpagewidthMDB605450Ω50ΩIEC61000-4-2networkCZ=150pF;RZ=330ΩD.U.T.PESDxL4UWRG223/U50ΩcoaxRZCZESDTESTER4GHzDIGITALOSCILLOSCOPE10×ATTENUATORGNDGND1GND2GNDGNDunclamped+1kVESDvoltagewaveform(IEC1000-4-2network)clamped+1kVESDvoltagewaveform(IEC1000-4-2network)unclamped-1kVESDvoltagewaveform(IEC1000-4-2network)clamped-1kVESDvoltagewaveform(IEC1000-4-2network)verticalscale=5V/divhorizontalscale=50ns/divverticalscale=200V/divhorizontalscale=50ns/divverticalscale=200V/divhorizontalscale=50ns/divverticalscale=5V/divhorizontalscale=50ns/divPESD5V0L4UWPESD3V3L4UW12354Fig.6ESDclampingtestset-upandwaveforms.2004Apr067PhilipsSemiconductorsProductspecificationLowcapacitancequadrupleESDprotectionarrayPESDxL4UWseriesPACKAGEOUTLINEUNITbpcDEe1HELpwREFERENCESOUTLINEVERSIONEUROPEANPROJECTIONISSUEDATE01-01-0401-08-27IECJEDECEIAJmm0.270.170.180.081.71.51.31.10.5e1.01.71.50.1y0.1DIMENSIONS(mmaretheoriginaldimensions)0.30.1SOT665bpDe1eALpdetailXHEEwMAAS012mmscaleA0.60.5cX12345Plasticsurfacemountedpackage;5